CuInSe/sub 2/ films prepared by screen-printing and sintering method

Arita, Takaichi; Suyama, Naoki; Kita, Yasushi; Kitamura, S.; Hibino, Takeshi; Takada, Hiroya; Omura, K.; Ueno, Naohiro; Murozono, Mikio

doi:10.1109/pvsc.1988.105992

Cited by 12 publications

(4 citation statements)

References 4 publications

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“…This facile particle growth has rarely been reported primarily because sintering of highly crystalline CIGS nanoparticles is difficult because of the high melting point of CIGS. 17,20 Interestingly, this substrate temperature of 520 °C (Figure 4d) is very close to the melting temperature of CuSe binary phase, which was found to exist in our binary mixture precursors. From this result, we claim that the significant growth of the Cu−In−Se nanoparticles by selenization at 520 °C is closely related to the presence of amorphous Cu−Se phase in the precursor particles, also supported by the fact that particle growth was not remarkable when the substrate temperature was in the range of 280 to 430 °C.…”

Section: ■ Results and Discussionsupporting

confidence: 67%

CuInSe₂ (CIS) Thin Films Prepared from Amorphous Cu–In–Se Nanoparticle Precursors for Solar Cell Application

Ahn

Kim

Cho

et al. 2012

ACS Appl. Mater. Interfaces

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CuInSe(2) (CIS) absorber layers for thin film solar cells were formed via a nonvacuum route using nanoparticle precursors. A low-temperature colloidal process was used to prepare nanoparticles by which amorphous Cu-In-Se nanoparticles were formed within 1 min of reaction without any external heating. Raman spectra of the particles revealed that they were presumably mixtures of amorphous Cu-Se and In-Se binaries. Selenization of the precursor film prepared by doctor blade coating of the Cu-In-Se nanoparticles resulted in a facile growth of the particles up to micrometer scale. However, it also left large voids in the final film, which acted as short circuiting paths in completed solar cells. To solve this problem, we applied a solution-filling treatment in which a solution containing Cu and In ions was additionally coated onto the precoated nanoparticles, resulting in a complete infiltration of the filler solution into the pores in the nanoparticles based film. By this approach, short circuiting of the device was significantly mitigated and a conversion efficiency of up to 1.98% was obtained.

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Section: ■ Results and Discussionsupporting

confidence: 67%

CuInSe₂ (CIS) Thin Films Prepared from Amorphous Cu–In–Se Nanoparticle Precursors for Solar Cell Application

Ahn

Kim

Cho

et al. 2012

ACS Appl. Mater. Interfaces

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“…Attempts to use such layers without annealing have produced only limited photovoltaic response 134. However, sintering such materials is difficult as the high melting point of CIGS leads to very limited sintering at the temperatures accessible on low‐cost substrates 135. Similar difficulties are encountered when using atomically mixed ternary and quaternary precursor particles, probably due to the formation of CIGS at very low temperatures, before significant inter‐particle sintering has occurred 136,137.…”

Section: Particulate Processes For Cigs Depositionmentioning

confidence: 99%

Non‐vacuum methods for formation of Cu(In, Ga)(Se, S)₂ thin film photovoltaic absorbers

Hibberd

Chassaing

Liu³

et al. 2010

Progress in Photovoltaics

321

196

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Polycrystalline thin films of copper indium diselenide and its alloys with gallium and sulphur (CIGS) have proven to be suitable for use as absorbers in high-efficiency solar cells. Record efficiency devices of 20% power conversion efficiency have been produced by co-evaporation of the elements under high vacuum. However, non-vacuum methods for absorber deposition promise significantly lower capital expenditure and reduced materials costs, and have been used to produce devices with efficiencies of up to 14%. Such efficiencies are already high enough for commercial up-scaling to be considered and several companies are now trying to develop products based on non-vacuum deposited CIGS absorbers. This article will review the wide range of non-vacuum techniques that have been used to deposit CIGS thin films, highlighting the state of the art and efforts towards commercialization.

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“…N 2 H 4 , or nanoparticle routes without organic coordination of the metal cations are preferred. However, lower molecular intermixing and remaining porosity are evident downsides of the nanoparticle route . In that regard, it is imperative to find suitable fluxing agents to ensure metal diffusion and grain growth.…”

Section: Introductionmentioning

confidence: 99%

Liquid‐selenium‐enhanced grain growth of nanoparticle precursor layers for CuInSe₂ solar cell absorbers

Uhl

Fuchs

Rieger

et al. 2014

Progress in Photovoltaics

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Large-grained CuInSe 2 absorber layers are synthesized using a non-vacuum process based on nanoparticle ink precursors and selenization by rapid thermal processing (RTP). The use of hydroxide-based particles in organic solvents allows for the conversion with elemental selenium without the need to employ explosive and/or toxic H 2 or H 2 Se gasses. Lateral grain sizes up to 4 μm are obtained through a novel RTP route, overcoming the inherently high layer porosity for previous nanoparticle processes. Morphological and elemental characterization at interrupted selenization steps suggests that liquid selenium can play a beneficial role in promoting layer densification and grain growth. Long carrier collection lengths in CuInSe 2 enable notable conversion efficiencies, despite the low minority carrier lifetimes of below 1 ns. Record efficiencies up to 8.73% highlight the potential of low-cost, non-vacuum deposition of chalcopyrite absorber layers with safe and simple precursors and processing routes.

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CuInSe/sub 2/ films prepared by screen-printing and sintering method

Cited by 12 publications

References 4 publications

CuInSe₂ (CIS) Thin Films Prepared from Amorphous Cu–In–Se Nanoparticle Precursors for Solar Cell Application

CuInSe₂ (CIS) Thin Films Prepared from Amorphous Cu–In–Se Nanoparticle Precursors for Solar Cell Application

Non‐vacuum methods for formation of Cu(In, Ga)(Se, S)₂ thin film photovoltaic absorbers

Liquid‐selenium‐enhanced grain growth of nanoparticle precursor layers for CuInSe₂ solar cell absorbers

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CuInSe/sub 2/ films prepared by screen-printing and sintering method

Cited by 12 publications

References 4 publications

CuInSe2 (CIS) Thin Films Prepared from Amorphous Cu–In–Se Nanoparticle Precursors for Solar Cell Application

CuInSe2 (CIS) Thin Films Prepared from Amorphous Cu–In–Se Nanoparticle Precursors for Solar Cell Application

Non‐vacuum methods for formation of Cu(In, Ga)(Se, S)2 thin film photovoltaic absorbers

Liquid‐selenium‐enhanced grain growth of nanoparticle precursor layers for CuInSe2 solar cell absorbers

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Product

Resources

About

CuInSe₂ (CIS) Thin Films Prepared from Amorphous Cu–In–Se Nanoparticle Precursors for Solar Cell Application

CuInSe₂ (CIS) Thin Films Prepared from Amorphous Cu–In–Se Nanoparticle Precursors for Solar Cell Application

Non‐vacuum methods for formation of Cu(In, Ga)(Se, S)₂ thin film photovoltaic absorbers

Liquid‐selenium‐enhanced grain growth of nanoparticle precursor layers for CuInSe₂ solar cell absorbers