Cu<sub>2</sub>SnS<sub>3</sub>Thin-Film Solar Cells from Electroplated Precursors

Koike, Junpei; Chino, Kotaro; Aihara, Naoya; Araki, Hideki; Nakamura, Ryota; Jimbo, Kazuo; Katagiri, Hironori

doi:10.7567/jjap.51.10nc34

Cited by 89 publications

(31 citation statements)

References 14 publications

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“…Furthermore, alloying with Si or Ge on the Sn site can serve to increase the band gap. Research has demonstrated that Cu 2 SnS 3 can be synthesized by several potentially scalable techniques such as sputtering and solution processing [5,9,10].…”

Section: Introductionmentioning

confidence: 99%

Effects of Disorder on Carrier Transport inCu2SnS3

et al. 2015

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In recent years, further improvements in the efficiency of Cu2ZnSn(S,Se)4 photovoltaic devices have been hampered due to several materials issues, including cation disorder. Cu2SnS3 is a promising new absorber material that has attracted significant interest in recent years. However, similar to CZTS, Cu2SnS3 displays cation disorder. In this work, we develop synthetic techniques to control the disorder in Cu2SnS3 thin films. By manipulating the disorder in this material, we observe crystal structure changes and detect improvements in the majority carrier (hole) transport. However, when the minority carrier (electron) transport was investigated using optical pump terahertz probe spectroscopy, minimal differences were observed between the ordered and disordered Cu2SnS3. By combining these results with first-principles and Monte Carlo theoretical calculations, we are able to conclude that even ostensibly "ordered" Cu2SnS3 displays minority carrier transport properties corresponding to the disordered structure. The presence of extended planar defects in all samples, observed in TEM imaging, suggests that disorder is present even when it is not detectable using traditional structural characterization methods. The results of this study highlight some of the challenges to the further improvement of Cu2SnS3-based photovoltaics, and have implications for other disordered multinary semiconductors such as CZTS.

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Section: Introductionmentioning

confidence: 99%

Effects of Disorder on Carrier Transport inCu2SnS3

et al. 2015

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“…[1][2][3][4][5][6][7][8][9][10] Recently, the photovoltaic cells based on the CTGS absorbers exhibited a power conversion efficiency over 6%, which is an impressive achievement. 10) By optimizing the characteristic of CTGS absorbers as well as device structure, efficiency over 25% is expectable in the future according to the detailed balance theory.…”

Section: Introductionmentioning

confidence: 99%

“…11) However, the study of CTGS compound is still immature and reports concerning to this compound are relatively few compared to the well-developed absorber materials such as Si, GaAs, Cu(In,Ga)Se 2 , CdTe, and Cu 2 ZnSn(S,Se) 4 . [1][2][3][4][5][6][7][8][9][10][12][13][14][15][16][17] Besides, formation of different crystal phases as well as unintended secondary phases is one of the major problems for this material system due to its multinary elemental composition. [18][19][20][21][22][23][24][25][26][27][28] Hence, it is important to explore the material properties relating to its impurity phases as well as fabrication techniques of CTGS multinary compound by various theoretical and experimental approaches in order to improve its characteristics.…”

Section: Introductionmentioning

confidence: 99%

Temperature-dependent Raman spectroscopy of Cu₂Sn₁₋ _x Ge _x S₃ thin films

Okamura

Htay

Yamaguchi

et al. 2018

Jpn. J. Appl. Phys.

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Analysis on the temperature-dependent Raman spectra measured between 27–450 °C range in relation to various Ge compositional ratios of Cu2Sn1−xGexS3 thin-film alloys, which were prepared by closed-tube sulfurization technique, was carried out in detail. By XRD and Raman analyses, linear transformation of the lattice parameters for Cu2Sn1−xGexS3 thin-film alloys with respect to the Ge composition was confirmed to be obeying the Vegard’s law. By AC Hall effect measurement, reducing of carrier mobility was observed in the Cu2Sn1−xGexS3 thin-film alloys with higher Ge content. By the temperature dependent Raman spectroscopy analysis, it is observed that the red shifting of Raman vibration energy due to the thermal expansion is resembled to that of the temperature dependency of energy bandgap of semiconductors. Anisotropic thermal dilatation behavior was observed in the Cu2Sn1−xGexS3 thin-film alloy independent of its Ge composition.

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“…Of these, Cu 2 SnS 3 (CTS) with a reported band gap of *0.90-1.35 eV, high optical absorption coefficient ðaÞ [ 10 4 cm À1 , p-type electrical conductivity [5][6][7][8] is an attractive option. CTS solar cells and the cells based on CTS alloyed with Ge have been reported with an efficiency of 2-3 and 6 % respectively [9][10][11][12][13]. But these efficiencies are quite low.…”

Section: Introductionmentioning

confidence: 99%

Growth of Cu2SnS3 thin films by a two-stage process: structural, microstructural and optical properties

Jayasree

Chalapathi

Raja

2015

J Mater Sci: Mater Electron

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Copper tin sulfide (Cu 2 SnS 3 ) thin films were grown by a two-stage process of sequential deposition of precursor layers CuS and SnS by chemical bath deposition technique followed by annealing in sulfur atmosphere. Two stacks of SnS-CuS thin films were prepared in which SnS thickness alone was varied keeping CuS film thickness fixed in an attempt to optimize SnS layer thickness to obtain Cu 2 SnS 3 (CTS). The annealed films were characterized by studying their structural, microstructural and optical properties. X-ray diffraction analysis of the films obtained by annealing stack S-I revealed that they are multi-phase containing Cu 2 SnS 3 and the secondary phases, Sn 2 Sn 3 and Snrich CTS phase Cu 2 Sn 3 S 7 . Films obtained on annealing stack S-II resulted in monoclinic CTS phase with minor Cu 2 Sn 3 S 7 , tetragonal/cubic CTS phases. The direct optical band gap of monoclinic CTS phase is found to be 0.82 eV.

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Cu₂SnS₃Thin-Film Solar Cells from Electroplated Precursors

Cited by 89 publications

References 14 publications

Effects of Disorder on Carrier Transport inCu2SnS3

Effects of Disorder on Carrier Transport inCu2SnS3

Temperature-dependent Raman spectroscopy of Cu₂Sn₁₋ _x Ge _x S₃ thin films

Growth of Cu2SnS3 thin films by a two-stage process: structural, microstructural and optical properties

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Cu2SnS3Thin-Film Solar Cells from Electroplated Precursors

Cited by 89 publications

References 14 publications

Effects of Disorder on Carrier Transport inCu2SnS3

Effects of Disorder on Carrier Transport inCu2SnS3

Temperature-dependent Raman spectroscopy of Cu2Sn1− x Ge x S3 thin films

Growth of Cu2SnS3 thin films by a two-stage process: structural, microstructural and optical properties

Contact Info

Product

Resources

About

Cu₂SnS₃Thin-Film Solar Cells from Electroplated Precursors

Temperature-dependent Raman spectroscopy of Cu₂Sn₁₋ _x Ge _x S₃ thin films