Cu(In, Ga)Se 2 thin film solar cells grown at low temperatures

Zhang, W.; Zhu, Hongbing; Zhang, Lihai; Guo, Yuting; Niu, Xiaofei; Li, Z.; Chen, J.; Liu, Q.; Mai, Yaohua

doi:10.1016/j.sse.2017.03.003

Cited by 6 publications

(7 citation statements)

References 24 publications

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“…Figure 7(a) represents the efficiency of the cell as a function of SnS thickness. To consider the worst condition, the trap densities for SnS and CIGS are assumed as 10 19 cm −3 and 5.6 × 10 15 cm −3 , respectively, according to the maximum value reported in previous studies (Zhang et al , 2017; Septina et al , 2015, Varley et al , 2016). As shown in Figure 7(a), the efficiency of solar cell would experience a reduction as the thickness of SnS increases.…”

Section: Resultsmentioning

confidence: 99%

“…All simulations are carried out under standard illumination (a.m.1.5G, 100 mW/cm 2 ) at 300 K (Movla, 2014). In this research, to obtain valid and useful results we used previously reported experimental information from other research groups as possible and accessible (Zhang et al , 2017).…”

Section: Theory and Simulation Methodsmentioning

confidence: 99%

“…Absorbing layers with various bandgap structures and thicknesses are devised over the molybdenum layer. To enhance the efficiency of CIGS solar cell, some researchers proposed adding a second absorbing layer with a distinct bandgap structure and thickness (Benabbas et al , 2014; Zhang et al , 2017). The bandgap of the second absorbing layer can be constant or graded [9,10].…”

Section: Device Structure and Materialsmentioning

confidence: 99%

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Highly improvement in efficiency of Cu(In,Ga)Se₂ thin film solar cells

Sajadnia

Dehghani

Noraeepoor

et al. 2020

WJE

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Purpose The purpose of this study is to design and optimize copper indium gallium selenide (CIGS) thin film solar cells. Design/methodology/approach A novel bi-layer CIGS thin film solar cell based on SnS is designed. To improve the performance of the CIGS based thin film solar cell a tin sulfide (SnS) layer is added to the structure, as back surface field and second absorbing layer. Defect recombination centers have a significant effect on the performance of CIGS solar cells by changing recombination rate and charge density. Therefore, performance of the proposed structure is investigated in two stages successively, considering typical and maximum reported trap density for both CIGS and SnS. To achieve valid results, the authors use previously reported experimental parameters in the simulations. Findings First by considering the typical reported trap density for both SnS and CIGS, high efficiency of 36%, was obtained. Afterward maximum reported trap densities of 1 × 1019 and 5.6 × 1015 cm−3 were considered for SnS and CIGS, respectively. The efficiency of the optimized cell is 27.17% which is achieved in CIGS and SnS thicknesses of cell are 0.3 and 0.1 µm, respectively. Therefore, even in this case, the obtained efficiency is well greater than previous structures while the absorbing layer thickness is low. Originality/value Having results similar to practical CIGS solar cells, the impact of the defects of SnS and CIGS layers was investigated. It was found that affixing SnS between CIGS and Mo layers causes a significant improvement in the efficiency of CIGS thin-film solar cell.

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Section: Resultsmentioning

confidence: 99%

Section: Theory and Simulation Methodsmentioning

confidence: 99%

Section: Device Structure and Materialsmentioning

confidence: 99%

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Highly improvement in efficiency of Cu(In,Ga)Se₂ thin film solar cells

Sajadnia

Dehghani

Noraeepoor

et al. 2020

WJE

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“…A lab-sized CIGS solar cell with a structure of substrate (SLG)/molybdenum (Mo)/CIGS absorber/CdS/intrinsic zinc oxide (i-ZnO)/n-type aluminum doped ZnO (n-ZnO:Al)/Al grid was used in this study, in which the CIGS absorber layer was synthesized via a three-stage co-evaporation method, the details of the fabrication process and facility can be found in [31]- [37]. The total area of the cell sample is 0.75 cm×0.7 cm, with short-circuit current density (J sc ) of 29.8 mA/cm 2 , opencircuit voltage (V oc ) of 0.683 V, fill factor of 0.495, and energy conversion efficiency (η) of 10.1% measured under AM1.5G, 1-sun illumination condition using a solar simulator at room temperature.…”

Section: Experimental and Modelingmentioning

confidence: 99%

Resistive Effects on the Spatially Resolved Absolute Electroluminescence of Thin-Film Cu(In, Ga)Se₂ Solar Cells Studied by a Distributed Two-Diode Model

et al. 2020

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Electroluminescence (EL) images with absolute photon emissions from Cu(In, Ga)Se 2 (CIGS) solar cells were obtained under different forward current injections, with the spatially distributed EL emission becoming non-uniform as the current density gradually increases. A distributed two-diode electrical three-dimensional model was established which simulated the dark current density-voltage curves and the absolute EL images of the CIGS solar cells very well. Then, the resistive effects were analyzed using this model and simulation results show that the sheet resistance of the transparent conductive oxide (TCO) layer dominates the non-uniform distribution of the EL emission in the studied CIGS thin-film solar cells. The effect of the sheet resistance of the TCO and the series resistance of the micro-diode on the EL variations is found to become obvious under high-current-injection conditions, whereas the effect of shunt resistance of the micro-diode on the EL variations becomes more obvious under low-resistance value or low-current-injection conditions.

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“…Meanwhile, Ramanathan et al have proved that thinner absorber layers can give rise to a higher reverse saturation current density ( J 0 ), indicating an increased recombination rate . Without the assistance of liquid Cu 2‐x Se, the polycrystalline grains are smaller in the CIGS solar cells prepared by low‐temperature processes, leading to the recombination in the CIGS absorber as well as at the rear interface . Consequently, recombination should be restrained when we prepare submicron CIGS solar cells by low temperature processes.…”

Section: Introductionmentioning

confidence: 99%

Low‐Temperature Growth of Submicron Cu(In, Ga)Se₂ Solar Cells Based on Molybdenum Oxide Back Interface Layer

Liu

Lin

Liu

et al. 2018

Physica Status Solidi (a)

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Cu(In,Ga)Se 2 (CIGS) thin film solar cells are proven to be highly efficiency. However, lowering the substrate temperature and reducing absorber layer thickness can lead to severe light and electric losses. In this work, the authors employ molybdenum oxide acting as back interface layer in order to decrease the recombination at the rear interface in low-temperature growth of submicron CIGS solar cells. X-ray photoelectron spectroscopy (XPS) results show that the compositions of molybdenum oxide films are mainly MoO x (2 < x < 3) under the influence of metal molybdenum substrate and CIGS absorber. Meanwhile, the authors study the properties of CIGS devices with different MoO x thicknesses. They find that MoO x with appropriate thickness can facilitate the crystallization of CIGS absorber layer and restrain the recombination in the CIGS bulk as well as at the back interface. Finally a CIGS solar cell with active area efficiency of 11.8% is fabricated by lowtemperature processes below 450 C when the thicknesses of absorber layer and molybdenum oxide are 0.92 and 10 nm, respectively. Compared with the reference device, absolute increase about 40 mV and 13% for V oc and FF are achieved.

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Cu(In, Ga)Se 2 thin film solar cells grown at low temperatures

Cited by 6 publications

References 24 publications

Highly improvement in efficiency of Cu(In,Ga)Se₂ thin film solar cells

Highly improvement in efficiency of Cu(In,Ga)Se₂ thin film solar cells

Resistive Effects on the Spatially Resolved Absolute Electroluminescence of Thin-Film Cu(In, Ga)Se₂ Solar Cells Studied by a Distributed Two-Diode Model

Low‐Temperature Growth of Submicron Cu(In, Ga)Se₂ Solar Cells Based on Molybdenum Oxide Back Interface Layer

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Cu(In, Ga)Se 2 thin film solar cells grown at low temperatures

Cited by 6 publications

References 24 publications

Highly improvement in efficiency of Cu(In,Ga)Se2 thin film solar cells

Highly improvement in efficiency of Cu(In,Ga)Se2 thin film solar cells

Resistive Effects on the Spatially Resolved Absolute Electroluminescence of Thin-Film Cu(In, Ga)Se2 Solar Cells Studied by a Distributed Two-Diode Model

Low‐Temperature Growth of Submicron Cu(In, Ga)Se2 Solar Cells Based on Molybdenum Oxide Back Interface Layer

Contact Info

Product

Resources

About

Highly improvement in efficiency of Cu(In,Ga)Se₂ thin film solar cells

Highly improvement in efficiency of Cu(In,Ga)Se₂ thin film solar cells

Resistive Effects on the Spatially Resolved Absolute Electroluminescence of Thin-Film Cu(In, Ga)Se₂ Solar Cells Studied by a Distributed Two-Diode Model

Low‐Temperature Growth of Submicron Cu(In, Ga)Se₂ Solar Cells Based on Molybdenum Oxide Back Interface Layer