Cs adsorption on Bi2Se3

Zhu, Haoshan; Zhou, Weimin; Yarmoff, J. A.

doi:10.1016/j.susc.2019.01.006

Cited by 9 publications

(4 citation statements)

References 53 publications

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“…The work function of Bi 2 Se 3 samples decreased from 5.4 to 4.0 eV after air exposure [32]. Other factors could also have reduced work function of the sample, such as adsorption of other elements (Cesium) [33].…”

Section: Resultsmentioning

confidence: 99%

Proximity-Induced Magnetism in a Topological Insulator/Half-Metallic Ferromagnetic Thin Film Heterostructure

Zhang

Liu

et al. 2022

Coatings

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Topological insulator (TI) Bi2Se3 thin films were prepared on half-metallic ferromagnetic La0.7Sr0.3MnO3 thin film by magnetron sputtering, forming a TI/FM heterostructure. The conductivity of Bi2Se3was modified by La0.7Sr0.3MnO3 at high- and low-temperature regions via different mechanisms, which could be explained by the short-range interactions and long-range interaction between ferromagnetic insulator and Bi2Se3 due to the proximity effect. Magnetic and transport measurements prove that the ferromagnetic phase and extra magnetic moment are induced in Bi2Se3 films. The weak anti-localized (WAL) effect was suppressed in Bi2Se3 films, accounting for the magnetism of La0.7Sr0.3MnO3 layers. This work clarifies the special behavior in Bi2Se3/La0.7Sr0.3MnO3 heterojunctions, which provides an effective way to study the magnetic proximity effect of the ferromagnetic phase in topological insulators.

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Section: Resultsmentioning

confidence: 99%

Proximity-Induced Magnetism in a Topological Insulator/Half-Metallic Ferromagnetic Thin Film Heterostructure

Zhang

Liu

et al. 2022

Coatings

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“…Investigations of the defects on the interlayer surface of Bi 2+x Te 2−x Se solid solutions were carried out by STM method in [27,28] that allowed to reveal on morphology images the antisite defects of tellurium and bismuth due to excess of Te or Bi in the solid solution, respectively. Adsorbed impurities on the surface of the topological insulators of Bi and Sb chalcogenides and their influence on the topologically protected surface states of Dirac fermions were studied by STM/STS methods in Bi 2 Te 3 : (Ca, Mn) [23], Bi 2 Te 3 : (Ca, Rb, NO 2 ) [29], Bi 2 Te 3 : Rb, In, Ga, Au [30], and by the low-energy ion scattering method in Bi 2 Se 3 : Cs [31]. Analysis of the electronic structure of Bi 2 Te 3 based on first principles calculations was carried out with account of adsorption of Rb, In, Ga, and Au atoms on (0001) surface.…”

Section: Introductionmentioning

confidence: 99%

STM and STS studies of topological n-type (Bi, In)₂(Te, Se, S)₃ thermoelectrics

Lukyanova¹,

Макаренко²,

Усов³

2020

J. Phys.: Condens. Matter

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In topological n-type thermoelectrics based on Bi 2 Te 3 with atomic substitutions Bi → In, Te → Se, S, the morphology and the surface states of Dirac fermions on the interlayer (0001) surface of van der Waals were studied by scanning tunneling microscopy and spectroscopy (STM/STS) techniques. By the STM method, the dark and light spots on the surface were found, which intensities depend on the composition and thermoelectric properties of solid solutions such as the Seebeck coefficient and thermoelectric power factor. The observed surface morphology features in the solid solutions are explained by distortions of surface electronic states originated from atomic substitutions, the influence of doping impurity, and formation mainly of substitutional impurity defects in thermoelectrics. The dips associated with substitutional impurities and antisite defects were found from the analysis of the height profiles obtained on the (0001) surface. Fast Fourier transform of the morphology STM images of the (0001) surface were used to obtain the interference patterns of the quasiparticles excitation caused by surface electrons scattering by defects. The Dirac point energy and its fluctuations, peak energies of surface defects, the positions of the valence and conduction band edges, and the energy gap were determined from an analysis of tunneling spectra. A correlation between the parameters of surface states of Dirac fermions and thermoelectric properties was found. Thus, a contribution of the fermions surface states increases with rise of the surface concentration in solid solutions with high power factor, and the largest concentration value was observed in the Bi 1.98 In 0.02 Te 2.85 Se 0.15 composition. The dependences of Fermi energy on the wave vector for different solid solutions are described by a set of Dirac cone sections located within the limits of the fluctuations of the Dirac point energy that explained by weak changes of the Fermi velocity for studied atomic substitutions in sublattices of bismuth telluride.

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“…ТИ Bi 2 Se 3 исследованы во многих аспектах как теоретически, так и экспериментально [3,4]. Модификация электронной структуры ТИ при адсорбции атомов металлов исследовалась в работах [5][6][7][8][9]. В [5]…”

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Электронная структура ультратонких интерфейсов Cs/Bi-=SUB=-2-=/SUB=-Se-=SUB=-3-=/SUB=-

Бенеманская¹,

Тимошнев²

2022

Письма В Журнал Технической Физики

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The electronic structure of ultrathin Cs/Bi2Se3 interfaces has been studied by photoelectron spectroscopy using synchrotron radiation. The experiments were carried out in situ in an ultrahigh vacuum with submonolayer Cs coverages on Bi2Se3 samples. It was found that the adsorption of Cs causes changes in the spectra of the core levels of Bi 4f, Bi 5d, and Se 3d. It has been established that Cs atoms are adsorbed predominantly on Bi atoms in the upper surface layer. The states of the valence band are studied for a clean Bi2Se3 surface and for the Cs/Bi2Se3 interface. Near the Fermi level, 2D topological states have been found. Two induced surface states appear in the region of the valence band upon adsorption of Cs.

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Cs adsorption on Bi2Se3

Cited by 9 publications

References 53 publications

Proximity-Induced Magnetism in a Topological Insulator/Half-Metallic Ferromagnetic Thin Film Heterostructure

Proximity-Induced Magnetism in a Topological Insulator/Half-Metallic Ferromagnetic Thin Film Heterostructure

STM and STS studies of topological n-type (Bi, In)₂(Te, Se, S)₃ thermoelectrics

Электронная структура ультратонких интерфейсов Cs/Bi-=SUB=-2-=/SUB=-Se-=SUB=-3-=/SUB=-

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Cs adsorption on Bi2Se3

Cited by 9 publications

References 53 publications

Proximity-Induced Magnetism in a Topological Insulator/Half-Metallic Ferromagnetic Thin Film Heterostructure

Proximity-Induced Magnetism in a Topological Insulator/Half-Metallic Ferromagnetic Thin Film Heterostructure

STM and STS studies of topological n-type (Bi, In)2(Te, Se, S)3 thermoelectrics

Электронная структура ультратонких интерфейсов Cs/Bi-=SUB=-2-=/SUB=-Se-=SUB=-3-=/SUB=-

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STM and STS studies of topological n-type (Bi, In)₂(Te, Se, S)₃ thermoelectrics