Crystallization behavior of microcrystalline silicon germanium

Kim, Shinho; Park, Chan-Su; Lee, Jung-Chul; Cho, Jun-Sik; Kim, Jae Won

doi:10.1016/j.tsf.2013.02.136

Cited by 9 publications

(2 citation statements)

References 20 publications

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“… 24 On the other hand, I vacancies act as trap states, capturing or scattering holes, leading to a decrease in both hole concentration and mobility, thereby deteriorating the conductivity of CuI films. 61 Fig. 5 indicated an enhancement in emission peak intensity related to Cu and I vacancies with increasing film thickness, with the ratio of I vacancies peak intensity to Cu vacancies peak intensity gradually increasing.…”

Section: Resultsmentioning

confidence: 92%

The impact of thickness-related grain boundary migration on hole concentration and mobility of p-type transparent conducting CuI films

Xue,

Gao,

Yang

et al. 2024

RSC Adv.

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Section: Resultsmentioning

confidence: 92%

The impact of thickness-related grain boundary migration on hole concentration and mobility of p-type transparent conducting CuI films

Xue,

Gao,

Yang

et al. 2024

RSC Adv.

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“…The mobility of Ge atoms is lower as they are heavier than Si atoms and they require more energy to crystallize. 5 Because there is not enough energy and time for Ge atoms to return to their original crystallization positions, they are likely to move to interstitials forming amorphous thin films rather than crystals. 6 To supplement the decrease in crystallization due to an increase in Ge content, we increased the amount of H 2 gas as the GeH 4 gas increased.…”

Section: Introductionmentioning

confidence: 99%

Improving Memory Characteristics of Hydrogenated Nanocrystalline Silicon Germanium Nonvolatile Memory Devices by Controlling Germanium Contents

Kim¹,

Jang²,

Phu³

et al. 2016

j nanosci nanotechnol

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Nonvolatile memory (NVM) with silicon dioxide/silicon nitride/silicon oxynitride (ONO(n)) charge trap structure is a promising flash memory technology duo that will fulfill process compatibility for system-on-panel displays, down-scaling cell size and low operation voltage. In this research, charge trap flash devices were fabricated with ONO(n) stack gate insulators and an active layer using hydrogenated nanocrystalline silicon germanium (nc-SiGe:H) films at a low temperature. In this study, the effect of the interface trap density on the performance of devices, including memory window and retention, was investigated. The electrical characteristics of NVM devices were studied controlling Ge content from 0% to 28% in the nc-SiGe:H channel layer. The optimal Ge content in the channel layer was found to be around 16%. For nc-SiGe:H NVM with 16% Ge content, the memory window was 3.13 V and the retention data exceeded 77% after 10 years under the programming condition of 15 V for 1 msec. This showed that the memory window increased by 42% and the retention increased by 12% compared to the nc-Si:H NVM that does not contain Ge. However, when the Ge content was more than 16%, the memory window and retention property decreased. Finally, this research showed that the Ge content has an effect on the interface trap density and this enabled us to determine the optimal Ge content.

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Narrow band gap high conducting nc-Si1-xGex:H absorber layers for tandem structure nc-Si solar cells

Dey

Das

2019

Journal of Alloys and Compounds

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Crystallization behavior of microcrystalline silicon germanium

Cited by 9 publications

References 20 publications

The impact of thickness-related grain boundary migration on hole concentration and mobility of p-type transparent conducting CuI films

The impact of thickness-related grain boundary migration on hole concentration and mobility of p-type transparent conducting CuI films

Improving Memory Characteristics of Hydrogenated Nanocrystalline Silicon Germanium Nonvolatile Memory Devices by Controlling Germanium Contents

Narrow band gap high conducting nc-Si1-xGex:H absorber layers for tandem structure nc-Si solar cells

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