Crystallization and semiconductor-metal switching behavior of thin VO2 layers grown by atomic layer deposition

Rampelberg, Geert; Deduytsche, Davy; Schutter, Bob De; Premkumar, Peter Antony; Toeller, Michael; Schaekers, Marc; Martens, Koen; Radu, Iuliana; Detavernier, Christophe

doi:10.1016/j.tsf.2013.10.039

Cited by 36 publications

(58 citation statements)

References 39 publications

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“…The presence of V 6 O 13 phase may be due to the insufficient reduction in the solution precursor which was also reported by other researchers . This phase could be eliminated at higher temperatures (above 670°C); however, at temperatures above 670°C, the soda‐lime glass substrate would be deformed. High background of the pattern between 2θ = 15‐40° belongs to the amorphous glass substrate …”

Section: Resultssupporting

confidence: 60%

Structural, morphological, and optical properties of W‐doped VO₂ thin films prepared by sol‐gel spin coating method

Vostakola

Mirkazemi

Yekta

2019

Int J Applied Ceramic Tech

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Thermochromic VO2 thin films were deposited on soda‐lime glass via sol‐gel method. Doping was done through adding tungstic acid solution to the vanadium solution precursor. Grazing incidence x‐ray diffractometer (GIXRD) results showed that VO2 and V6O13 phases were formed together in the heat‐treated sample. According to the GIXRD result of the W‐doped sample, only VO2 remained. Field‐emission scanning electron microscopy (FESEM) micrographs showed that the VO2 grain size decreased from about 70 to about 25 nm for undoped film and 2 wt% W‐doped films, respectively. Atomic force microscopy (AFM) results showed that the root mean square roughness for the film with 180 nm thickness was about 18 nm, and 2 wt% W‐doped film had a smoother surface. Diffuse reflectance spectroscopy (DRS) results showed that the band gap energy for undoped, 1 wt% W‐ doped, and 2 wt% W‐doped VO2 thin films was 1.7, 1.3, and 0 eV, respectively. Four‐point probe resistivity measurements showed a significant decrement, from approximately 1 MΩ at 15°C to <100 Ω at 80°C. Regarding Vis‐NIR spectroscopy results, maximum optical transmission for undoped and W‐doped films was approximately 75% and 35%, respectively.

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Section: Resultssupporting

confidence: 60%

Structural, morphological, and optical properties of W‐doped VO₂ thin films prepared by sol‐gel spin coating method

Vostakola

Mirkazemi

Yekta

2019

Int J Applied Ceramic Tech

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“…A subsequent annealing step at a controlled temperature and partial pressure of oxygen allows the attainment of crystalline phases. Tetragonal VO 2 was obtained after annealing at 450–530°C under an oxygen partial pressure of 1–10 Pa, while V 6 O 13 was obtained under higher oxygen pressures in a similar temperature range . The metastable monoclinic VO 2 was obtained as an intermediate compound above 430°C and 4.5 Pa of oxygen .…”

Section: Atomic Layer Growth Modementioning

confidence: 93%

“…Tetragonal VO 2 was obtained after annealing at 450-530°C under an oxygen partial pressure of 1-10 Pa, while V 6 O 13 was obtained under higher oxygen pressures in a similar temperature range. [180] The metastable monoclinic VO 2 was obtained as an intermediate compound above 430°C and 4.5 Pa of oxygen. [180] Dagur et al reported the direct growth of the monoclinic VO 2 at 475°C starting from VO(acac) 2 and molecular oxygen.…”

Section: Atomic Layer Growth Modementioning

confidence: 99%

Vanadium Oxide Compounds: Structure, Properties, and Growth from the Gas Phase

Bahlawane¹,

Lenoble²

2014

Chemical Vapor Deposition

156

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The structure‐driven properties of vanadium oxide have inspired enormous developments in the last decades, especially as a smart material for energy, sensors, and optoelectronics. The large variety of stable and metastable structures of vanadium oxide is discussed, based on the calculated formation energies and a broad overview of their structure‐related properties. The established chemical deposition processes from the gas phase are reviewed with a particular emphasis on the implemented precursors and the obtained vanadium oxide phases. Although a significant fraction of relevant vanadium oxide compounds is achieved by these methods, there are still rewarding challenges related to their controlled elaboration and the investigation of their responsive properties.

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“…The formation of a VO 2 (B) phase at lower temperatures has been also observed in radio-frequency sputtering and in post-annealing synthesis. 24,25 Note that VO 2 (B) is metastable and can be transformed into VO 2 (M) by annealing under controlled conditions. 24 As the T S was further decreased to 380…”

Section: A Crystal Structures and Phase Diagrammentioning

confidence: 99%

Optimization of conditions for growth of vanadium dioxide thin films on silicon by pulsed-laser deposition

Shibuya

Sawa

2015

AIP Advances

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We systematically examined the effects of the substrate temperature (TS) and the oxygen pressure (PO2) on the structural and optical properties polycrystalline V O2 films grown directly on Si(100) substrates by pulsed-laser deposition. A rutile-type V O2 phase was formed at a TS ≥ 450 °C at PO2 values ranging from 5 to 20 mTorr, whereas other structures of vanadium oxides were stabilized at lower temperatures or higher oxygen pressures. The surface roughness of the V O2 films significantly increased at growth temperatures of 550 °C or more due to agglomeration of V O2 on the surface of the silicon substrate. An apparent change in the refractive index across the metal–insulator transition (MIT) temperature was observed in V O2 films grown at a TS of 450 °C or more. The difference in the refractive index at a wavelength of 1550 nm above and below the MIT temperature was influenced by both the TS and PO2, and was maximal for a V O2 film grown at 450 °C under 20 mTorr. Based on the results, we derived the PO2 versus 1/TS phase diagram for the films of vanadium oxides, which will provide a guide to optimizing the conditions for growth of V O2 films on silicon platforms.

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Crystallization and semiconductor-metal switching behavior of thin VO2 layers grown by atomic layer deposition

Cited by 36 publications

References 39 publications

Structural, morphological, and optical properties of W‐doped VO₂ thin films prepared by sol‐gel spin coating method

Structural, morphological, and optical properties of W‐doped VO₂ thin films prepared by sol‐gel spin coating method

Vanadium Oxide Compounds: Structure, Properties, and Growth from the Gas Phase

Optimization of conditions for growth of vanadium dioxide thin films on silicon by pulsed-laser deposition

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Crystallization and semiconductor-metal switching behavior of thin VO2 layers grown by atomic layer deposition

Cited by 36 publications

References 39 publications

Structural, morphological, and optical properties of W‐doped VO2 thin films prepared by sol‐gel spin coating method

Structural, morphological, and optical properties of W‐doped VO2 thin films prepared by sol‐gel spin coating method

Vanadium Oxide Compounds: Structure, Properties, and Growth from the Gas Phase

Optimization of conditions for growth of vanadium dioxide thin films on silicon by pulsed-laser deposition

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Product

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Structural, morphological, and optical properties of W‐doped VO₂ thin films prepared by sol‐gel spin coating method

Structural, morphological, and optical properties of W‐doped VO₂ thin films prepared by sol‐gel spin coating method