An investigation was made of the effect of dislocations on the intensity jumps i2/& near the K-edge of the absorption of atoms by interference transmission of X-rays in Ge. The intensities i2 and il were measured using a single-crystal spectrometer in the case of h u e diffraction from the planes ( l l l ) , (110), and (loo), respectively, in the long-and short-wave regions near the K-edge of Ge. An increase of i2 and a decrease of i, with increasing dislocation density Nd is observed in the crystal. A linear dependence is found for the logarithm of the intensity jump versus crystal thickness t. It is shown that the slope of the straight line In (iz/il) = f ( t ) rises with the increase of Nd for 220 and 400 reflections. For the 111 reflection such an effect of dislocations was not observed up to ivd = 7 x lo' cm-2. M3yYaJIOCb BJIHHHHe AHCJIOKaUHt Ha CKaYKH MHTeHCHBHOCTH &/il y K-KpanIlOrJIOI4eHMJI aTOMOB IIpH HHTeP@ePeHqHOHHOM lIpOXO?XneHHH PeHTreHOBCKHX JIy-9efi B Ge. MHTeHCHBHOCTH H il H3MePJIJIHCb H a OnHOKPHCTaJIbHOM CIleKTpOMeTpe B CJIyYae Jhy3-AII@paKqMH OT IIJIOCKOCTeP ( I l l ) , (110), (100) COOTBeTCTBeHHO B AJIHHHOBOJIHOBOB M KO~OTKOBOJIHOBOB 06JIac~Rx ~6~11x311 K-pan Ge. l I o~a 3 a~o YCTaHOBJIeHa JIHHehOCTb 3aBHCMMOCTH JIOrapH@Ma CKaYHa kIHTeHCHBHOCTH KaK ysenaseme i2 H yMeHbnreme i, npHpocTe IIJIOTHOCTH micnoKaqHB Nd B Kp~cTame. @YHKUHH TOJIIIIHHH KpHcTanna t . lIo~aaaao, PTO HaKaoH ~~H M O B In (i2/i1) = f ( t ) yBenmmaeTcn c POCTOM Nd X J I~ pe@neKcoB 220 H 400. Ann pe@neKca 111 He 06HapymeHO TaKoro BJIH~HHJI nHcnoKaqMti no N d = 7 x 104 cm-2.

Sensitivity of X-ray integral reflectivity of GaAs single crystal to a degree of structure distortions was established to grow considerably in the Bragg diffraction case when tle characteristic Ag Κ, 1 line is changed for more hard white radiation. In effect, the absorption length essentially exceeds the extinction length what results in enlancement of incoherent scattering.Measurements of X-ray integral reflectivity coordinate dependence b y single crystal spectrometer permitted to determine the mean level of crystal 1attice distortion as well as the degree of structure homogeneity of a sample with dislocations. The Debye-Waller static factor value vas estimated from X-ray integrał reflectivity magnitudes for the 800 reflection of white radiation.

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Silicon crystals contained copper atoms included by diffusion way during high temperature treatment have been investigated by means of X-ray transmission topography (Lang method). The studies allow us to observe the increase or decrease iai the dislocation images widths in dependence on the time of diffusin annealing. In one case, during the more prolonged decoration process a build-up of decorating particles on dislocation occurs with widening of the topographic images of this dislocation. Ιn another case (short time of decorating process) some compensation of defect deformation frelds has been noticed (shortening of tle mentioned images takes part). The obtained effects depend not only on the type of intrinsic impurities which take part in forming the Cottrell atmospheres but also on the duration of diffusion annealing. Tle observed results of interaction of dislocations with impurities have been confirmed by the studies of the integral reflectivity of decorated samples by means of the double-crystal spectrometer.