Cu(In,Ga)(S,Se)2 solar cells and modules by electrodeposition

Taunier, S.; Sicx-Kurdi, J.; Grand, P.; Chomont, A.; Ramdani, O.; Parissi, L.; Panheleux, P.; Naghavi, Negar; Hubert, Cédric; Benfarah, M.; Fauvarque, J.P.; Connolly, J.P.; Roussel, O.; Mogensen, Paul C.; Mahé, Éric; Guillemoles, Jean‐François; Lincot, Daniel; Kerrec, O.

doi:10.1016/j.tsf.2004.11.200

Cited by 103 publications

(62 citation statements)

References 11 publications

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“…However, deposition of CIGS contains multiple elements including a chalcogen making the ED process substantially complex. Despite that electrochemical deposition appears to be a promising technique for the low-cost solution preparation of CIGS semiconductors [25][26][27]. Indeed, electrochemical deposition has been widely investigated for CIGS deposition since the pioneering work by Bhattacharya et al…”

Section: Electrodeposition Of Ternary/quaternary Chalcopyritesmentioning

confidence: 99%

Pulsed Electrochemical Deposition of CuInSe2 and Cu(In,Ga)Se2 Semiconductor Thin Films

Mandati¹,

Sarada²,

Dey³

et al. 2018

Semiconductors - Growth and Characterization

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CuInSe 2 (CIS) and Cu(In,Ga)Se 2 (CIGS) semiconductors are the most studied absorber materials for thin films solar cells due to their direct bandgap and large absorption coefficient. The highly efficient CIGS devices are often fabricated using expensive vacuum based technologies; however, recently electrodeposition has been demonstrated to produce CIGS devices with high efficiencies and it is easily amenable for large area films of high quality with effective material use and high deposition rate. In this context, this chapter discusses the recent developments in CIS and CIGS technologies using electrodeposition. In addition, the fundamental features of electrodeposition such as direct current, pulse and pulse-reverse plating and their application in the fabrication of CIS and CIGS films are discussed. In conclusion, the chapter summarizes the utilization of pulse electrodeposition for fabrication of CIS and CIGS films while making a recommendation for exploring the group's unique pulse electroplating method.

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Section: Electrodeposition Of Ternary/quaternary Chalcopyritesmentioning

confidence: 99%

Pulsed Electrochemical Deposition of CuInSe2 and Cu(In,Ga)Se2 Semiconductor Thin Films

Mandati¹,

Sarada²,

Dey³

et al. 2018

Semiconductors - Growth and Characterization

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“…Nevertheless, the vacuum equipment that is currently used for state of art technology requires large capital investments. This is the reason why low-cost methods for chalcopyrite films deposition have been extensively studied [4][5][6]. So far, nanoparticle precursors have been one of the most successful alternative routes [7].…”

Section: Introductionmentioning

confidence: 99%

Influence of treatment conditions on chalcopyrite films deposited at atmospheric pressure

Todorov

Oliveira

Carda

et al. 2008

Phys. Status Solidi (c)

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Spin‐coating technique was used to deposit precursor layers for chalcopyrite films of the series CuInX2 and Cu(In,Ga)X2 where X = S or Se or (S,Se). The influence of different parameters of the process, such as solution composition, air pre‐treatment and chalcogenation treatment is discussed with respect to film applicability in photovoltaic devices. Layer morphology, stochiometry and crystalline structure varied widely with the different compositions and treatments. Highly oriented CuInSe2 and Cu(In,Ga)Se2 films were obtained. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…As an economical alternative to ultrahigh vacuum-based deposition methods, electrodeposition is showing promise for preparing thin film materials and devices for photovoltaic applications [2,3]. A key to implementing electrodeposition in these technologies is the ability to control the defects and dopants that affect a material's optical response.…”

Section: Introductionmentioning

confidence: 99%

Optical absorption edge shifts in electrodeposited ZnO thin films

2007

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Electrodeposited wurtzite ZnO thin films exhibit shifts in their optical absorption edges with changes in thickness (0.2 -2 µm), deposition potential (-0.80 V to -1.50 V), and aging time (days to months under ambient conditions). Increases in absorption edge energy are consistent with H + incorporation as a shallow donor (BursteinMoss effect) due to deposition in the presence of electrochemically evolved hydrogen. Diffuse reflectance spectroscopic data and Raman spectroscopic data show both potential-and thickness-dependent changes in defect levels and absorption edges, which suggests that H + can be trapped in secondary defects. Such defects also increase the diffusion time for H + and lead to the observed decay in absorption edge energy with aging.

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Cu(In,Ga)(S,Se)2 solar cells and modules by electrodeposition

Cited by 103 publications

References 11 publications

Pulsed Electrochemical Deposition of CuInSe2 and Cu(In,Ga)Se2 Semiconductor Thin Films

Pulsed Electrochemical Deposition of CuInSe2 and Cu(In,Ga)Se2 Semiconductor Thin Films

Influence of treatment conditions on chalcopyrite films deposited at atmospheric pressure

Optical absorption edge shifts in electrodeposited ZnO thin films

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