CuInSe2 thin films grown by MOCVD: characterization, first devices

Temperature dependence of microstructure and physical properties of CuInSe2 prepared by rapid synthesis reaction

“…Currently CuInSe 2 thin films have been prepared by various methods [12][13][14][15][16], the most common vacuum-based process co-evaporates or co-sputters copper, gallium, indium or their selenide compounds, then anneals the resulting film with a selenide vapor to form the final highquality CIGS films, and a non-vacuum-based alternative process deposits nanoparticles of the precursor materials on the substrate and then sinters them in situ. Hence, the microstructural characteristics of the films highly depend on the sintering process.…”

Synthesis and physical properties of solar material Cu1+xIn1‐xSe2

“…CuInSe 2 is a member of I–III–VI 2 semiconductor group crystallized in the chalcopyrite phase 8, 9. The CuInSe 2 thin film has been prepared by various methods including molecular beam epitaxy 10, flash evaporation 11, multiple source evaporation 12, radio frequency sputtering 13, spray pyrolysis 14, 15, chemical deposition 16, and so on. Many studies have shown that the energy conversion efficiency can be improved by doping 17–19.…”

Deposition of CuInSe2Thin Films Using Stable Copper and Indium-selenide Precursors through Two-stage MOCVD Method

“…These films have been fabricated through a large variety of techniques [6][7][8][9][10][11][12][13][14] such as RF sputtering, 15 spray pyrolysis, [16][17][18] chemical deposition, 19 stacked elemental layer (SEL), [20][21][22] microwave-assisted solid-state reaction involving pure metal powders, 23 preparation of nanoparticles, 24 and metal organic chemical vapor deposition of organometallic precursors (MOCVD). [25][26][27] Among them, MOCVD offers several advantages; through this method, it is relatively easy to obtain high quality thin films with less impurities and uniform thickness and to control the stoichiometric ratio of relevant elements. 26 However, the success of the MOCVD process depends on the availability of highly volatile and thermally stable precursors since these thermal properties are important to achieve uniform thickness and reproducible film growth.…”

“…26 However, the success of the MOCVD process depends on the availability of highly volatile and thermally stable precursors since these thermal properties are important to achieve uniform thickness and reproducible film growth. 27 We recently reported the preparation of CuInSe2 thin films through two-stage MOCVD process, using Cu-and In/Secontaining single source precursors. 26,28 As an In/Se precursor, di-µ-methylselenobis(dimethylindium) was used.…”