Crystallization and resistivity of amorphous titanium silicide films deposited by coevaporation

Abstract

Texture transformations in reactive metal films deposited upon amorphous substratesFilms of titanium silicide were deposited on oxidized silicon wafers by means of the coevaporation of titanium and silicon. The atomic concentration range 0<SiITi<4 was studied. The films were annealed in hydrogen ambient in the temperature range 300-1000 ·C. For SiITi::::;2, annealing between 800 and 9OO·C results in the formation of TiSi 2 with a resistivity as low as 15-25 /Lflcm and a grain size of 200-500 A. In situ annealing in a transmission electron microscope and differential thermal analysis show that the crystallization of the silicide starts at 350 ·C. The properties of the as-deposited amorphous (Ti + Si) films were found to be consistent with theories for disordered metal-metal alloys. The resistivity behavior (a low temperature coefficient, which is independent of temperature and composition) can be described in terms of Mooij's rule. The crystallization temperature of 350·C is in agreement with a model proposed by Buschow.PACS numbers: 68.60. + q the deposited (Ti + Si) layer directly on one of the thermocouples of a thermal cell, and an uncoated substrate on the 6214

A robust nitridation technique for fabrication of disordered superconducting TiN thin films featuring phase slip events

“…2 c which indicates a clear shifting from the TiSi 2 phase towards elemental Si for T a > 780 °C. As the resistivity of TiSi 2 33 is lower than that of TiN 34 and of Si, the reduced R n for T a ≤ 780 °C compared to that of T a = 820 °C can be originated from the amount of TiSi 2 present in the composite film. Further, the relative concentration of minority TiSi 2 phase changes with T a 18 and hence, R n is expected to change with T a .…”

Activation Energy of AgInSbTe Film through Isothermal Sheet Resistance Measurements

“…The higher sheet resistance of amorphous materials is a well-known phenomenon although the details of the mechanism are still not clear. 3,17,18) The initial sheet resistance of the amorphous AIST films was 1:5 Â 10 6 while that of the polycrystalline films was 43 after annealing at 523 K. The amorphous film transformed to a polycrystalline state after heat treatment, and the sheet resistance consequently decreased. Figure 3 shows the variation in sheet resistance with increasing the annealing temperatures.…”

“…These effects may also be factors leading to the higher electric conductivity of crystallized chalcogenides. [17][18][19] 3.3 The activation energy obtained by DSC Figure 4 shows the results of DSC measurement at the five heating rates of 5, 10, 15, 20 and 30 Kmin À1 . There is only one exothermic peak corresponding to the crystallization temperature of amorphous AIST film at each heating rate.…”

Preparation and Formation Mechanism of Highly Dispersed Manganese Silicide on Silica by MOCVD of Mn(CO)5SiCl3

“…Various preparation methods for metal silicides have been reported so far, such as evaporation and sputtering for films,9, 10 and reactions of transition metal sources (metal vapor or metal halides) with silicon substrates and CVD for nanowires 11–13. MOCVD has proved to be effective for preparing highly dispersed and nanostructured materials in a controlled and reproducible manner 14.…”