Curing Study of Hydrogen Silsesquioxane Under H<sub>2</sub>/N<sub>2</sub> Ambient

Liou, Huey-Chiang; Dehate, Evan; Duel, Jerry; Dall, Fred

doi:10.1557/proc-612-d5.12.1

Cited by 4 publications

(3 citation statements)

References 4 publications

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“…If we again use the model that assumes negligible tension, the relation f ∝ E ρ implies that the density of the glass fibres must increase slightly during the curing process. This increase has been observed in HSQ thin films [16].…”

Section: Discussionsupporting

confidence: 68%

Measurement of the Young’s moduli of individual polyethylene oxide and glass nanofibres

2005

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We have used scanned electrospinning to deposit oriented polyethylene oxide and silica glass fibres over trenches etched in silicon. We measured the Young’s moduli of the fibres using an atomic force microscope. The Young’s moduli of the glass fibres agree with values calculated from previously measured mechanical resonance frequencies of similar fibres. The Young’s moduli of the polyethylene oxide fibres are significantly larger than those reported for polyethylene oxide bulk and films, suggesting molecular orientation in the fibres.

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Section: Discussionsupporting

confidence: 68%

Measurement of the Young’s moduli of individual polyethylene oxide and glass nanofibres

2005

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“…HSQ was chosen for its high resolution ͑15 nm͒ and sensitivity in negative tone electron beam lithography, [5][6][7] well characterized properties, 8 availability, 9 and its chemical structure ͑HSiO 3/2 ͒ which should allow nearly complete conversion to SiO 2 with a minimal amount of impurities. Variable energy electron beam lithography allows control of the electron penetration depth in HSQ and in similar polymers over three orders of magnitude, from less than 10 nm to a͒ Electronic mail: dtanenbaum@pomona.edu greater than 10 m with a single exposure tool with beam energies from 200 eV to 30 keV.…”

Section: Fabrication Processmentioning

confidence: 99%

Dual exposure glass layer suspended structures: A simplified fabrication process for suspended nanostructures on planar substrates

Tanenbaum

Olkhovets

Šekarić

2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We have developed and demonstrated here a simplified flexible fabrication process for glass nanomechanical systems. This process uses a single layer of spin on glass (SOG) material with two negative tone electron beam exposures at two different exposure energies to define the suspended and support structures, respectively. After development the SOG can be converted into glass. The process is additive and can be applied to any flat substrate. We have fabricated a variety of glass nanomechanical oscillators and measured their mechanical resonances using a mechanical piezoelectric driving force and optical interferometric detection. Suspended structures were fabricated with thickness of less than 50 nm and lateral dimensions of less than 100 nm supported anywhere from 150 to 800 nm above the substrate. Resonance frequencies for glass wires with both ends fixed (cross section 110 nm×180 nm) and lengths of 4–9 μm range from 7 to 30 MHz, with quality (Q) factors of over 1000. Annealing the structures in an oxygen ambient roughly doubles both the frequencies and the Q factors.

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“…Because the I D /I G ratio of the hydrogenated graphene in Figure 2a (2 mC/ cm 2 ) is roughly unity, the H defect number density can be estimated to be ∼5 × 10 14 /cm 2 . Given the average HSQ film thickness of 30 nm, density 39 of ∼1.3 g/cm 3 , and molecular weight of 424 as H 8 Si 8 O 12 , the maximum integrated H atom flux available is 4.4 × 10 16 /cm 2 (equivalent to ∼10 ML). This gives ∼0.03 for net sticking probability (S) of H atom on 1 L graphene at 300 K, assuming that ∼70% of Si-H bonds are dissociated (Figure 2c) and that half of the liberated H atoms reach graphene surface.…”

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confidence: 99%

Reversible Basal Plane Hydrogenation of Graphene

et al. 2008

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We report the chemical reaction of single-layer graphene with hydrogen atoms, generated in situ by electron-induced dissociation of hydrogen silsesquioxane (HSQ). Hydrogenation, forming sp3 C--H functionality on the basal plane of graphene, proceeds at a higher rate for single than for double layers, demonstrating the enhanced chemical reactivity of single sheet graphene. The net H atom sticking probability on single layers at 300 K is at least 0.03, which exceeds that of double layers by at least a factor of 15. Chemisorbed hydrogen atoms, which give rise to a prominent Raman D band, can be detached by thermal annealing at 100-200 degrees C. The resulting dehydrogenated graphene is "activated" when photothermally heated it reversibly binds ambient oxygen, leading to hole doping of the graphene. This functionalization of graphene can be exploited to manipulate electronic and charge transport properties of graphene devices.

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Curing Study of Hydrogen Silsesquioxane Under H₂/N₂ Ambient

Cited by 4 publications

References 4 publications

Measurement of the Young’s moduli of individual polyethylene oxide and glass nanofibres

Measurement of the Young’s moduli of individual polyethylene oxide and glass nanofibres

Dual exposure glass layer suspended structures: A simplified fabrication process for suspended nanostructures on planar substrates

Reversible Basal Plane Hydrogenation of Graphene

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Curing Study of Hydrogen Silsesquioxane Under H2/N2 Ambient

Cited by 4 publications

References 4 publications

Measurement of the Young’s moduli of individual polyethylene oxide and glass nanofibres

Measurement of the Young’s moduli of individual polyethylene oxide and glass nanofibres

Dual exposure glass layer suspended structures: A simplified fabrication process for suspended nanostructures on planar substrates

Reversible Basal Plane Hydrogenation of Graphene

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Curing Study of Hydrogen Silsesquioxane Under H₂/N₂ Ambient