Crystalline-to-amorphous transition in chemical vapor deposition of pseudomorphic Si1−x−yGexCy films

Laursen, Thomas; Chandrasekhar, D.; Smith, David J.; Mayer, J. W.; Huffman, James E.; Westhoff, R.; Robinson, McD.

doi:10.1063/1.120001

Cited by 9 publications

(8 citation statements)

References 5 publications

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“…The epitaxial growth was done by the Lawrence Semiconductor Research Laboratory. 11 The epitaxial wafer was divided into several pieces, and each piece was heated at a temperature from 850 to 1100°C for 1 h in a nitrogen atmosphere.…”

Section: Methodsmentioning

confidence: 99%

Thermal stability of the strained-Si/Si0.7Ge0.3 heterostructure

Sugii

2001

Journal of Applied Physics

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Thermal stability of the strained-Si/Si 0.7 Ge 0.3 heterostructure was investigated by secondary-ion mass spectroscopy, Raman spectroscopy, and atomic force microscopy. Ge atoms diffused out through the strained-Si layer during heat treatment of 1000°C for 1 h. The activation energy of Ge diffusion in strained Si was 3.3 eV, which was lower than the value in unstrained Si ͑4.7-5.3 eV͒. Strain in the strained-Si layer did not change after thermal treatment at 950°C or less for 1 h. Slip lines due to strain relaxation formed at the surface of the strained-Si layer for the samples treated at 950-1000°C for 1 h. For practical application of the strained-Si/Si 0.7 Ge 0.3 heterostructure to electron devices, the maximum thermal budget should be made less than that equivalent to 900°C annealing for 1 h.

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Section: Methodsmentioning

confidence: 99%

Thermal stability of the strained-Si/Si0.7Ge0.3 heterostructure

Sugii

2001

Journal of Applied Physics

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“…Recently, CVD processes using hydrocarbons with multiple C-H bonds, such as C 2 H 2 and C 2 H 6 , as the source of C led to the development of device-quality material with 2 atom % C incorporation. 41 The addition of C was shown to have a marked effect on the structural quality of the material. Whereas defects such as misfit dislocations were usually observed at the SiGe/Si interface due to lattice mismatch, the new SiGeC films grown at 700 °C had very few interfacial defects, as shown in Figure 13.…”

Section: Group IV Semiconductor Alloysmentioning

confidence: 99%

Synthesis and Atomic and Electronic Structure of New Si−Ge−C Alloys and Compounds

1998

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The synthesis and characterization of completely novel binary and ternary alloy semiconductors and ordered phases based on C, Si, and Ge are discussed in this review. Metastable compound semiconductors with ordered structures, which include stoichiometric SiGe, Si 4 C, Si 3 GeC 4 (sphalerite), Ge 4 C, (Si 2 Ge)C x , and (Ge 2 Si)C x (x ) 5%), are described. Materials systems include diamond-structured silicon-germanium solid solutions with dissolved carbon (Si 1-x-y Ge x C y ), monocrystalline Ge 1-x C x hybrids of Ge, and C-diamond and related Si-containing random alloy systems. The Si 4 C and Ge 4 C materials incorporate the corresponding tetrahedra that are linked together to form a diamond-cubic structure related to Si. The Si 3 GeC 4 phase is related to sphalerite and (Si 2 Ge)C x has a new P3 hm1 structure formed by Ge-Si-Si ordering along the diamond 〈111〉 direction. These compounds offer the prospect of band gaps wider than that of Si; in some cases, the band gaps are expected to become direct. This report emphasizes an approach that combines novel precursor chemistries and modern deposition techniques (ultrahigh-vacuum chemical-vapor deposition) to develop heteroepitaxial, device-quality inorganic materials. Important highlights of recent research based on conventional deposition methods are also summarized.

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“…Atmospheric pressure chemical vapor deposition, with precursors of S1H2CI2, GeH4 and C2H4, was used to grow pseudomorphic SiGeC films on (100)Si substrates. 3 Films with C concentrations of up to 2.5%, as measured by ion-beam analysis, were entirely pseudomorphic and no defects were observed using cross-sectional TEM (Fig. 1).…”

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confidence: 94%

“…Robinson 2 , E.T. Croke 3 and A.T. Hunter 3 >Center for Solid State Science, Arizona State University, Tempe AZ 85287-1704. 2 Lawrence Semiconductor Research Laboratory, 2300 W. Huntington, Tempe AZ 85282.…”

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Microstructural Characterization of Heteroepitaxial SiGeC Alloys

et al. 1998

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Heteroepitaxial growth of Group IV elements on Si is attracting increased attention because of the possibility of strain compensation in addition to bandgap engineering. The incorporation of the smaller C atom into Si1-xGex binary alloys to compensate for the larger size of the Ge atom offers the prospect of lattice matching and hence strain-free growth. In our early work, ternary SiGeC alloy films with up to ∽ 2% C were epitaxial with excellent crystallinity and very few interfacial defects. However, with increased C content, the films developed considerable disorder away from the substrate and finally became amorphous. Moreover, even at low C contents (∽2-3%), it appears that substantial C is being incorporated interstitially rather than substitutionally into the covalent lattice.2 Our recent work has therefore been aimed at establishing growth conditions that enable the amount of substitutional C to be maximized while still maintaining high crystal quality.

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Crystalline-to-amorphous transition in chemical vapor deposition of pseudomorphic Si1−x−yGexCy films

Cited by 9 publications

References 5 publications

Thermal stability of the strained-Si/Si0.7Ge0.3 heterostructure

Thermal stability of the strained-Si/Si0.7Ge0.3 heterostructure

Synthesis and Atomic and Electronic Structure of New Si−Ge−C Alloys and Compounds

Microstructural Characterization of Heteroepitaxial SiGeC Alloys

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