Crystallographically Textured Nanomaterials Produced from the Liquid Phase Sintering of BixSb2–xTe3 Nanocrystal Building Blocks

Liu, Yu; Ortega, Silvia; Ibáñez, María; Lim, Khak Ho; Grau‐Carbonell, Albert; Martí‐Sánchez, Sara; Ng, Ka Ming; Arbiol, Jordi; Kovalenko, Maksym V.; Cadavid, Doris; Cabot, Andreu

doi:10.1021/acs.nanolett.8b00263

Cited by 99 publications

(107 citation statements)

References 37 publications

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“…The room‐temperature electrical conductivity of the BST:T film is 42% higher than that of the BST film. It is believed that the tellurium addition results in: I) diminished carrier scattering due to improved interfacial connections between BST particles, and II) an increased carrier (hole) concentration consistent with previous reports, which is closely related to the modulation of antisites (Sb Te‐ and Bi Te‐ ) and anion vacancy (V Te 2+ ) defects in the BST matrix . In order to confirm the change of carrier concentration and mobility, room‐temperature Hall measurements were performed on a series of flexible films.…”

Section: Resultssupporting

confidence: 78%

Flexible Thermoelectric Devices of Ultrahigh Power Factor by Scalable Printing and Interface Engineering

Varghese

Dun

Kempf

et al. 2019

Adv Funct Materials

127

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Printing is a versatile method to transform semiconducting nanoparticle inks into functional and flexible devices. In particular, thermoelectric nanoparticles are attractive building blocks to fabricate flexible devices for energy harvesting and cooling applications. However, the performance of printed devices are plagued by poor interfacial connections between nanoparticles and resulting low carrier mobility. While many rigid bulk materials have shown a thermoelectric figure of merit ZT greater than unity, it is an exacting challenge to develop flexible materials with ZT near unity. Here, a scalable screen-printing method to fabricate high-performance and flexible thermoelectric devices is reported. A tellurium-based nanosolder approach is employed to bridge the interfaces between the BiSbTe particles during the postprinting sintering process. The printed BiSbTe flexible films demonstrate an ultrahigh room-temperature power factor of 3 mW m −1 K −2 and ZT about 1, significantly higher than the best reported values for flexible films. A fully printed thermoelectric generator produces a high power density of 18.8 mW cm −2 achievable with a small temperature gradient of 80 °C. This screen-printing method, which directly transforms thermoelectric nanoparticles into high-performance and flexible devices, presents a significant leap to make thermoelectrics a commercially viable technology for a broad range of energy harvesting and cooling applications.

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Section: Resultssupporting

confidence: 78%

Flexible Thermoelectric Devices of Ultrahigh Power Factor by Scalable Printing and Interface Engineering

Varghese

Dun

Kempf

et al. 2019

Adv Funct Materials

127

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“…[13] Much lower thermal conductivities were obtained crossplane than in-plane: k k /k ? [13] Much lower thermal conductivities were obtained crossplane than in-plane: k k /k ?…”

Section: Angewandte Chemiementioning

confidence: 97%

Tin Diselenide Molecular Precursor for Solution‐Processable Thermoelectric Materials

et al. 2018

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In the present work, we detail af ast and simple solution-based method to synthesize hexagonal SnSe 2 nanoplates (NPLs) and their use to produce crystallographically textured SnSe 2 nanomaterials.W ea lso demonstrate that the same strategy can be used to produce orthorhombic SnSe nanostructures and nanomaterials.N PLs are grown through as crew dislocation-driven mechanism. This mechanism typically results in pyramidal structures,b ut we demonstrate here that the growth from multiple dislocations results in flower-like structures.C rystallographically textured SnSe 2 bulk nanomaterials obtained from the hot pressing of these SnSe 2 structures displayhighly anisotropic charge and heat transport properties and thermoelectric (TE) figures of merit limited by relatively low electrical conductivities.T oimprove this parameter,SnSe 2 NPLs are blended here with metal nanoparticles.The electrical conductivities of the blends are significantly improved with respect to bare SnSe 2 NPLs,w hat translates into at hree-fold increase of the TE Figure of merit, reaching unprecedented ZT values up to 0.65.The use of molecular precursors to produce inorganic nanomaterials in the form of nanoparticles,t hin films, supported nanostructures or self-standing porous or dense nanomaterials is potentially advantageous in terms of reducing fabrication costs and improving performances.I nt his direction, the amine-dithiol system has been reported as av ersatile solvent to prepare molecular precursors from the dissolution at ambient conditions of metal chalcogenides, pure metals and metal oxides,a mong others. [1] Tw odimensional (2D) materials have attracted increasing attention in the past decade.T he structure of these materials is formed by atomically thin layers that display strong covalent in-plane bonding and weak layer-to-layer bonding. This type of structure results in extraordinary and at the same time highly anisotropic physical, electronic and optical properties.Inparticular, charge and heat transport properties are especially affected by the strong lattice asymmetry,a nd much higher thermal and electrical conductivities are measured in-plane than cross-plane.O wing to these highly anisotropic properties,t op roduce bulk 2D nanomaterials with aproper crystallographic texture is necessary to optimize their performance in most applications.H owever,t oc ontrol the crystallographic texture of materials produced by bottomup procedures and/or solution-based approaches is not straightforward.Ap articularly interesting 2D material family is that of metal chalcogenides,o wing to their good chemical stability and semiconducting characteristics.2 Dm etal chalcogenides are used in numerous applications in av ariety of fields, including energy conversion and storage, [2] flexible electronics [3] and medical diagnosis. [4] Among them, tin chalcogenides are especially interesting materials for energy conversion. [5] In particular,p -type SnSe single crystals have shown unprecedentedly high thermoelectric (TE) figures of merit:Z T= 2.6 at 92...

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“…At the materials level, the efficiency is constrained by a dimensionless figure of merit defined as zT = α 2 σT /(κ l + κ e ), where α, σ, κ l , κ e , and T are Seebeck coefficient, electrical conductivity, lattice thermal conductivity, electronic thermal conductivity, and temperature, respectively . (Bi,Sb) 2 Te 3 , PbTe, half‐Heuslers, GeTe, etc. showing high thermoelectric performance have long been investigated for further zT enhancement.…”

mentioning

confidence: 99%

Melt‐Centrifuged (Bi,Sb)₂Te₃: Engineering Microstructure toward High Thermoelectric Efficiency

et al. 2018

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Microstructure engineering is an effective strategy to reduce lattice thermal conductivity (κ ) and enhance the thermoelectric figure of merit (zT). Through a new process based on melt-centrifugation to squeeze out excess eutectic liquid, microstructure modulation is realized to manipulate the formation of dislocations and clean grain boundaries, resulting in a porous network with a platelet structure. In this way, phonon transport is strongly disrupted by a combination of porosity, pore surfaces/junctions, grain boundaries, and lattice dislocations. These collectively result in a ≈60% reduction of κ compared to zone melted ingot, while the charge carriers remain relatively mobile across the liquid-fused grains. This porous material displays a zT value of 1.2, which is higher than fully dense conventional zone melted ingots and hot pressed (Bi,Sb) Te alloys. A segmented leg of melt-centrifuged Bi Sb Te and Bi Sb Te could produce a high device ZT exceeding 1.0 over the whole temperature range of 323-523 K and an efficiency up to 9%. The present work demonstrates a method for synthesizing high-efficiency porous thermoelectric materials through an unconventional melt-centrifugation technique.

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Crystallographically Textured Nanomaterials Produced from the Liquid Phase Sintering of Bi_xSb_2–xTe₃ Nanocrystal Building Blocks

Cited by 99 publications

References 37 publications

Flexible Thermoelectric Devices of Ultrahigh Power Factor by Scalable Printing and Interface Engineering

Flexible Thermoelectric Devices of Ultrahigh Power Factor by Scalable Printing and Interface Engineering

Tin Diselenide Molecular Precursor for Solution‐Processable Thermoelectric Materials

Melt‐Centrifuged (Bi,Sb)₂Te₃: Engineering Microstructure toward High Thermoelectric Efficiency

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Crystallographically Textured Nanomaterials Produced from the Liquid Phase Sintering of BixSb2–xTe3 Nanocrystal Building Blocks

Cited by 99 publications

References 37 publications

Flexible Thermoelectric Devices of Ultrahigh Power Factor by Scalable Printing and Interface Engineering

Flexible Thermoelectric Devices of Ultrahigh Power Factor by Scalable Printing and Interface Engineering

Tin Diselenide Molecular Precursor for Solution‐Processable Thermoelectric Materials

Melt‐Centrifuged (Bi,Sb)2Te3: Engineering Microstructure toward High Thermoelectric Efficiency

Contact Info

Product

Resources

About

Crystallographically Textured Nanomaterials Produced from the Liquid Phase Sintering of Bi_xSb_2–xTe₃ Nanocrystal Building Blocks

Melt‐Centrifuged (Bi,Sb)₂Te₃: Engineering Microstructure toward High Thermoelectric Efficiency