2023
DOI: 10.1007/s10854-022-09441-w
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Cu-rich copper indium sulfide thin films deposited by co-evaporation for photovoltaic applications

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Cited by 4 publications
(2 citation statements)
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“…giving the gap wavelength λg = 560 nm for CuGaS2, λg = 870 nm for CuInS2 and λg = 1220 nm for CuInSe2, in good agreement with the literature, which establishes direct transitions for chalcopyrite compounds [25,27,28]. The presence of some absorption at λ > λg (or E < Eg) is due to tail states that are also typical of chalcopyrite materials [29].…”
Section: Resultssupporting
confidence: 88%
“…giving the gap wavelength λg = 560 nm for CuGaS2, λg = 870 nm for CuInS2 and λg = 1220 nm for CuInSe2, in good agreement with the literature, which establishes direct transitions for chalcopyrite compounds [25,27,28]. The presence of some absorption at λ > λg (or E < Eg) is due to tail states that are also typical of chalcopyrite materials [29].…”
Section: Resultssupporting
confidence: 88%
“…Therefore, substituting the anion Se by S is expected to change both VBM and CBM in CuInS 2 with respect to CuInSe 2 , but substituting In by Ga changes only the CBM but not the VBM in CuGaS 2 with respect to CuInS 2 . The forbidden bandwidth is the energy difference between CBM and VBM, which is observed at 1.02 eV for CuInSe 2 [32], and higher for CuInS 2 and CuGaS 2 according to the literature [33][34].…”
Section: Resultsmentioning
confidence: 87%