Crystallization of Si Templates of Controlled Shape, Size, and Orientation: Toward Micro- and Nanosubstrates

Abstract

International audienceFiber-textured polycrystalline silicon thin films have demonstrated their interest as seed layers for the epitaxial growth of high-quality materials on substrates such as glass or plastics. In the present work, we report a comprehensive study of the aluminum-induced crystallization (AIC) of isolated Si domains. Our study not only demonstrates the fabrication by AIC of shape- and size-controlled Si monocrystals at the nanoscale but also allows for the prediction of minimal annealing conditions for complete crystallization of such structures. These ultrathin [111]-oriented monocrystals are promising candidates as selected-area epitaxy substrates with both an easy control on the morphology of these structures and a low-temperature fabrication process

Metal-induced layer exchange of group IV materials

“…However, even in such cases, it is possible to control the diffusion rate and achieve LE by inserting an appropriate interlayer between metal and semiconductor [47]. The quality of the metal and amorphous semiconductor layers, which varies with preparation method and conditions, also affects the possibility and various morphology of LE [48][49][50][51], which likely reflects the diffusion rate. Oxygen contamination should be avoided because too much oxygen in metals or semiconductors inhibits complete LE [52,53].…”

“…This multilayer technique is also useful for the LE in materials other than Ge [130]. In such a system capable of obtaining a large grain size, single crystals can be obtained at arbitrary positions by limiting the area of the initially prepared film [49,[131][132][133].…”