Crystallization and activation of silicon by microwave rapid annealing

Kimura, Shunsuke; Ota, Kosuke; Hasumi, Masahiko; Suzuki, Ayuta; Ushijima, Mitsuru; Sameshima, Toshiyuki

doi:10.1007/s00339-016-0220-7

Cited by 6 publications

(8 citation statements)

References 27 publications

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“…The average electric field intensity gradually increased as the electrical conductivity further increased. The calculation supports experimental results of low microwave refection and effective heating of the CHT [11,12]. Figure 4 shows temperature changes with time of the CHT for three setting temperatures of 1000, 1100, and 1200 o C under moving the silicon samples at 0.12 mm/s just below the CHT.…”

Section: -3 Solar Cell Fabricationsupporting

confidence: 80%

“…Conductive carbon is effectively heated via free carrier absorption of the electromagnetic energy with excellent thermal properties of low specific heat and high heat proof [12][13][14]. We have found that the low packing density of carbon powders about 0.09 allows effective absorption of microwave [12].…”

Section: Introductionmentioning

confidence: 94%

“…For fabricating CHTs, quartz tubes with 60-mm long and 4-mm inter diameter and 6-mm outer diameter were prepared. 2-m-diameter-carbon powders with a 0.1-g weight were put in the quartz tubes, in which the packing density was controlled as 0.09 with an electrical conductivity of 55 S/m, which was determined by the previous work as the best value for heating [12]. Ar inert gas was filled in the quartz tube at 1400 Pa.…”

Section: Experimental 2-1 Cht Heating Systemmentioning

confidence: 99%

“…We have recently developed a lamp of carbon heating tube (CHT), in which 2-m-diameter-carbon powders were filled with inert gas in a quartz tube whose edges were then closed by thermal welding [11]. Conductive carbon is effectively heated via free carrier absorption of the electromagnetic energy with excellent thermal properties of low specific heat and high heat proof [12][13][14]. We have found that the low packing density of carbon powders about 0.09 allows effective absorption of microwave [12].…”

Section: Introductionmentioning

confidence: 99%

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Microwave Rapid Heating System Using Carbon Heating Tube

Sameshima

Kikuchi

Uehara

et al. 2019

Proceedings 17th International Conference on Microwave and High Frequency Heating

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We report a microwave heating system with a carbon heating tube (CHT) made by a 4-mm diameter quartz tube filled carbon particles and Ar gas at 1400 Pa. 2.45-GHz microwave at 200 W was introduced to a 300-dimameter metal cavity, in which 60-mm-long CHT was set at the central position. The numerical simulation with a finite element moment method resulted in the standing wave of the electric field caused by three dimensional Fresnel interference effect with low high electric field intensity ranging from from 1 to 6 kV/m because of effective absorption of microwave power by the CHT. The lowest average electrical field intensity of 5 kV/m in the cavity space was given by the electrical conductivity of carbon ranging from 10 to 55 S/m. The CHT with 55 S/m heated to 1200oC by microwave irradiation at 200 W. This heating method was applied to activate 1.0x1015-cm-2 boron and phosphorus implanted regions in n-type crystalline silicon substrate to fabricate pn junction and solar cells. The CHT heating at 1200oC realized decrease in the sheet resistivity to 146 Ω/sq, decrease in the density of defect states to 1.3x1011 and 9.2x1010 cm-2 for boron (p+) and phosphorus (n+) implanted surfaces, and solar cell characteristic with a conversion efficiency of 15% under illumination of air mass 1.5 at 0.1 W/cm2.

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Section: -3 Solar Cell Fabricationsupporting

confidence: 80%

Section: Introductionmentioning

confidence: 94%

Section: Experimental 2-1 Cht Heating Systemmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Microwave Rapid Heating System Using Carbon Heating Tube

Sameshima

Kikuchi

Uehara

et al. 2019

Proceedings 17th International Conference on Microwave and High Frequency Heating

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“…Many heating technologies have been developed such as laser annealing, plasma jet annealing, and rapid thermal annealing [9]- [15]. We have recently proposed a combination of the carbon powder absorber with 2.45 GHz microwave irradiation as a simple rapid thermal annealing method [16], [17]. Conductive carbon is effectively heated via free carrier absorption of the electromagnetic energy with excellent thermal properties of low specific heat and high heat proof [18], [19].…”

Section: Introductionmentioning

confidence: 99%

Carbon Heating Tube Used for Rapid Heating System

Sameshima

Miyazaki²,

Kobayashi³

et al. 2019

IEEE Access

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We report a microwave heating system with a carbon heating tube (CHT) which was made by a 4-mm diameter quartz tube filled with carbon particles and Ar gas at 1400 Pa. A 60-mm-long CHT was set in a cavity in which 2.45-GHz microwave was introduced. Via nearly complete absorption of a microwave power of 200 W by carbon in the CHT during multi-reflection of the microwave in the cavity, the CHT was effectively heated to 1279 • C at 33 s after the microwave initiation, which was observed by the radiationtype thermometer. Moreover, the control of the CHT temperature was demonstrated with a home-made proportional-integral-differential feedback circuit which regulated the magnetron power source using a signal of the thermometer. The control of temperature at 1100 • C was successfully realized. Crystallization of a 58-nm-thick amorphous silicon thin film formed on the glass substrate was demonstrated by mechanically moving the silicon sample just below the heated CHT. A high crystalline volume ratio of 0.92 was achieved. Furthermore, heating of 500-µm-thick-n-type silicon substrate implanted with 1.0 × 10 15 cm −2 phosphorus and boron atoms with the CHT resulted in activation of the doped regions. Rectified diode characteristics were achieved. INDEX TERMS Electromagnetic interference, heat treatment, low-microwave power electronics, PID temperature control, silicon.

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Microwave annealing of silicon solar cells

Veettil

Zhang

Payne

et al. 2023

Applied Physics Letters

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The microwave annealing of semiconductor devices has not been extensively researched and is rarely utilized in industry, yet it has the potential to significantly reduce the time and cost associated with large-volume semiconductor processing, such as the various heating and annealing processes required in the manufacture of photovoltaic modules. In this paper, we describe microwave annealing of silicon solar cells, the effective passivation of light-induced defects, and a reduction in light-induced degradation. We find that silicon solar cells are heated rapidly in a microwave field and that effective B–O defect passivation can be achieved by microwave processing in less than 2 s. Microwave annealing yields similar results as compared to rapid thermal annealing.

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Crystallization and activation of silicon by microwave rapid annealing

Cited by 6 publications

References 27 publications

Microwave Rapid Heating System Using Carbon Heating Tube

Microwave Rapid Heating System Using Carbon Heating Tube

Carbon Heating Tube Used for Rapid Heating System

Microwave annealing of silicon solar cells

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