Crystallization effects in annealed thin Ge–Se films photodiffused with Ag

Balakrishnan, M.; Kozicki, Michael; Poweleit, C. D.; Bhagat, Shekhar; Alford, Terry; Mitkova, M.

doi:10.1016/j.jnoncrysol.2005.09.051

Cited by 45 publications

(18 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The host network of Ge-Se consists of Se-rich tetrahedral GeSe 2 and non-tetrahedral Ge-rich phases including the ethane-like Ge 2 Se 3 units. These subnetworks were reported in GeSe 2 by Boolchand and coworkers [18] and in ternary chalcogenide glasses by Mitkova and coworkers [19]. We find that these Ge-Se stoichiometries have different bondlength distributions: Se rich phases (n Ge−Se ≥ 4) have bondlengths smaller than 2.55 Å whereas Ge-rich phases (n Ge−Se < 4) have bondlengths longer than 2.55 Å.…”

supporting

confidence: 80%

Amorphous to Amorphous Insulator-Metal transition in GeSe$_3$:Ag glasses

Prasai,

Chen,

Drabold

2017

Preprint

View full text Add to dashboard Cite

We study an insulator-metal transition in a ternary chalcogenide glass (GeSe3)1−xAgx for x=0.15 and 0.25. The conducting phase of the glass is obtained by using "Gap Sculpting" (Prasai et al, Sci. Rep. 5:15522 (2015)) and it is observed that the metallic and insulating phases have nearly identical DFT energies but have a conductivity contrast of ∼ 10 8 . The transition from insulator to metal involves growth of an Ag-rich phase accompanied by a depletion of tetrahedrally bonded Ge(Se 1/2 )4 in the host network. The relative fraction of the amorphous Ag2Se phase and GeSe2 phase is shown to be a critical determinant of DC conductivity.

show abstract

supporting

confidence: 80%

Amorphous to Amorphous Insulator-Metal transition in GeSe$_3$:Ag glasses

Prasai,

Chen,

Drabold

2017

Preprint

View full text Add to dashboard Cite

show abstract

“…These glasses are good solid electrolytes with high Ag ionic conduction at room temperature. 12,13 However, this phase separation is dependent on the chalcogenide composition, Ge rich samples being more homogeneous and requiring a higher annealing temperature (>300 1C) to crystallize. 3 This process is reversible by applying a bias with opposite polarity.…”

Section: Introductionmentioning

confidence: 99%

The role of the local chemical environment of Ag on the resistive switching mechanism of conductive bridging random access memories

Souchier

d’Acapito

Noé

et al. 2015

Phys. Chem. Chem. Phys.

View full text Add to dashboard Cite

Conductive bridging random access memories (CBRAMs) are one of the most promising emerging technologies for the next generation of non-volatile memory. However, the lack of understanding of the switching mechanism at the nanoscale level prevents successful transfer to industry. In this paper, Ag/GeSx/W CBRAM devices are analyzed using depth selective X-ray Absorption Spectroscopy before and after switching. The study of the local environment around Ag atoms in such devices reveals that Ag is in two very distinct environments with short Ag-S bonds due to Ag dissolved in the GeSx matrix, and longer Ag-Ag bonds related to an Ag metallic phase. These experiments allow the conclusion that the switching process involves the formation of metallic Ag nano-filaments initiated at the Ag electrode. All these experimental features are well supported by ab initio molecular dynamics simulations showing that Ag favorably bonds to S atoms, and permit the proposal of a model at the microscopic level that can explain the instability of the conductive state in these Ag-GeSx CBRAM devices. Finally, the principle of the nondestructive method described here can be extended to other types of resistive memory concepts.

show abstract

“…As the popular use of Cu in nowadays damascene interconnects, the Cu based electrochemical metallization cells (ECM) are of particular importance and more competitive compared with other types emerging memory, by considering the compatibility and fabrication cost. In the early years, chalcogenides such as sulphides 10 , iodides 11 , selenides 12 and tellurides 13 , were used as ECM switching materials. These materials showed very promising performance except the ultra-low switching voltage, which allowed small thermal and electrical noises to disturb the resistance state.…”

mentioning

confidence: 99%

Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory

Liu

et al. 2015

Sci Rep

129

View full text Add to dashboard Cite

The electrochemical metallization cell, also referred to as conductive bridge random access memory, is considered to be a promising candidate or complementary component to the traditional charge based memory. As such, it is receiving additional focus to accelerate the commercialization process. To create a successful mass product, reliability issues must first be rigorously solved. In-depth understanding of the failure behavior of the ECM is essential for performance optimization. Here, we reveal the degradation of high resistance state behaves as the majority cases of the endurance failure of the HfO2 electrolyte based ECM cell. High resolution transmission electron microscopy was used to characterize the change in filament nature after repetitive switching cycles. The result showed that Cu accumulation inside the filament played a dominant role in switching failure, which was further supported by measuring the retention of cycle dependent high resistance state and low resistance state. The clarified physical picture of filament evolution provides a basic understanding of the mechanisms of endurance and retention failure, and the relationship between them. Based on these results, applicable approaches for performance optimization can be implicatively developed, ranging from material tailoring to structure engineering and algorithm design.

show abstract

Crystallization effects in annealed thin Ge–Se films photodiffused with Ag

Cited by 45 publications

References 14 publications

Amorphous to Amorphous Insulator-Metal transition in GeSe$_3$:Ag glasses

Amorphous to Amorphous Insulator-Metal transition in GeSe$_3$:Ag glasses

The role of the local chemical environment of Ag on the resistive switching mechanism of conductive bridging random access memories

Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory

Contact Info

Product

Resources

About