Cu filling of TSV using various current forms for three‐dimensional packaging application

Abstract

If you would like to write for this, or any other Emerald publication, then please use our Emerald for Authors service information about how to choose which publication to write for and submission guidelines are available for all. Please visit www.emeraldinsight.com/authors for more information. About Emerald www.emeraldinsight.comEmerald is a global publisher linking research and practice to the benefit of society. The company manages a portfolio of more than 290 journals and over 2,350 books and book series volumes, as well as providing an extensive range of online products and additional customer resources and services.Emerald is both COUNTER 4 and TRANSFER compliant. The organization is a partner of the Committee on Publication Ethics (COPE) and also works with Portico and the LOCKSS initiative for digital archive preservation. AbstractPurpose -The purpose of this paper is to overview the effect of electroplating current wave forms on Cu filling of through-silicon-vias (TSV) for threedimensional (3D) packaging. Design/methodology/approach -The paper takes the form of a literature review. Findings -Effective TSV technology for 3D packaging involves various processes such as via formation, filling with conductive material, wafer thinning, and chip stacking. Among these processes, high-speed via filling without defect is very important for applying the TSV process to industry with a lower production cost. In this paper, the effects of various current forms on Cu electroplating of TSV such as direct current (DC), pulse current (PC), pulse reverse current (PRC), and periodic pulse reverse current (PPR) are described in detail including recent studies. Originality/value -TSV is a core technology for high density 3D packaging. This paper overviews the recent studies of various current forms on Cu-filling of TSV.

Fabrication and Optimization of High Aspect Ratio Through-Silicon-Vias Electroplating for 3D Inductor

“…After vacuum pretreatment, the anode copper sheet and cathode silicon wafer with seed layer were connected to the positive and negative poles of the pulse power. Since pulse current produces a better electroplating effect than direct current (DC) [ 23 ], we adopted pulse current as the electroplating current source. The time proportion of the positive current to negative current to empty was 60:10:60 ms (6:1:6).…”

Dynamic through-silicon-via filling process using copper electrochemical deposition at different current densities

“…Through-silicon-via (TSV) is a promising three-dimensional (3D) packaging technology due to its advantages of high performance, reduction in packaging volume, low power consumption, and multi-functionality 1 2 3 4 . During the TSV process, the via filling step—which is commonly performed using copper electrochemical deposition (ECD)—accounts for almost 40% of the total cost 5 .…”

The key role of suppressor diffusion in defect-free filling of the through-silicon-via with high depth

“…With the increasing demand of high density and light weight manufacturing, the through-silicon-via (TSV), as a promising three-dimensional (3D) packaging technology, has been widely studied due to its advantages in high performance, reduction in packaging volume, low power consumption, and multi-functionality [1][2][3][4]. Among the TSV manufacturing process, the via filling, commonly using copper electrochemical deposition method, occupies almost 40% of the total cost [5].…”