Crystallization and electrical resistivity of Cu2O and CuO obtained by thermal oxidation of Cu thin films on SiO2/Si substrates

Valladares, L. De Los Santos; Salinas, Daniel Hurtado; Bustamante, Ángel; Najarro, D. Acosta; Khondaker, Saiful I.; Mitrelias, T.; Barnes, C. H. W.; Aguiar, J. Albino; Majima, Yutaka

doi:10.1016/j.tsf.2012.06.043

Cited by 276 publications

(94 citation statements)

References 44 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The resistivity of the films annealed at 200 o C is decreased from 4.714 ×10 3 Ω.cm to 1.261×10 3 Ω.cm for the increase in annealing temperature to 300 o C. This maybe due to the excess oxygen content in the copper oxide. Drobny and Pulfrey reported that during the transition from Cu2O to CuO, the CuO sites will act as electrically neutral defects which replace the electrically active copper vacancies thus resulting in the decrease of the resistivity [10]. The resistivity is then decreased slightly to 0.2835×10 3 Ω.cm with increasing annealing temperature at 450 o C which consists of tenorite phase.…”

Section: Electrical Propertiesmentioning

confidence: 99%

Effect of annealing temperature on the properties of copper oxide films prepared by dip coating technique

Raship¹,

Sahdan²,

Adriyanto³

et al. 2017

AIP Conference Proceedings

View full text Add to dashboard Cite

Section: Electrical Propertiesmentioning

confidence: 99%

Effect of annealing temperature on the properties of copper oxide films prepared by dip coating technique

Raship¹,

Sahdan²,

Adriyanto³

et al. 2017

AIP Conference Proceedings

View full text Add to dashboard Cite

“…20,21 Furthermore, we have recently shown that the appearance of a ferromagnetic moment on nominally antiferromagnetic NiO nanoparticles can be attributed to a disordered shell (surface) possessing a significant polarizable magnetization. [31][32][33] This consists in annealing metal surfaces at high temperatures in air flow or in oxygen atmosphere to obtain the partial (or complete, as desired) oxidation of the metal films. 30 However, in most of these techniques, it is difficult to control the amount of oxidation.…”

Section: Introductionmentioning

confidence: 99%

Characterization of Ni thin films following thermal oxidation in air

Valladares

Ionescu

Holmes

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

View full text Add to dashboard Cite

The authors study the thermal oxidation of nickel thin films (50 nm) fabricated by conventional thermal evaporation, resulting from annealing in air at 300, 325, 350, 400, and 700 C. The characterization is performed by x-ray diffraction, Raman spectroscopy, superconducting quantum interference device magnetometry, and scanning electron microscopy. These techniques show that the oxidation increases with annealing temperature. The formation of granular films of coexisting Ni and NiO is confirmed after annealing at 400 C. The magnetic measurements indicate coexisting ferromagnetism and antiferromagnetism, corresponding to Ni and NiO contributions. The magnetic hysteresis loops reveal exchange bias in the samples annealed at 235, 350, and 400 C due to the competition between the exchange interactions at the Ni/NiO interfaces.

show abstract

“…While the use of CO as ac apping agent is indeed crucial for achieving quality dispersion of formed PtCu NPs using GD reaction of Cu/C with K 2 PtCl 4 in aqueous media, the mechanism behind double passivation method is much more complex:First, the first passivation involves the passivation of Cu by spontaneous growth of the oxides (Scheme 1a;see also XRD spectra in the Supporting Information, Figure S10). A passive oxide layer lowers the conductance [22] between the water phase and Cu. Second, upon introduction of K 2 PtCl 4 , GD reaction between Pt precursor and oxide-passivated Cu is initiated.…”

mentioning

confidence: 99%

A Double‐Passivation Water‐Based Galvanic Displacement Method for Reproducible Gram‐Scale Production of High‐Performance Platinum‐Alloy Electrocatalysts

et al. 2019

View full text Add to dashboard Cite

Preparation of large quantities of high-performance supported Pt-alloy electrocatalysts is crucial for the faster development and implementation of low-temperature proton exchange membrane fuel cells (PEMFCs). One of the prospective nanofabrication synthesis methods is based on the galvanic displacement (GD) reaction. Af acile,h ighly reproducible,g ram scale,w ater-based double passivation GD method is now presented for the synthesis of carbon-supported Pt-M nanoparticles (M = Cu, Ni, Co). It offers great flexibility over the catalyst design, such as the choice of the sacrificial metal (M), variation of the chemical composition of alloy, variation of total metal loading (Pt + M) on carbon support, or even variation of the carbon support itself.T he obtained Ptalloyc atalysts are several times more active compared to aP t reference and exhibits better stability during accelerated degradation tests performed at 60 8 8C.

show abstract

Crystallization and electrical resistivity of Cu2O and CuO obtained by thermal oxidation of Cu thin films on SiO2/Si substrates

Cited by 276 publications

References 44 publications

Effect of annealing temperature on the properties of copper oxide films prepared by dip coating technique

Effect of annealing temperature on the properties of copper oxide films prepared by dip coating technique

Characterization of Ni thin films following thermal oxidation in air

A Double‐Passivation Water‐Based Galvanic Displacement Method for Reproducible Gram‐Scale Production of High‐Performance Platinum‐Alloy Electrocatalysts

Contact Info

Product

Resources

About