Crystallization kinetics of Sn doped Ge20Te80−xSnx (0 ≤ x ≤ 4) chalcogenide glassy alloys

Fernandes, Brian Jeevan; Naresh, N.; Ramesh, K.; Sridharan, Kishore; Udayashankar, N.K.

doi:10.1016/j.jallcom.2017.06.070

Cited by 23 publications

(8 citation statements)

References 74 publications

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“…The extracted values of E g for the examined quaternary composition are recorded in table 2. The obtained values of E g from the former three equations are close to each other and agree well with that obtained for various ChGs [7,44,50]. The average value of ̅ E g is equal to 121.33 kJ mol −1 .K for TSG − Sb which is higher than that obtained previously for TSG (104.7 kJ mol −1 .K) [9].…”

Section: Glass Transition Regionsupporting

confidence: 88%

“…The estimated values of the constants a and b are 356.5 ± 3.2 and 9.6 ± 0.4, respectively which agree with the values obtained previously for various ChGs [7,44,50]. The variation of T g with the rate of heating a can be interpreted using a variaty of proposed models to calculate the avarege values of glass transition activation energy ̅ E g [51][52][53]: Moynihan model [51]:…”

Section: Glass Transition Regionsupporting

confidence: 85%

“…The values of T rg were calculated from equation (13) at various heating rates a for TSG−Sb composition and listed in table 3. The avarage value of ̅ T rg is 0.683 K which is in good agreement with different ChGs [15,31,50,60] indicating that TSG−Sb has a considerable glass formation ability [7, 9, 60].…”

Section: Reduced Glass Transition Temperaturementioning

confidence: 54%

“…The average value of ̅ E g is equal to 121.33 kJ mol −1 .K for TSG − Sb which is higher than that obtained previously for TSG (104.7 kJ mol −1 .K) [9]. Herein, the incorporation of Sb element in TSG base resulting in a decrement in the internal energy of atoms due to the restriction of their mobility, which increases the height of the barrier between adjacent metastable states, obstructing the jumping of atoms to other stable states [7,44,50].…”

Section: Glass Transition Regionmentioning

confidence: 65%

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Non-isothermal crystallization kinetics and memory switching properties of Tl-Se-Ge-Sb chalcogenide semiconductor alloy for thermally stable phase change memory applications

El-Metwally,

Ismail

2023

Phys. Scr.

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Quaternary (Tl20Se70Ge10)0.85Sb0.15 chalcogenide glass was synthesized using melt-quenching and thermal evaporation techniques for bulk and thin film samples, and its amorphous character was confirmed by XRD. Based on different models of non-isothermal crystallization kinetics, the average values of the glass transition E ̅ g and the crystallization E ̅ c activation energies are 121.33 and 82.94 kJ mol−1, respectively. The crystallization mechanism in the examined composition is 2D nucleation growth, according to Avrami exponent n . Thermal parameters of the studied quaternary glass, like fragility F g , fluctuation free volume F FV , reduced glass transition temperature T rg , thermal stability SP and glass formation ability GFA were investigated and indicated that the (Tl20Se70Ge10)0.85Sb0.15 ChG exhibits a good ability of glass formation and thermal stability. The obtained results of the dc electrical conductivity σ dc are found to increase with temperature and decrease with film thickness. The electrical conduction activation energy ∆ E σ (0.583 ± 0.004 eV) is thickness independent and the predominant conduction mechanism is the hopping of charge carriers in the band tail localized states. The ( I – V ) curves of (Tl20Se70Ge10)0.85Sb0.15 chalcogenide glass film samples were analyzed and shown to be appropriate for a memory switch. The mean value of the threshold voltage V ̅ th decreases exponentially as temperature increases, whereas it increases linearly as film thickness increases. The values of threshold voltage ε th and threshold resistance ∆ E R activation energies are 0.282 ± 0.003 and 0.521 ± 0.004 eV, respectively. The obtained switching characteristics data were discussed in view of the electrothermal model motivated by current channel Joule heating. These findings highlight the suitability of the investigated composition for various optoelectronic applications, such as memory switching devices, optical data storage, phase-change memories and optical fibres sensing devices.

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Section: Glass Transition Regionsupporting

confidence: 88%

Section: Glass Transition Regionsupporting

confidence: 85%

Section: Reduced Glass Transition Temperaturementioning

confidence: 54%

Section: Glass Transition Regionmentioning

confidence: 65%

See 2 more Smart Citations

Non-isothermal crystallization kinetics and memory switching properties of Tl-Se-Ge-Sb chalcogenide semiconductor alloy for thermally stable phase change memory applications

El-Metwally,

Ismail

2023

Phys. Scr.

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“…Compared with the isothermal experiments that are generally time-consuming, the non-isothermal method is frequently employed to investigate the crystallization kinetics. In last decades, the chalcogenides of binary, − ternary, ,− and quaternary ,, were extensively studied by the non-isothermal method. For the crystallization kinetics of elemental chalcogens, selenium (Se) is the most frequently studied due to its low critical cooling rate ( R c ), moderate crystallization temperature ( T c ) and glass transition temperature ( T g ).…”

Section: Introductionmentioning

confidence: 99%

New Methods Versus Old Questions: Crystallization Kinetics of S, Se, and Te

Chen

Wang²,

Shen³

et al. 2019

Crystal Growth & Design

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Using conventional differential scanning calorimetry (DSC) and Flash DSC, we revisited the old question of crystallization kinetics of chalcogens. Together with the appropriate viscosity models and Stokes− Einstein relation, the quantitative results of crystallization kinetics in chalcogenide supercooled liquids were revealed. It showed that the fragilities of S, Se, Te are 126, 67.5, 60, and the maximum crystal growth rates are 9.7 × 10 −3 , 1.3 × 10 −6 , and 0.47 m s −1 at 0.91, 0.94, and 0.86 T m , respectively. Such results not only benefit to understand the fundamental science but also help to design new chalcogenide compositions for applications.

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Investigations of thermal, optical and electrical properties of Se85In15−xBix glasses and thin films

Tripathi

Alvi

Khan

2020

J Therm Anal Calorim

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Crystallization kinetics of Sn doped Ge20Te80−xSnx (0 ≤ x ≤ 4) chalcogenide glassy alloys

Cited by 23 publications

References 74 publications

Non-isothermal crystallization kinetics and memory switching properties of Tl-Se-Ge-Sb chalcogenide semiconductor alloy for thermally stable phase change memory applications

Non-isothermal crystallization kinetics and memory switching properties of Tl-Se-Ge-Sb chalcogenide semiconductor alloy for thermally stable phase change memory applications

New Methods Versus Old Questions: Crystallization Kinetics of S, Se, and Te

Investigations of thermal, optical and electrical properties of Se85In15−xBix glasses and thin films

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