Cubic boron nitride films for industrial applications

Deposition of thick cubic boron nitride films — Mechanisms and concepts

“…Indeed, the dc plasma jet process of Matsumoto and Zhang [9,10] could be applied successfully to Si, but not to working-materials such as cemented carbide [21]. Concerning the high temperature processes of Matsumoto et al [9,10,22] and Zhang et al [12,13] the question also arises whether a fluorine chemistry (BF 3 ) will find enough acceptance for widespread industrial use [15].…”

Hexagonal boron nitride grown by MOVPE

“…The c-BN has a zincblende crystal structure with a lattice constant of 3.61 Å . Because of its indirect wide band gap of 6.170.2 eV and thermal conductivity of 13 W/cm K, c-BN has been extensively studied for high-temperature and highpower applications [1]. In contrast, h-BN and w-BN, whose crystal structures are graphite-like with lattice constants of a ¼ 2.50 and c ¼ 6.66 Å , and wurtzite, with lattice constants of a ¼ 2.55 and c ¼ 4.22 Å , are promising materials for optical device applications in the deep ultraviolet spectral region.…”

The chemical composition and bonding structure of B–C–N–H thin films deposited by reactive magnetron sputtering

“…The spectrum of the BN film showed two main absorption bands, around 1370 cm −1 (B-N in-plane stretching) and 780 cm −1 (sp 2 B-N-B out-of-plane bond stretching), which are characteristic of the h-BN phase with sp 2 bonding structure. [29,30] Although it has been reported that the absorption band at 1070 cm −1 is due to sp 3 bonds of c-BN structure, [31] it is not identified in B-C-N-H films, suggesting that for boron and nitrogen in our films, only a hexagonal phase with sp 2 bonding is formed. In the spectra obtained from B-C-N-H film, we can observe a broad and intense band between 1000 and 1700 cm −1 .…”