Epitaxial growth of cubic SiC thin films on silicon using single molecular precursors by metalorganic chemical vapor deposition

Abstract

Articles you may be interested inGrowth of single crystalline GaN thin films on Si(111) substrates by high vacuum metalorganic chemical vapor deposition using a single molecular precursor Deposition of silicon carbide films using a high vacuum metalorganic chemical vapor deposition method with a single source precursor: Study of their structural properties Growth of cubic SiC thin films on Si(001) by high vacuum chemical vapor deposition using 1,3-disilabutane and an investigation of the effect of deposition pressure Growth and characterization of ultrahigh vacuum/chemical vapor deposition SiGe epitaxial layers on bulk singlecrystal SiGe and Si substrates Heteroepitaxial cubic SiC thin films have been deposited on silicon substrates at temperatures in the range of 750-1000°C using single molecular precursors by the metalorganic chemical vapor deposition ͑CVD͒ method. Single-crystalline, crack-free, stoichiometric cubic SiC films were successfully grown on both Si͑001͒ and Si͑111͒ substrates without surface carbonization at as low as temperature of 920°C with 1,3-disilabutane, H 3 Si-CH 2 -SiH 2 -CH 3 , as a liquid single source precursor which contains silicon and carbon in 1:1 ratio. Cubic SiC thin films highly oriented in the ͓001͔ direction were also obtained on Si͑001͒ using either a liquid mixture of 1,3,5-trisilapentane ͑TSP͒, H 3 Si-CH 2 -SiH 2 -CH 2 -SiH 3 , and 2,4,6-trisilaheptane ͑TSH͒ at 980°C or 2,6-dimethyl-2,4,6-trisilaheptane ͑DMTSH͒, H 3 C-SiH(CH 3 ) -CH 2 -SiH 2 -CH 2 -SiH(CH 3 ) -CH 3 at 950°C without carrier gas. These growth temperatures were much lower than conventional CVD growth temperatures, and this is a report of cubic SiC film growth using the single molecular precursors of trisilaalkanes ͑i.e., DMTSH and TSPϩTSH͒. The as-grown SiC films were characterized by in situ reflection high-energy electron diffraction and by ex situ x-ray diffraction, transmission electron diffraction, scanning electron microscopy, Auger electron spectroscopy, and Rutherford backscattering spectroscopy

High‐Speed Epitaxial Growth of β‐SiC Film on Si(111) Single Crystal by Laser Chemical Vapor Deposition

“…Figure shows the relationship between deposition rate of epitaxial SiC film and deposition temperature. (111)‐ and (100)‐oriented epitaxial β‐SiC films were obtained using thermal CVD at 1600 K with a deposition rate less than 3 μm/h. (111)‐ and (100)‐oriented epitaxial β‐SiC films had been fabricated at 1600 K with a deposition rate from 1 to 3 μm/h using HWCVD.…”

“…In spite of a large mismatch (20%) in lattice constant and thermal expansion coefficients (~8%) between SiC and Si, β‐SiC film has been epitaxially grown on Si substrate using thermal chemical vapor deposition (TCVD), hot wire chemical vapor deposition (HWCVD), low pressure chemical vapor deposition (LPCVD), and physical techniques, such as magnetron sputtering, and molecular beam epitaxy (MBE) has been achieved.…”