Inverted perovskite solar cells (i-PSCs) manifest negligible hysteresis and potential to construct tandem solar cells attracting much attention, but their power conversion efficiency (PCE) still lags behind conventional ones due...

In this paper, we demonstrate numerical evidence that interfacial passivation in the Sb 2 Se 3 solar cell forming the configuration of indium tin oxide (ITO)/SnO 2 /CdS/Sb 2 Se 3 /Au is beneficial for suppressing defects and obtaining cells with high efficiency. First, the effects of two types of defects including bulk defects in the Sb 2 Se 3 absorber layer and interfacial defects at the CdS/Sb 2 Se 3 interface on the performance of solar cells are studied, respectively. It is found that the effect of the bulk defects varied greatly in different magnitudes of defect density, whereas significant deterioration could be caused by the interfacial defect at relatively lower defect density. Then, the types of three actual defects named D1, D2, and D3 measured experimentally in the Sb 2 Se 3 solar cells are analyzed by comparing the simulation and experimental results. It is found that the case D1 and D2 existing in the absorber layer while D3 located at the interface makes the simulation and experimental results the most consistent, in which the interfacial defect D3 contributes the most to the degradation of cell performance. Finally, a SnO 2 -free Sb 2 Se 3 solar cell sample is simulated to evaluate the crucial interfacial passivation effect of the SnO 2 layer. The results show that introducing a SnO 2 layer is beneficial for the passivation of not only the interfacial defects but some unclear mechanisms such as deep-level defects which are hard to be measured in the present experiment. The numerical simulation results provide evidence proving the importance of interfacial passivation in actual fabrication processes to improve the performance of Sb 2 Se 3 solar cells.

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Antimony selenide ( Sb 2 Se 3 ) is an emerging material with potential applications in photovoltaics, while magnetron sputtering is an important method in material growth. In this study, Sb 2 Se 3 thin films, prepared by the magnetron sputtering technique with varied working pressures and sputtering powers, were fabricated into solar cells with a structure of glass / ITO / CdS / Sb 2 Se 3 / Au . The current density versus voltage measurements and x-ray diffraction were introduced to compare the photovoltaic and structural properties of the cell samples. Characterization and identification of the defects in Sb 2 Se 3 thin films were investigated by admittance measurements. The Sb 2 Se 3 cell samples prepared with appropriate sputtering power (about 60 W) or working pressure (about 0.4 Pa) were found to own better crystal qualities and lower defect densities, which may be the reason for better efficiency.