High‐Speed Epitaxial Growth of β‐<scp><scp>SiC</scp></scp> Film on <scp><scp>Si</scp></scp>(111) Single Crystal by Laser Chemical Vapor Deposition

Zhang, Song; Tu, Rong; Goto, Takashi

doi:10.1111/j.1551-2916.2012.05354.x

Cited by 42 publications

(26 citation statements)

References 21 publications

(37 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The laser beam diameter was expanded to 15 mm to irradiate the entire substrate area. The temperature distribution in the substrate was within several K [18]. The AlN substrate (10 Â 10 Â 1 mm 3 ) was placed on a hot stage and preheated at 873 K (T pre ).…”

Section: Methodsmentioning

confidence: 99%

Preparation of Na–Al–O films by laser chemical vapor deposition

Chen

Katsui

Goto

2015

Materials Chemistry and Physics

Self Cite

View full text Add to dashboard Cite

h i g h l i g h t s NaAlO 2 and NaAl 6 O 9.5 films were fabricated by laser chemical vapor deposition.(110)-oriented g-NaAlO 2 films having roof-like faceted morphology were grown.Pyramidally and polygonally faceted NaAl 6 O 9.5 films formed with (041)-orientation formed.High deposition rates for single-phase g-NaAlO 2 films were over 100 mm h À1 . a b s t r a c tNaeAleO films were prepared on AlN substrates by laser chemical vapor deposition at deposition temperatures (T dep ) of 940e1250 K, molar ratios of Na to Al precursors (R Na/Al ) of 0.2e3 and total pressures (P tot ) of 100e800 Pa. Single-phase NaAlO 2 films were deposited at T dep ¼ 940e1080 K, R Na/ Al ¼ 1.5e3 and P tot ¼ 100e800 Pa. The (110)-oriented g-NaAlO 2 films showed roof-like grains, whereas the (200)-oriented g-NaAlO 2 films had finely faceted grains. Single-phase NaAl 6 O 9.5 formed at T dep ¼ 1018e1125 K, R Na/Al ¼ 0.4e3.0 and P tot ¼ 100e600 Pa NaAl 6 O 9.5 films had (041) orientation with pyramidally and polygonally faceted grains. At T dep > 1100 K, a-Al 2 O 3 films, consisting of polygonally faceted grains, formed. The highest deposition rate was 131 mm h À1 for the g-NaAlO 2 film at T dep ¼ 986 K, R Na/Al ¼ 3.0 and P tot ¼ 200 Pa.

show abstract

Section: Methodsmentioning

confidence: 99%

Preparation of Na–Al–O films by laser chemical vapor deposition

Chen

Katsui

Goto

2015

Materials Chemistry and Physics

Self Cite

View full text Add to dashboard Cite

show abstract

“…[14][15][16][17][18][19][20][21] However, the mismatches of lattice parameters and thermal expansion coefficients may cause defects and strain at the interface of 3C-SiC (111) and Si (111). [14][15][16][17][18][19][20][21] However, the mismatches of lattice parameters and thermal expansion coefficients may cause defects and strain at the interface of 3C-SiC (111) and Si (111).…”

Section: Introductionmentioning

confidence: 99%

High‐speed heteroepitaxial growth of 3C‐SiC (111) thick films on Si (110) by laser chemical vapor deposition

Sun

Zhu

et al. 2017

J Am Ceram Soc

Self Cite

View full text Add to dashboard Cite

3C‐SiC (111) thick films were grown on Si (110) substrate via laser chemical vapor deposition (laser CVD) using hexamethyldisilane (HMDS) as precursor and argon (Ar) as dilution gas. The 3C‐SiC (111) polycrystalline films were prepared at deposition temperature (Tdep) of 1423‐1523 K, whereas the 3C‐SiC (111) epitaxial films were obtained at 1573‐1648 K with the thickness of 5.40 to 9.32 μm. The in‐plane relationship was 3C‐SiC [‐1‐12]//Si [001] and 3C‐SiC [‐110]//Si [‐110]. The deposition rates (Rdep) were 16.2‐28.0 μm/h, which are 2 to 100 times higher than that of 3C‐SiC (111) epi‐grown on Si (111) by conventional CVD. The growth mechanism of 3C‐SiC (111) epitaxial films has also been proposed.

show abstract

“…The cubic polytype of SiC (β‐SiC) has an extreme range of thermal, chemical, and electronic properties that make it an attractive material for high‐ and medium‐power semiconductor devices. Recently, most research was focused on <111>‐ and <100>‐oriented β‐SiC . Large‐diameter <111>‐ and <100>‐oriented β‐SiC wafers were successfully prepared .…”

Section: Introductionmentioning

confidence: 99%

“…Recently, most research was focused on <111>and <100>-oriented b-SiC. [1][2][3][4][5][6][7][8] Large-diameter <111>and <100>-oriented b-SiC wafers were successfully prepared. 4,9 Theoretically, SiC properties change with preferred orientation.…”

Section: Introductionmentioning

confidence: 99%

Ultra‐Fast Fabrication of <110>‐Oriented β‐SiC Wafers by Halide CVD

Zheng

Sun

et al. 2015

J. Am. Ceram. Soc.

Self Cite

View full text Add to dashboard Cite

Φ80 mm‐diameter, highly <110>‐oriented β‐SiC wafers were ultra‐fast fabricated via halide chemical vapor deposition (CVD) using tetrachlorosilane (SiCl4) and methane (CH4) as precursors. The effects of deposition temperature (Tdep) and total pressure (Ptot) on the orientations, microstructures, and deposition rate (Rdep) were investigated. Rdep dramatically increased with increasing Tdep where maximum Rdep was 930 μm/h at Tdep = 1823 K and Ptot = 4 kPa, leading to a maximum of 1.9 mm in thickness in 2 h deposition. The <110>‐oriented β‐SiC was obtained at Tdep > 1773 K and Ptot = 1–4 kPa. Growth mechanism of <110>‐oriented β‐SiC has also been discussed under consideration of crystallographic planes, surface energy, and surface morphology.

show abstract

High‐Speed Epitaxial Growth of β‐SiC Film on Si(111) Single Crystal by Laser Chemical Vapor Deposition

Cited by 42 publications

References 21 publications

Preparation of Na–Al–O films by laser chemical vapor deposition

Preparation of Na–Al–O films by laser chemical vapor deposition

High‐speed heteroepitaxial growth of 3C‐SiC (111) thick films on Si (110) by laser chemical vapor deposition

Ultra‐Fast Fabrication of <110>‐Oriented β‐SiC Wafers by Halide CVD

Contact Info

Product

Resources

About