Crystallization Mechanism and Raman Characteristics of ZnO/In/ZnO Thin Film Using an Electrical Current Method

Abstract

ZnO/In/ZnO tri-layer thin films were designed and fabricated by RF sputtering on copolymer substrate. Under an electrical current, the thermoelectric effect of direct current (DC) reduced the electrical resistance and improved the crystallization and Raman properties. Also, indium atoms had migrated into the ZnO matrix and a diffusion layer in the ZnO/In interface had grown. The electrical current induced temperature is $140C and the copolymer substrate suffers no damage and so can be applied to the low temperature optoelectronic devices.

Microstructural Characteristics of InGaZnO Thin Film Using an Electrical Current Method

“…Clearly, the In atoms provide a great contribution to diffusion doping under the EIC mechanism. 11,21) XPS depth profiles of the films before and after EIC test are shown in Fig. 8.…”

“…The resistance of the films was measured using Hall effect measurement before and after annealing. 11) According to the data of electric resistance, three samples A, B and C (A sample: O 2 flow rate is 0 sccm; annealing temperature is 575 K, B sample: O 2 flow rate is 5 sccm; without annealing, C sample: O 2 flow rate 5 sccm; annealing temperature is 575 K) were subjected to X-ray and electron spectroscopy for chemical analysis (ESCA) to analyze the phase composition and the depth composition of the IGZO thin films. The Cu-K¡ standard ( = 1.5403 nm) was used, the scanning angle was varied from 20 to 90°and the scanning velocity was 2°·min…”

“…7,9,10) Electrical current testing is a low temperature process carried out in atmosphere. 11) Its mechanism is an electrical current induced crystallization (EIC) 12,13) that has been largely ignored in the optoelectronic thin films until now. So, the present study performed electrical current experiments on In thin film to discuss the electrical current crystallization characteristics of the IGZO/In structure at low temperature (During electrical current testing, the surface temperature of the film was raised by joule heat and was <455 K).…”

The Effects of Crystallization on Mechanical Mechanism and Residual Stress of Sputtered Ag Thin Films

“…10). 13,28,29) After this, the 30 nm Ag film possessed the current induced crystallization (EIC). A comparison of crystallization, residual stress and resistivity between the as-sputtered and electrical current treatment is shown in Table 3.…”

“…12) In addition, electrical current testing is a low temperature process carried out in atmosphere. 13) Its mechanism is an electrical current induced crystallization (EIC). 14,15) Thus, this paper not only investigates the crystallographic texture of nano Ag thin film (30 400 nm), but also discusses the solidification residual stress before and after EIC testing, as well as the near surface hardness and conductivity so as to further understand the potential for use as a thin film material.…”