CuInSe 2 film growth using precursors deposited at low temperature

Investigation of high-quality CuInSe2 films with various Cu/In ratios

“…The composition was integrally measured for the bilayer-CIS films. The top layers composed of large crystals grow under Cu-rich conditions and the bottom parts grow under In-rich conditions [6]. For some other samples, the small crystallites at the bottom layers disappeared in the Cu-rich CIS layers.…”

“…To improve the quality of the CIS absorber, various techniques, such as co-evaporation [2], sputtering [3], stacked elemental layer (SEL) techniques [4] and hybrid sputtering and evaporation [5], have been employed for higher efficiency thin film devices. In particular, the Cu/In ratios in the CIS layers should be controlled to improve the quality of CIS crystal and the device performance of thin film solar cells [6]. However, to the best of our knowledge, there have been no detailed investigations on the effect of the Cu/In ratios on the structural and electrical quality of CIS thin films.…”

12.95% Efficient Cu(In,Ga)Se2 Solar Cells by Single-Step Atmospheric Selenization, Scaled to Monolithically Integrated Modules

“…A typical process schematic presenting selenization experiments includes a typical selenization profile and a representative selenization system with a graphite box containing an In-CuGa/Mo film, as shown in Figure . As it is well reported that the selenization of the In-CuGa precursor begins at about 480 °C to form a CIGS phase, yet a higher temperature of about 550 °C is required to moderate secondary phases and to achieve grain growth in CIGS . The CIGS phase formation during the selenization of the In-CuGa precursor was intensively investigated in the past. − In view of this, based on earlier reports, a selenization temperature of 550 °C was selected; however, the selenization time was optimized to obtain a highly crystalline chalcopyrite phase of the CIGS absorber from the sputtered In-CuGa precursor film.…”

Electron beam irradiation of sputtered Cu–In–Se precursors with double layered structure

“…Among these, many researchers have affirmatively thought that the sputtering method could be a good candidate for industralization because of the feasiblity of large-area production. Cu-In-Se precursors are commonly prepared using both co-sputtering and multi-layered structure from a combination of In and Cu targets [10,11]. An additional complement of selenium (Se) is unavoidable, and sputtered precursors without Se should be sequentially annealed with an excessive supply of Se.…”