Cu2ZnSnS4 formation by co-evaporation and subsequent annealing in S-flux using molecular beam epitaxy system

Shimamune, Yosuke; Jimbo, Kazuo; Nishida, Genki; Murayama, Masanari; Takeuchi, Akiko; Katagiri, Hironori

doi:10.1016/j.tsf.2017.08.002

Cited by 11 publications

(11 citation statements)

References 17 publications

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“…The latest efficiency records with CZTS (Se) absorbers reach 12.6% [9]. In experimental studies, various procedures have been applied for CZTS thin film fabrication using different methods of deposition techniques such as: sol-gel [10,11], electroplating [12,13], spray pyrolysis [14], pulsed laser deposition [15,16], co-evaporation [17] etc. In addition, there are also some reports on theoretical studies of CZTS which have presented a reasonable understanding of the stable Kesterite crystalline and electronic structures of CZTS [18,19].…”

Section: Introductionmentioning

confidence: 99%

Strain effects on the electronic, optical and electrical properties of Cu2ZnSnS4: DFT study

Kahlaoui

Belhorma

Labrim

et al. 2020

Heliyon

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Based on the density functional theory and Boltzmann transport theory, we investigated electronic, electrical and optical properties of Kesterite CZTS under different strain conditions. Our results indicate that both biaxial compressive and tensile strain effects lead to change in the band gap of this structure with different strain values. Furthermore, the edge of absorption, under the influence of an increasing compression, moves towards the short wavelengths. Electrical conductivity for pure CZTS and under dilatation and compression shows that with the increase of dilatation the conductivity of the material also increases, this physical property could be exploited to improve the performance of CZTS a suitable absorbent material in solar cells.

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Section: Introductionmentioning

confidence: 99%

Strain effects on the electronic, optical and electrical properties of Cu2ZnSnS4: DFT study

Kahlaoui

Belhorma

Labrim

et al. 2020

Heliyon

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“…The influence of the increase of the Sn amount on the Cu segregation during the annealing was studied. The fabrication parameters were equal to those reported by Shimamune et al; 16) only the Sn crucible temperature was changed. In addition, we analyze the structure of the CZTS thin films, fabricated using the MBE system, by performing Raman spectroscopy and depth profiles measurements.…”

Section: Related Contentmentioning

confidence: 99%

Suppression of Cu₂₋ _x S formation in Cu₂ZnSnS₄ by tin incorporation using molecular beam epitaxy system

Nishida¹,

Murayama²,

Takeuchi³

et al. 2018

Jpn. J. Appl. Phys.

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A Cu 2 ZnSnS 4 (CZTS) thin film was fabricated by co-evaporation of its constituents (Cu, Zn, Sn, and S) and subsequent annealing in S-flux using molecular beam epitaxy system. Two Sn crucible temperatures were considered, 1,010 and 1,020°C. The Raman spectrum of the sample exhibited the main peaks at 336 cm %1 attributed to CZTS and 472 cm %1 attributed to Cu 2%x S. The annealing temperature that yielded CZTS with a lower amount of Cu 2%x S was in the range of 380-420°C. The peaks of the Cu 2%x S phase were not observed in the sample fabricated at the Sn crucible temperature of 1,020°C and annealed at 420°C. The suppression of the Cu segregation near the surface, yielded a suppression of the Cu 2%x S phase, as revealed by the Raman spectra. The increase of the Sn ratio, achieved by increasing the crucible temperature, contributed to the suppression of the Cu 2%x S phase and improvement of the CZTS crystalline quality.

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“…To date, some CZTS formation processes have been reported. [11][12][13][14][15][16][17][18] Generally, almost all the processes consist of precursor formation followed by heat treatment at 400 °C-600 °C. The highest process temperature for the CZTS solar cell formation process is the heat treatment temperature required to form CZTS film.…”

Section: Introductionmentioning

confidence: 99%

CZTS polycrystal formation by laser annealing and demonstration of solar cell fabrication

Shimamune

Inoue

Jimbo

2022

Jpn. J. Appl. Phys.

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Cu2ZnSnS4 (CZTS) is a promising material for solar cells because all its constituents are earth-abundant elements, and its light absorption coefficient is ∼100 times higher than that of Si. CZTS is generally formed by precursor formation followed by heat treatment at 400 °C–600 °C. In this work, a novel CZTS formation process, which consists of Cu-Zn-Sn-S containing CZTS precursor formation followed by 445 nm laser irradiation in atmosphere, is investigated. X-ray diffraction, Raman spectroscopy, scanning electron microscopy, and UV–vis spectroscopy analysis reveals that the poly crystallization of CZTS precursor is promoted by increasing the output power or scan time per unit length at the laser irradiation. This suggests that the defect or secondary phase reduces, and the precursor changes to CZTS polycrystal by laser annealing. Finally, a CZTS thin-film solar cell is fabricated through laser annealing, with an efficiency of 0.003% under AM1.5 G (100 mW cm−2) at 25 °C.

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Cu2ZnSnS4 formation by co-evaporation and subsequent annealing in S-flux using molecular beam epitaxy system

Cited by 11 publications

References 17 publications

Strain effects on the electronic, optical and electrical properties of Cu2ZnSnS4: DFT study

Strain effects on the electronic, optical and electrical properties of Cu2ZnSnS4: DFT study

Suppression of Cu₂₋ _x S formation in Cu₂ZnSnS₄ by tin incorporation using molecular beam epitaxy system

CZTS polycrystal formation by laser annealing and demonstration of solar cell fabrication

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Cu2ZnSnS4 formation by co-evaporation and subsequent annealing in S-flux using molecular beam epitaxy system

Cited by 11 publications

References 17 publications

Strain effects on the electronic, optical and electrical properties of Cu2ZnSnS4: DFT study

Strain effects on the electronic, optical and electrical properties of Cu2ZnSnS4: DFT study

Suppression of Cu2− x S formation in Cu2ZnSnS4 by tin incorporation using molecular beam epitaxy system

CZTS polycrystal formation by laser annealing and demonstration of solar cell fabrication

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Suppression of Cu₂₋ _x S formation in Cu₂ZnSnS₄ by tin incorporation using molecular beam epitaxy system