X-Ray Investigations of Dislocations in an Implanted Si Crystal Induced by Pulsed Laser Annealing

Auleytner, J.; Skorokhod, M. Ya.; Datsenko, L. I.; Khrupa, V. I.; Briginets, A.

doi:10.1002/pssa.2211470237

Cited by 2 publications

(2 citation statements)

References 2 publications

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“…It was stated that exceeding of an optimal value of the power density, extended defects, e.g. dislocations, were created in the implanted crystal [6]. Our investigation concerns dislocation-free Czochralski-grown silicon single crystals irradiated with different ions of dose causing amorphization of the near-surface layer.…”

Section: Introductionmentioning

confidence: 99%

Study of Extended Defect Structure Induced by Pulsed Laser Annealing in Implanted Silicon Crystals

Klinger

Lefeld‐Sosnowska

Żymierska³

et al. 1999

phys. stat. sol. (a)

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Section: Introductionmentioning

confidence: 99%

Study of Extended Defect Structure Induced by Pulsed Laser Annealing in Implanted Silicon Crystals

Klinger

Lefeld‐Sosnowska

Żymierska³

et al. 1999

phys. stat. sol. (a)

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“…This phenomenon alters many strength, electrical, structural and other properties of the crystals. For example, it is known from experiments that diffusion copper into a crystal widens X-ray diffraction images of dislocations [1][2][3]. The interaction of dislocations with intrinsic point defects as well as with atoms of dopant or with impurities diffusing (541) during heat treatments can also influence the integral reflectivity, Ri , of the crystals apparently due to changes in values of the coherent and diffuse components of the scattering caused by variations of deformation fields of dislocations.…”

Section: Introductionmentioning

confidence: 99%

Influence of Dislocation Interactions with Impurities on their Topographical Images in Silicon Crystals

et al. 1996

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Silicon crystals contained copper atoms included by diffusion way during high temperature treatment have been investigated by means of X-ray transmission topography (Lang method). The studies allow us to observe the increase or decrease iai the dislocation images widths in dependence on the time of diffusin annealing. In one case, during the more prolonged decoration process a build-up of decorating particles on dislocation occurs with widening of the topographic images of this dislocation. Ιn another case (short time of decorating process) some compensation of defect deformation frelds has been noticed (shortening of tle mentioned images takes part). The obtained effects depend not only on the type of intrinsic impurities which take part in forming the Cottrell atmospheres but also on the duration of diffusion annealing. Tle observed results of interaction of dislocations with impurities have been confirmed by the studies of the integral reflectivity of decorated samples by means of the double-crystal spectrometer.

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X-Ray Investigations of Dislocations in an Implanted Si Crystal Induced by Pulsed Laser Annealing

Cited by 2 publications

References 2 publications

Study of Extended Defect Structure Induced by Pulsed Laser Annealing in Implanted Silicon Crystals

Study of Extended Defect Structure Induced by Pulsed Laser Annealing in Implanted Silicon Crystals

Influence of Dislocation Interactions with Impurities on their Topographical Images in Silicon Crystals

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