Crystallographic and Ferroelectric Properties Subjected   to Two-Dimensional Stress in c-Axis-Oriented PbTiO<sub>3</sub> Thin Films

Yamamoto, Takashi; Matsuoka, Hiroki

doi:10.1143/jjap.33.5317

Cited by 35 publications

(12 citation statements)

References 7 publications

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“…17 The shift of the Curie point towards higher temperatures in thin ferroelectric films with respect to that in the corresponding bulk material was predicted in different models considering the effect of interfaces of the films. 15,[23][24][25] In contrast to these models, the temperature of the dielectric maximum in the PMNT and PSNT films in the present study was not higher than the T m of the bulk materials. This indicated a weak effect of the interfaces on the properties of the films.…”

Section: E Temperature Of Dielectric Maximumcontrasting

confidence: 92%

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Dielectric properties of pulsed laser deposited films of PbMg1/3Nb2/3–PbTiO3 and PbSc1/2Nb1/2O3–PbTiO3 relaxor ferroelectrics

Tyunina

Levoska

Sternberg

et al. 1999

Journal of Applied Physics

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Highly oriented perovskite films of PbMg1/3Nb2/3–PbTiO3 and PbSc1/2Nb1/2O3–PbTiO3 with compositions near the morphotropic phase boundary were formed by pulsed laser deposition on La0.5Sr0.5CoO3/MgO (100). The dielectric properties of the films were studied over the frequency range of 100 Hz–1 MHz in the temperature range 20–350 °C. The room temperature polarization and dielectric permittivity of 250-nm-thick films were close to those in bulk ceramics. The films exhibited relaxor-type behavior with thermal hysteresis and with the temperatures of the dielectric peaks corresponding to those in the bulk. The width of the transition in the films was larger than in bulk ceramics. The properties of the films were found to be influenced by the small grain size rather than by the interfaces of the films.

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Section: E Temperature Of Dielectric Maximumcontrasting

confidence: 92%

“…Suppression of polarization was observed in the films of lead zirconate titanate, lead titanate, and barium titanate. 2,3,15,16 The polarization in the PMNT and PSNT films, however, did not differ drastically from the bulk value, revealing a rather weak effect of the interfaces.…”

Section: B Ferroelectric Hysteresismentioning

confidence: 83%

Dielectric properties of pulsed laser deposited films of PbMg1/3Nb2/3–PbTiO3 and PbSc1/2Nb1/2O3–PbTiO3 relaxor ferroelectrics

Tyunina

Levoska

Sternberg

et al. 1999

Journal of Applied Physics

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“…Similar results were obtained with finite-element modeling, in conjunction with thermodynamic theory, by Yamamoto and Matsuoka. 24 These calculated trends have been substantiated by the experimental work of Kumazawa et al 25 in which bending tensile stress applied to a PZT thin films reduced P r by only ϳ0.6% per 100 MPa and P s by ϳ0.8% per 100 MPa. Under compression the saturation polarization was completely independent of stress, and the remanent polarization increased by ϳ3.4% per 100 MPa.…”

Section: Resultsmentioning

confidence: 67%

Modification of (Pb,La)(Zr,Ti)O3 thin films during pulsed laser liftoff from MgO substrates

Tsakalakos

Sands

Carleton

et al. 2003

Journal of Applied Physics

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Articles you may be interested inStructure and properties of W O 3 -doped Pb 0.97 La 0.03 ( Zr 0.52 Ti 0.48 ) O 3 ferroelectric thin films prepared by a sol-gel process Dielectric and ferroelectric properties of compositionally graded (Pb,La)TiO 3 thin films on Pt/Ti/SiO 2 /Si substrates Appl.Single-crystal Pb(Zr x Ti 1−x ) O 3 thin films prepared by metal-organic chemical vapor deposition: Systematic compositional variation of electronic and optical properties Pulsed excimer laser irradiation of an absorbing thin film through a transparent substrate has been employed to separate epitaxial (Pb,La)(Zr,Ti)O 3 ͑PLZT͒ thin films from their MgO growth substrates. The morphology, microstructure, and dielectric properties of the laser-modified PLZT layer generated at the original PLZT/MgO interface by this laser liftoff ͑LLO͒ process was investigated. Atomic force microscopy measurements of the film surface after LLO indicated average surface roughness on the order of 90-100 nm, complementing previously reported scanning electron microscopy studies that revealed what appeared to be a rough glassy layer. The surface roughness is thought to form as the original growth substrate is ejected from the films transferred towards the end of the 38 ns pulse, pulling the molten near-interfacial portion of the PLZT film via surface tension, and followed by quenching of the liquid phase. Transmission electron microscopy of PLZT films transferred to Si wafers showed the surface layer consists of an irregular amorphous layer ranging in thickness from 50 to 100 nm, although some surface features protruded as far as 300 nm. Enhanced levels of lead were found to be present in the amorphous phase by Rutherford backscattering spectrometry, implying PbO evaporation and subsequent condensation during LLO. Electrical measurements determined the relative dielectric constant of the surface layer to be in the range of 40 -70. Subsequent ion milling of the layer demonstrated that the ferroelectric and dielectric properties of the original PLZT films were largely recovered, while the surface roughness was reduced to below 40 nm. The observed differences between the dielectric and ferroelectric properties of the film transferred after complete removal of the amorphous layer compared to those of the film on the original MgO substrate are attributed to the removal of substrate clamping.

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“…The dielectric constant also shows the sharp peak at their Curie temperature, although the Curie temperature varies with the stress as shown in Fig.4 [2]. temperature of 520°C.…”

Section: Dielectric Propertiesmentioning

confidence: 88%

“…Their Curie temperature varied with stress due to the lattice and thermal expansion mismatch between thin films and the substrates [2]. However, their ferroelectric properties are essentially similar to those of bulk ceramics, ifwe neglect the effects ofthe disordered interface between ferroelectric thin films and substrates [3].…”

Section: Introductionmentioning

confidence: 99%

Modified ferroelectric properties of the single c-domain/single crystal PbTiO 3 thin films with tightly bonded interface

Wasa

Asayama

et al. 2000

Superconducting and Related Oxides: Physics and Nanoengineering IV

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Continuous single c-domain! single crystal thin films of PbTiO3 (PT) , 10 to 300 nm in film thickness, were epitaxially grown on the miscut (OO1)SrTiO3 substrates. The PT thin films were grown under a step-flow growth and their surface was atomically flat. The interface between thin films and the substrates were coherrent. These sputtered PT thin films were tetragonally deformed but the thin films were tightly bonded to the susbstrates. The lattice parameters did not change at the Curie temperature. The PT thin films exhibited modified ferroelectric properties and/or 2nd order like ferro-paraelectric phase transition. The PT thin films exhibited a diffused peak at the Curie temperature of 520°C. The P/E hysteresis curve showed a sharp switching property with a rectangular pattern and a high coercive field of400 to 500 kV/cm.

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Crystallographic and Ferroelectric Properties Subjected to Two-Dimensional Stress in c-Axis-Oriented PbTiO₃ Thin Films

Cited by 35 publications

References 7 publications

Dielectric properties of pulsed laser deposited films of PbMg1/3Nb2/3–PbTiO3 and PbSc1/2Nb1/2O3–PbTiO3 relaxor ferroelectrics

Dielectric properties of pulsed laser deposited films of PbMg1/3Nb2/3–PbTiO3 and PbSc1/2Nb1/2O3–PbTiO3 relaxor ferroelectrics

Modification of (Pb,La)(Zr,Ti)O3 thin films during pulsed laser liftoff from MgO substrates

Modified ferroelectric properties of the single c-domain/single crystal PbTiO 3 thin films with tightly bonded interface

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Crystallographic and Ferroelectric Properties Subjected to Two-Dimensional Stress in c-Axis-Oriented PbTiO3 Thin Films

Cited by 35 publications

References 7 publications

Dielectric properties of pulsed laser deposited films of PbMg1/3Nb2/3–PbTiO3 and PbSc1/2Nb1/2O3–PbTiO3 relaxor ferroelectrics

Dielectric properties of pulsed laser deposited films of PbMg1/3Nb2/3–PbTiO3 and PbSc1/2Nb1/2O3–PbTiO3 relaxor ferroelectrics

Modification of (Pb,La)(Zr,Ti)O3 thin films during pulsed laser liftoff from MgO substrates

Modified ferroelectric properties of the single c-domain/single crystal PbTiO 3 thin films with tightly bonded interface

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Crystallographic and Ferroelectric Properties Subjected to Two-Dimensional Stress in c-Axis-Oriented PbTiO₃ Thin Films