Cubic boron phosphide epitaxy on zirconium diboride

Padavala, Balabalaji; Al-Atabi, Hayder A.; Tengdelius, Lina; Lu, Jun; Högberg, Hans; Edgar, James H.

doi:10.1016/j.jcrysgro.2017.11.014

Cited by 15 publications

(14 citation statements)

References 28 publications

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“…[68][69][70][71][72] After these initial investigations into the electrical properties and p-type doping of BP, no reports of the p-type material occur until much later. [73][74][75] Despite this absence of electrical characterization, many studies exist demonstrating BP synthesis by a variety of methods that include structural and optical characterization. One of the most common ways to make BP is through bulk synthesis techniques, such as flux growth or solid-state reaction.…”

Section: Boron Phosphidementioning

confidence: 99%

“…One of the most common ways to make BP is through bulk synthesis techniques, such as flux growth or solid-state reaction. 30,[76][77][78][79] Thin-film deposition of BP is almost invariably carried out by CVD of some kind, either metal-organic chemical vapor deposition (MOCVD), 73,80,81 or standard CVD, 68,[70][71][72]74,75,[82][83][84][85] or even plasma-enhanced CVD. 86 Other, less common deposition methods include vapor-liquid-solid growth, 87,88 thermal evaporation from powders in vacuum, 89 or sputtering in phosphine/Ar atmosphere.…”

Section: Boron Phosphidementioning

confidence: 99%

“…What is lacking in the literature are studies focused on electrical characterization of p-type BP. Given that several reports of p-type conductivity already exist, 68,71,[73][74][75] and that this material has been computationally identified as having a disperse VB suitable for high mobility of holes, 15 all that remains is to couple known deposition recipes with standard electrical characterization techniques to experimentally confirm the computational predictions.…”

Section: Boron Phosphidementioning

confidence: 99%

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Bridging the p-type transparent conductive materials gap: synthesis approaches for disperse valence band materials

Fioretti

Morales‐Masis

2020

J. Photon. Energy

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Transparent conductive materials (TCMs) with high p-type conductivity and broadband transparency have remained elusive for years. Despite decades of research, no p-type material has yet been found to match the performance of n-type TCMs. If developed, the high-performance p-type TCMs would lead to significant advances in a wide range of technologies, including thin-film transistors, transparent electronics, flat screen displays, and photovoltaics. Recent insights from high-throughput computational screening have defined design principles for identifying candidate materials with low hole effective mass, also known as disperse valence band materials. Particularly, materials with mixed-anion chemistry and nonoxide materials have received attention as being promising next-generation p-type TCMs. However, experimental demonstrations of these compounds are scarce compared to the computational output. One reason for this gap is the experimental difficulty of safely and controllably sourcing elements, such as sulfur, phosphorous, and iodine for depositing these materials in thin-film form. Another important obstacle to experimental realization is air stability or stability with respect to formation of the competing oxide phases. We summarize experimental demonstrations of disperse valence band materials, including synthesis strategies and common experimental challenges. We end by outlining recommendations for synthesizing p-type TCMs still absent from the literature and highlight remaining experimental barriers to be overcome.

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Section: Boron Phosphidementioning

confidence: 99%

Section: Boron Phosphidementioning

confidence: 99%

Section: Boron Phosphidementioning

confidence: 99%

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Bridging the p-type transparent conductive materials gap: synthesis approaches for disperse valence band materials

Fioretti

Morales‐Masis

2020

J. Photon. Energy

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“…The study by Tomida et al 21 showed that annealing in hydrogen up to 1100 °C did not affect the ZrB2 surface. At a higher temperature of 1200 °C Padavala et al 26 deposited semiconductor BP films from diborane (B2H6) and phosphine (PH3) at 1200 °C and without apparent change to ZrB2…”

Section: E Stability Of Zrb2 In Cvd Of Sp 2 -Bnmentioning

confidence: 99%

“…In a recent publication, Padavala et al deposited films of BP by CVD from diborane (B2H6) and phosphine (PH3) deposited at temperatures of 1000, 1100, and 1200 °C on epitaxial ZrB2 thin films. 26 In this work, we investigate CVD of sp 2 -BN films from triethylboron (TEB, B(C2H5)3) and NH3 at 1485 °C, using ~300 nm thick epitaxial ZrB2 films deposited by direct current magnetron sputtering (DCMS) on 4H-SiC(0001) substrates and where the choice of substrate material resulted in ZrB2 films free of crystal twinning 15 .…”

Section: Introductionmentioning

confidence: 99%

Rhombohedral boron nitride epitaxy on ZrB2

Souqui

Pališaitis

Ghafoor

et al. 2020

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Epitaxial rhombohedral boron nitride (r-BN) films were deposited on ZrB2(0001)/4H-SiC(0001) by chemical vapor deposition at 1485 °C from the reaction of triethylboron and ammonia and with a minute amount of silane (SiH4). X-ray diffraction (XRD) φ-scans yield the epitaxial relationships of r-BN(0001)∥ZrB2(0001)out-of-plane and r-BN[112¯0]∥ZrB2[112¯0] in-plane. Cross-sectional transmission electron microscopy (TEM) micrographs showed that epitaxial growth of r-BN films prevails to ∼10 nm. Both XRD and TEM demonstrate the formation of carbon- and nitrogen-containing cubic inclusions at the ZrB2 surface. Quantitative analysis from x-ray photoelectron spectroscopy of the r-BN films shows B/N ratios between 1.30 and 1.20 and an O content of 3–4 at. %. Plan-view scanning electron microscopy images reveal a surface morphology where an amorphous material comprising B, C, and N is surrounding the epitaxial twinned r-BN crystals.

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Boron Phosphide Films by Reactive Sputtering: Searching for a P‐Type Transparent Conductor

Crovetto

Adamczyk

Schnepf

et al. 2022

Adv Materials Inter

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eral applications such as a corrosion-and heat-resistant coating, [4,5] photo-and electrocatalyst, [6,7] as well as for thermal management [1] and extreme UV optics applications. [8] More recently, BP was identified as a potential p-type transparent conductive material (TCM). [9] This is a particularly interesting prospect, because obtaining high p-type conductivity in optically transparent materials is still an unsolved challenge. [10,11] Unlike the case of other p-type TCM candidates, bipolar doping has been reported in BP by various authors. [3,5,9,12,13] Thus, BP could be a unique example of a transparent material with both p-type and n-type doping capability. BP crystallizes in the diamond-derived zincblende structure with tetrahedral coordination. Because the electronegativity difference between B and P is small, BP is a covalent solid and its band structure is closely related to that of Si and C in the diamond structure. The main difference is an intermediate size of the fundamental indirect band gap for BP (≈2.0 eV) [14][15][16] mainly due to an intermediate bond length. Although this band gap corresponds to visible light, the direct band gap of BP is much wider and falls in the UV region (≈4.3 eV). [15][16][17] The weakness of indirect transitions predicted for BP at room temperature [15] is the key factor that could make BP thin films sufficiently transparent for many TCM applications. For example, a 100 nm-thick BP film is expected to absorb negligible amounts of red-yellow light and less than 10% of violet light according to first-principles calculations including electron-phonon coupling. [15] With respect to electrical properties, BP has a highly disperse valence band produced by p orbitals, ensuring low hole effective masses (0.35 m e ). [9] Unlike the case of diamond, the valence band maximum of BP lies at a relatively shallow energy with respect to the vacuum level. Shallow, disperse valence bands are usually correlated with high p-type dopability, due to easier formation of uncompensated shallow acceptor defects. [18,19] Open Questions in BP Research Conductivity and TransparencyThe highest conductivity reported for p-type BP is 3600 S cm −1 for a nominally undoped single-crystalline film deposited by chemical vapor deposition (CVD) at 1050 °C using B 2 H 6 and With an indirect band gap in the visible and a direct band gap at a much higher energy, boron phosphide (BP) holds promise as an unconventional p-type transparent conductor. This work reports on reactive sputtering of amorphous BP films, their partial crystallization in a P-containing annealing atmosphere, and extrinsic doping by C and Si. The highest hole concentration to date for p-type BP (5 × 10 20 cm −3 ) is achieved using C doping under B-rich conditions. Furthermore, bipolar doping is confirmed to be feasible in BP. An anneal temperature of at least 1000 °C is necessary for crystallization and dopant activation. Hole mobilities are low and indirect optical transitions are stronger than that predicted by theory. Low crystalline qua...

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Cubic boron phosphide epitaxy on zirconium diboride

Cited by 15 publications

References 28 publications

Bridging the p-type transparent conductive materials gap: synthesis approaches for disperse valence band materials

Bridging the p-type transparent conductive materials gap: synthesis approaches for disperse valence band materials

Rhombohedral boron nitride epitaxy on ZrB2

Boron Phosphide Films by Reactive Sputtering: Searching for a P‐Type Transparent Conductor

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