1979
DOI: 10.1063/1.90936
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Crystallographic orientation of silicon on an amorphous substrate using an artificial surface-relief grating and laser crystallization

Abstract: Uniform crystallographic orientation of silicon films, 500 nm thick, has been achieved on amorphous fused-silica substrates by laser crystallization of amorphous silicon deposited over surface-relief gratings etched into the substrates. The gratings had a square-wave cross section with a 3.8-μm spatial period and a 100-nm depth. The 〈100〉 directions in the silicon were parallel to the grating and perpendicular to the substrate plane. We propose that orientation of overlayer films induced by artificial surface … Show more

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Cited by 244 publications
(40 citation statements)
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“…The difficulty in growing epitaxial films on glass arises from the lack of atomic regularity on amorphous glass surfaces. Therefore, surface modification, such as the deposition of a Langmuir-Blodgett film, [8] fabrication of regulated grooves (graphoepitaxy), [9] and epitaxial lift-off and pasting of compound semiconductors such as GaAs, [10,11] is used to impart regularity to amorphous glass surfaces. Our approach to introducing atomic regularity to a glass surface involves the direct peeling-off and pasting of layered oxide epitaxial films in water.…”
mentioning
confidence: 99%
“…The difficulty in growing epitaxial films on glass arises from the lack of atomic regularity on amorphous glass surfaces. Therefore, surface modification, such as the deposition of a Langmuir-Blodgett film, [8] fabrication of regulated grooves (graphoepitaxy), [9] and epitaxial lift-off and pasting of compound semiconductors such as GaAs, [10,11] is used to impart regularity to amorphous glass surfaces. Our approach to introducing atomic regularity to a glass surface involves the direct peeling-off and pasting of layered oxide epitaxial films in water.…”
mentioning
confidence: 99%
“…Graphoepitaxy, in-plane-oriented thin film growth on artificial microstructures, was discovered in the 1970s in some inorganic materials. [5][6][7][8] In 2006, about thirty years later than extensive studies of graphoepitaxy in inorganic and metallic materials fields, we first reported "organic" graphoepitaxy observed using α-sexithiophene (6T; C 24 H 14 S 6 ). 9) In the experiments, periodic microgrooves were fabricated on thermally oxidized silicon substrates by electron beam lithography and dry etching, and 6T thin films were grown on the substrates by molecular beam deposition.…”
Section: Introductionmentioning
confidence: 99%
“…Oriented crystal growth can be induced by using an amorphous substrate with relief features [11][12][13]. This technique is known as graphoepitaxy and has been applied to many inorganic and organic materials [14][15][16][17][18].…”
Section: Introductionmentioning
confidence: 99%