CuInSe2/CdS heterojunction photovoltaic detectors

Abstract

We report CuInSe2/CdS p-n heterojunction photovoltaic detectors which display uniform quantum efficiencies of up to ∼70% between 0.55 and 1.25 μ. Response times as short as 5 nsec have been observed. A weak electroluminescence (0.01% external quantum efficiency) peaking near 1.4 μ has also been observed at room temperature.

Intermediate band position modulated by Zn addition in Ti doped CuGaS2

“…These materials have been widely investigated for many years [3][4][5] to be used in photovoltaic solar cells. The most important characteristic is that they combine advantages of thin film technology with the efficiency and stability of conventional crystalline silicon cells; this attractive behavior makes great expectation around future widespread use of solar cell chalcopyrites [5],…”

Materials for stretchable electronics

“…Liquid-crystal displays 1 are driven by active matrices of amorphous silicon transistors, 2 and 10% of all solar cells are made of amorphous silicon 3 or chalcogenide fi lms. 4,5 Like any other stiff material, circuits become fl exible and rollable when their thickness is reduced to 1/1000 of the desired radius of curvature. [6][7][8][9] Thinfi lm circuits are made on fl at surfaces by standard microfabrication techniques.…”

Synthesis and Characterization of CIS Thin Film Using Chloride Solution

“…All of these problems can be overcome in CuInSe 2 thin film solar cells developed before have recently been spotlighted, and many studies are underway [1], [2]- [5]. CuInSe 2 has direct transition type band gap, and compared different optical absorption compounds and 1×105 m-1's high optical absorption coefficient c, Ga, Al, 3 foot by 6 foot or the addition of elemental S of the optical band gap to 1.0 e V ~ 1.7 V e scope of control can determine the Chalcopyrite I-III-VI stepped into the compound of the two thin-film solar cells is as effective substances from optical absorption layer [6], [7]. VI 2 Chalcopyrite crystal structure of the family as the gap can be adjusted in the range of 1.0eV ~ 2.7eV optical absorption in thin-film solar cell layer is an effective substance [6], [7].…”

“…CuInSe 2 has direct transition type band gap, and compared different optical absorption compounds and 1×105 m-1's high optical absorption coefficient c, Ga, Al, 3 foot by 6 foot or the addition of elemental S of the optical band gap to 1.0 e V ~ 1.7 V e scope of control can determine the Chalcopyrite I-III-VI stepped into the compound of the two thin-film solar cells is as effective substances from optical absorption layer [6], [7]. VI 2 Chalcopyrite crystal structure of the family as the gap can be adjusted in the range of 1.0eV ~ 2.7eV optical absorption in thin-film solar cell layer is an effective substance [6], [7]. CdS Heterojunction with solar cells as a form of CuInSe2 thin films have excellent characteristics, such as the optical absorption layer of solar cells can be prepared.…”