No abstract

No abstract

No abstract

No abstract

Articles you may be interested inGrowth of single crystalline GaN thin films on Si(111) substrates by high vacuum metalorganic chemical vapor deposition using a single molecular precursor Deposition of silicon carbide films using a high vacuum metalorganic chemical vapor deposition method with a single source precursor: Study of their structural properties Growth of cubic SiC thin films on Si(001) by high vacuum chemical vapor deposition using 1,3-disilabutane and an investigation of the effect of deposition pressure Growth and characterization of ultrahigh vacuum/chemical vapor deposition SiGe epitaxial layers on bulk singlecrystal SiGe and Si substrates Heteroepitaxial cubic SiC thin films have been deposited on silicon substrates at temperatures in the range of 750-1000°C using single molecular precursors by the metalorganic chemical vapor deposition ͑CVD͒ method. Single-crystalline, crack-free, stoichiometric cubic SiC films were successfully grown on both Si͑001͒ and Si͑111͒ substrates without surface carbonization at as low as temperature of 920°C with 1,3-disilabutane, H 3 Si-CH 2 -SiH 2 -CH 3 , as a liquid single source precursor which contains silicon and carbon in 1:1 ratio. Cubic SiC thin films highly oriented in the ͓001͔ direction were also obtained on Si͑001͒ using either a liquid mixture of 1,3,5-trisilapentane ͑TSP͒, H 3 Si-CH 2 -SiH 2 -CH 2 -SiH 3 , and 2,4,6-trisilaheptane ͑TSH͒ at 980°C or 2,6-dimethyl-2,4,6-trisilaheptane ͑DMTSH͒, H 3 C-SiH(CH 3 ) -CH 2 -SiH 2 -CH 2 -SiH(CH 3 ) -CH 3 at 950°C without carrier gas. These growth temperatures were much lower than conventional CVD growth temperatures, and this is a report of cubic SiC film growth using the single molecular precursors of trisilaalkanes ͑i.e., DMTSH and TSPϩTSH͒. The as-grown SiC films were characterized by in situ reflection high-energy electron diffraction and by ex situ x-ray diffraction, transmission electron diffraction, scanning electron microscopy, Auger electron spectroscopy, and Rutherford backscattering spectroscopy