Crystallographic Characterization of AgGaTe2, AgAlTe2, and Ag(Ga,Al)Te2 Grown by Closed-Space Sublimation

Uruno, Aya; Usui, Ayaka; Inoue, Tomio; Takeda, Yuji; Kobayashi, Masakazu

doi:10.1007/s11664-015-3733-5

Cited by 8 publications

(7 citation statements)

References 19 publications

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“…On the other side, Ag‐based compounds have the lower valence band position than Cu‐based compounds because of the lower d‐orbital energy and longer bond length. Some Ag‐based compounds, like AgInSe 2 , AgAlTe 2 , AgGaTe 2 , and Ag 2 ZnSnSe 4 , have also been studied as the absorber for the single band gap solar cell. The n‐type conductivity has been reported in these Ag‐based compounds, which make them have the ability to keep the IB half‐filled.…”

Section: Introductionmentioning

confidence: 99%

Theoretical Design of the Absorber for Intermediate Band Solar Cells from Group‐IV (Si, Ge, and Sn)‐Doped AgAlSe₂

Jiang

Cen

Dong

et al. 2018

Physica Status Solidi (b)

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Recently, chalcopyrite compounds have been extensively studied as the absorber for solar cells. Inserting an intermediate band in the main band gap of the absorber has been proposed to exceed the Shockley–Queisser limit on single band solar cells. In this paper, the group‐IV elements Si, Ge, and Sn substituting at Al site in AgAlSe2 to form an intermediate band in the main band gap has been studied by first‐principles calculations. The half‐filled intermediate bands from the antibonding state of group‐IV s state and Se‐p state show delocalized characteristics and just shift from each other in Si, Ge, and Sn‐doped AgAlSe2. Based on the analysis on the position of the intermediate band and defect formation energy, Si‐doped AgAlSe2 has been excluded and Ge and Sn‐doped AgAlSe2 have been suggested as promising absorber for the intermediate band solar cell. A heterojunction based on CuAlTe2, AgAlSe2:Sn, and CdS has been proposed as a suitable device for intermediate band solar cells after considering the lattice mismatch and band alignment.

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Section: Introductionmentioning

confidence: 99%

Theoretical Design of the Absorber for Intermediate Band Solar Cells from Group‐IV (Si, Ge, and Sn)‐Doped AgAlSe₂

Jiang

Cen

Dong

et al. 2018

Physica Status Solidi (b)

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“…It was cleared that crystallographic properties of both Ag(Ga,Al)Te 2 layers grown using different source materials were similar, and both layers exhibited a strong preference for the (112) orientation. AgAlTe 2 and the AgGaTe 2 layers exhibited the same preference for the (112) orientation [12]. Therefore it was revealed that not only AgAlTe 2 and AgGaTe 2 but also their solid solutions exhibited the similar preferential epitaxial relationship with the c-plane sapphire substrate.…”

Section: Contributed Articlementioning

confidence: 89%

“…Therefore, Ag(Ga,Al)Te 2 would be suitable for a novel solar cell material. AgGaTe 2 and AgAlTe 2 have been successfully grown on c-and a-plane sapphire substrates by the closed space sublimation (CSS) method, and it was shown that they had a preferential epitaxial relationship with the c-plane sapphire substrate rather than a-plane sapphire [10][11][12]. The CSS method is regarded as a low cost technique with large-area manufacturing potential because of its high throughput and efficient material consumption.…”

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confidence: 99%

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Crystallographic and optical characterizations of Ag(Ga,Al)Te₂ layers grown on c ‐plane sapphire substrates by closed space sublimation

Uruno

Takeda

Inoue

et al. 2016

Phys. Status Solidi C

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Das 19. Jahrhundert war eine spannende Forschungs‐ und Technikzeit. Die Chemie erwachte als Wissenschaft und Industrie. Chemiker erkundeten die Geheimnisse des Steinkohlenteers, gründeten Fabriken, und Techniker schufen eine neue Generation von Maschinen und Anlagen. In den Chemiewerken setzten sie die wissenschaftlichen Erkenntnisse in neue Produkte um. In dieser Pionierzeit wurden auch zwei kleine Berliner Chemieunternehmen gegründet, aus denen später die Weltmarke “Agfa” hervorging. Ursprünglich konzentriert auf die Entwicklung und Produktion von Teer‐ oder Anilinfarbstoffen, erschloss sich das Unternehmen mit viel Pioniergeist, Engagement, Innovationen und finanziellem Risiko ein neues, zum großen Teil noch unerforschtes Geschäftsfeld – die Fotografie.

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“…As such, AgGaTe 2 is another candidate solar cell material, and thin films of AgGaTe 2 have been prepared toward the realization of novel solar cells . The growth of crystallized and (112) oriented AgGaTe 2 layers by the CSS method has been successfully achieved on glass, Si (111), and a ‐plane and c ‐plane sapphire substrates using a AgGaTe 2 powder source . To understand and acquire information on the device behavior and properties of p‐AgGaTe 2 layers, p‐AgGaTe 2 was deposited on n‐Si substrate in this study.…”

Section: Introductionmentioning

confidence: 99%

Structural and electric properties of AgGaTe₂ layers prepared using mixed source of Ag₂Te and Ga₂Te₃

Uruno

Kobayashi

2016

Physica Status Solidi (a)

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AgGaTe2 layers were prepared on Si substrates by a closed space sublimation method using a mixed powder source of Ag2Te and Ga2Te3. Ag2Te buffer layer deposition was introduced to eliminate melt‐back etching. The effect of the molar ratio of Ag2Te and Ga2Te3 in the mixed source on the crystallinity of the AgGaTe2 layer was investigated. The composition and the phase of the layer was found to change depending on the molar ratio in the deposits, which could be controlled by the source molar ratio along with the Ag2Te buffer layer thickness. It was confirmed that (112) oriented uniform AgGaTe2 layer with an abrupt interface between AgGaTe2 and Si was formed after those parameters were tuned. The obtained layer exhibited the acceptor concentration of around 2.5 × 1016 cm−3. A solar cell was fabricated using the p‐AgGaTe2/n‐Si heterojunction, and exhibited a conversion efficiency of 1.15%.

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Crystallographic Characterization of AgGaTe2, AgAlTe2, and Ag(Ga,Al)Te2 Grown by Closed-Space Sublimation

Cited by 8 publications

References 19 publications

Theoretical Design of the Absorber for Intermediate Band Solar Cells from Group‐IV (Si, Ge, and Sn)‐Doped AgAlSe₂

Theoretical Design of the Absorber for Intermediate Band Solar Cells from Group‐IV (Si, Ge, and Sn)‐Doped AgAlSe₂

Crystallographic and optical characterizations of Ag(Ga,Al)Te₂ layers grown on c ‐plane sapphire substrates by closed space sublimation

Structural and electric properties of AgGaTe₂ layers prepared using mixed source of Ag₂Te and Ga₂Te₃

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Crystallographic Characterization of AgGaTe2, AgAlTe2, and Ag(Ga,Al)Te2 Grown by Closed-Space Sublimation

Cited by 8 publications

References 19 publications

Theoretical Design of the Absorber for Intermediate Band Solar Cells from Group‐IV (Si, Ge, and Sn)‐Doped AgAlSe2

Theoretical Design of the Absorber for Intermediate Band Solar Cells from Group‐IV (Si, Ge, and Sn)‐Doped AgAlSe2

Crystallographic and optical characterizations of Ag(Ga,Al)Te2 layers grown on c ‐plane sapphire substrates by closed space sublimation

Structural and electric properties of AgGaTe2 layers prepared using mixed source of Ag2Te and Ga2Te3

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Theoretical Design of the Absorber for Intermediate Band Solar Cells from Group‐IV (Si, Ge, and Sn)‐Doped AgAlSe₂

Theoretical Design of the Absorber for Intermediate Band Solar Cells from Group‐IV (Si, Ge, and Sn)‐Doped AgAlSe₂

Crystallographic and optical characterizations of Ag(Ga,Al)Te₂ layers grown on c ‐plane sapphire substrates by closed space sublimation

Structural and electric properties of AgGaTe₂ layers prepared using mixed source of Ag₂Te and Ga₂Te₃