Crystallization and bandgap variation of non-stoichiometric amorphous Ga2O3-x thin films during post-annealing process

Band offsets of ITO/amorphous GaO x heterojunction determined by x-ray photoemission spectra

“…From the fitting results, we can see that the E a-GaOx g value slightly increased from 5.2 ± 0.01 to 5.32 ± 0.01 eV with the increasement of oxygen flux, and the higher E a-GaOx g values measured for the a-GaO x films may be due to the amorphous nature of the films and the fewer oxygen vacancies. In other words, the excess oxygen introduced during the fabrication fills the defects and reduces the disorder of the amorphous film, resulting in a reduction in the donor levels below the conduction band minimum, which allows the bandgap to increase [23,27,28]. Meanwhile, the bandgap of ITO, E ITO g , was fitted as 3.96 ± 0.005 eV, which is similar to the reported value [29].…”

Characteristics of tunable aluminum-doped Ga2O3 thin films and photodetectors

“…The Ga 2 O 3 bandgap calculated in figure 5(a) is 4.65 eV, which is consistent with the band gap value range (4.5-4.8 eV) of different growth methods in the existing research [46]. The main reason for the low band gap value is that Ga 2 O 3 grown by ALD is generally amorphous film verified by XRD [47]. According to figure 5(d), the bandgap and the doping ratio have a linear connection.…”

Ferroelectric enhanced Ga2O3/BFMO-based deep ultraviolet photovoltaic detectors with dual electric fields for photogenerated carrier separation

“…These results are consistent with values previously reported in the literature. 25,26 The ferroelectric properties of the BFMO thin film were further investigated using a ferroelectric tester at a frequency of 1000 Hz. The BFMO thin film shows a typical ferroelectric P – E loop with a remanent polarization of 55.5 μC cm −2 , indicating the excellent ferroelectricity of the BFMO thin film (Fig.…”