Crystalline structure of germanium films on silicon substrates

Datsenko, L. I.; Gureev, A. N.; Korotkevich, N.F.; Soldatenko, N.N.; Tkhorik, Yu. A.

doi:10.1016/0040-6090(71)90030-7

Cited by 16 publications

(1 citation statement)

References 10 publications

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“…In conclusion we would note that the L800 values for the indicated interval of dislocation density, Nd, are in satisfactory agreement with those known for various reflections [2,5,[19][20][21][22]. Taking into account the above-mentioned results one can conclude that the new approach proposed by us is promising for a rapid preliminary stucture diagnostics of bulk GaAs crystals.…”

Section: Discussionsupporting

confidence: 71%

Rapid Structure Perfection Diagnostics of GaAs Single Crystal by Diffraction of White X-Ray Radiation

Khrupa¹,

Grigoryev²,

Skorokhod³

et al. 1994

Acta Phys. Pol. A

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Sensitivity of X-ray integral reflectivity of GaAs single crystal to a degree of structure distortions was established to grow considerably in the Bragg diffraction case when tle characteristic Ag Κ, 1 line is changed for more hard white radiation. In effect, the absorption length essentially exceeds the extinction length what results in enlancement of incoherent scattering.Measurements of X-ray integral reflectivity coordinate dependence b y single crystal spectrometer permitted to determine the mean level of crystal 1attice distortion as well as the degree of structure homogeneity of a sample with dislocations. The Debye-Waller static factor value vas estimated from X-ray integrał reflectivity magnitudes for the 800 reflection of white radiation.

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Section: Discussionsupporting

confidence: 71%