Crystallization kinetics and thermal stability of some compositions of Ge–In–Se chalcogenide system

Ghani, H.A. Abd El; Rahim, M.M. Abd El; Wakkad, M. M.; Sehli, A. Abo; Assraan, N.

doi:10.1016/j.physb.2005.12.266

Cited by 35 publications

(5 citation statements)

References 30 publications

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“…6. However, it is seen that values of DE are clearly smaller than E g /2 (where E g is the corresponding optical band gap of the mentioned composition which we taken from our previous work [13]). In addition, it is seen that DE initially decreased to a minimum value at Ge 19 increase of Ge content.…”

Section: Article In Pressmentioning

confidence: 75%

The electrical conductivity of GexIn8Se92−x (14⩽x⩽25.5 at%) chalcogenide thin films

Ghanny

Wakkad

Sehli

et al. 2006

Physica B: Condensed Matter

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Section: Article In Pressmentioning

confidence: 75%

The electrical conductivity of GexIn8Se92−x (14⩽x⩽25.5 at%) chalcogenide thin films

Ghanny

Wakkad

Sehli

et al. 2006

Physica B: Condensed Matter

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“…2 also shows an increase in density with an increase in Bi at.% (calculated later). A linear relationship between density and glass transition temperature is also experimentally proved in the literature [34].…”

Section: Correlation Between Mean Bond Energy E and Glass Transition mentioning

confidence: 67%

Analysis of glass forming ability using percolation concept and tunability of physical parameters of a-Ge₁₂Se₇₆-_xAs₁₂Bi_xglassy semiconductors

Sharma

Sunder

2018

Materials Science-Poland

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Glass forming ability of lone-pair semiconductors was analyzed for (x = 0, 2, 4, 6, 8, 10) system. Values of lone pair electrons L were calculated using average coordination number of valence electrons. These values were found to decrease, as the system was moving towards the rigid region. L > 3 values showed vitreous state. Deviation of the stoichiometry confirmed the chalcogen-rich region. A linear correlation was found between the mean bond energy and glass transition temperature. Chemical Bond Approach model was applied to calculate the cohesive energy of the system. A linear relationship was found to exist between the cohesive energy and the theoretical band gap, calculated using Shimakawa relation. A decrease in both parameters was explained on the basis of average stabilization energy and electronegativity of the system. The density values were found to increase and may account for higher refractive index of the system. Large Bohr radius of the Bi atom accounted for an increase in the polarizability. Other parameters viz. degree of covalency, packing density, compactness, molar volume, free volume percentage, excess volume and polaron radius were also calculated. An effort was made to correlate the effect of Bi addition to Ge12Se76 - xAs12Bixlone-pair semiconductor on the basis of the structure of the glassy matrix or the connectedness of the material.

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“…( 13) Erm is the average bond energy per atom of the remaining matrix i.e. the contribution arising from weaker bonds that remain after the strong bonds have been maximized [55], which is defined as (17) where S S E − is the homopolar bond energy of S S − bonds (given in Table 1) and E<> is the average bond energy of a 'metal-metal' bond in the chalcogen-poor region and given as:…”

Section: The Overall Mean Bond Energymentioning

confidence: 99%

Theoretically Predicted Deviation in Physical Properties of Ge-Bi-S Chalcogenide Alloys With Compositional Variations

Dabban

Al-Badwi²,

Al-Khadher³

2023

Electron. J. Univ. Aden Basic Appl. Sci.

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Chalcogenide glasses (ChGs) semiconductors have several useful properties, especially in their technical applications. The present work explains the compositional dependence of many physical properties of GexBi5S95-x (x = 0, 10, 20, 30, 35 and 45 at. %). Increasing Ge content reduces the fraction of floppy modes, the lone pair electrons, the stoichiometric deviation, and the heat of atomization, while the average coordination number 〈r〉, constraints, density, and molar volume increased, indicating the alloys have moved from floppy to rigid mode. The average overall bond energy, electronegativity difference, band gap energy, and glass transition temperature were estimated by analyzing the bond energies and its distribution based on the bond ordered network model (CONM). It has been found that all these parameters increase with Ge ≤ 30 at. % and decrease with the further increase of Ge content. This behavior can be explained in terms of the network chemical percolation threshold proposed by Tanaka. This threshold represents a topological phase transition from a two-dimensional structure at r˂2.67 to a three-dimensional structure at r≥2.67. The incorporation of Ge into the glassy Bi-S system yields interesting physical properties such as threshold and phase transition, confirming this composition's suitability for optical storage media.

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Crystallization kinetics and thermal stability of some compositions of Ge–In–Se chalcogenide system

Cited by 35 publications

References 30 publications

The electrical conductivity of GexIn8Se92−x (14⩽x⩽25.5 at%) chalcogenide thin films

The electrical conductivity of GexIn8Se92−x (14⩽x⩽25.5 at%) chalcogenide thin films

Analysis of glass forming ability using percolation concept and tunability of physical parameters of a-Ge₁₂Se₇₆-_xAs₁₂Bi_xglassy semiconductors

Theoretically Predicted Deviation in Physical Properties of Ge-Bi-S Chalcogenide Alloys With Compositional Variations

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Crystallization kinetics and thermal stability of some compositions of Ge–In–Se chalcogenide system

Cited by 35 publications

References 30 publications

The electrical conductivity of GexIn8Se92−x (14⩽x⩽25.5 at%) chalcogenide thin films

The electrical conductivity of GexIn8Se92−x (14⩽x⩽25.5 at%) chalcogenide thin films

Analysis of glass forming ability using percolation concept and tunability of physical parameters of a-Ge12Se76-xAs12Bixglassy semiconductors

Theoretically Predicted Deviation in Physical Properties of Ge-Bi-S Chalcogenide Alloys With Compositional Variations

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Analysis of glass forming ability using percolation concept and tunability of physical parameters of a-Ge₁₂Se₇₆-_xAs₁₂Bi_xglassy semiconductors