Current and capacitance hysteresis in porous semiconductor nanofilms

Zhanabaev, Z. Zh.; Turlykozhayeva, D. A.; Ikramova, Saltanat B.; Tileu, A. O.; Maksutova, A. A.; Khaniyeva, Ainur K.

doi:10.26577/phst.2020.v7.i2.06

Cited by 2 publications

(1 citation statement)

References 8 publications

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“…applied 10, 20, and 30 min. as etching times in order to crystalline silicon n-type (111) and (100) wafers in order to electrochemically etch PS [35][36][37][38]. It was confirmed that, while utilizing the electrochemical etching technique, the PS's depth, width, and roughness increased as the etching time rose [39][40][41][42][43][44].…”

Section: Introductionmentioning

confidence: 83%

Influence Study of Etching Time for Porous Silicon on Morphological, Optical, Electrical and Spectral Responsivity Properties

Urabe

Nayef

Kamel

2023

Al-Mustansiriyah Journal of Science

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In this investigation, n-type (100) silicon wafers with a thickness of 600 ± 25 μm and resistance of 0.1-100 μΩ were used to manufacture porous silicon. With the aid of hydrofluoric acid (HF) with a 20% concentration, a current density of 20 mA/cm2, and various experimental drilling times of 5, 15, and 25 minutes with the fixation of other parameters, the photoelectrochemical etching method was successful. The morphology of porous silicon was investigated using scanning electron microscopy (SEM), the XRD- diffraction wide of porous silicon creation with rising apex peaks was confirmed, and (AFM) sponge-like morphology was seen, and the pore diameter grew larger as drilling time rose. In a drilling time of 15 minutes, it is able to quantify both the vibrational and electrical characteristics of the energy band gap using Raman analysis and PL detection. Investigate sample samples' current voltage readings (J-V) at various etching times. Additionally, we discovered devices with a broad wavelength that react to the response in the investigation of the spectrum response PS AL/PS/SI/Al as a photodetector.

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Section: Introductionmentioning

confidence: 83%

Influence Study of Etching Time for Porous Silicon on Morphological, Optical, Electrical and Spectral Responsivity Properties

Urabe

Nayef

Kamel

2023

Al-Mustansiriyah Journal of Science

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Development of Memory Elements based on Surface-Modified Nanostructured Porous Silicon

Duisebayev,

Ibraimov,

Khaniyev

et al. 2024

Wseas Transactions on Electronics

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Due to advancements in memory technology, nanostructured semiconductor-based memristors are attracting increasing attention. This article presents the results of a study on memristors based on modified porous structures made from silicon. The memristive properties of nanostructured porous silicon (por-Si) and metal-oxide layers were investigated. The memristors based on por-Si were fabricated using electrochemical etching. The study shows that after 3 minutes, the por-Si film exhibited reversible properties, indicating that memristive behavior was observed in the porous silicon nanofilms. Metal-oxide semiconductor, such as CuO, was deposited on the por-Si surface using magnetron sputtering. The morphology of the por-Si and heterostructure was analyzed using scanning electron microscopy. The influence of light illumination on the memristor properties of films was also observed, with an increase in the hysteresis area dependent on the illumination process.

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Current and capacitance hysteresis in porous semiconductor nanofilms

Cited by 2 publications

References 8 publications

Influence Study of Etching Time for Porous Silicon on Morphological, Optical, Electrical and Spectral Responsivity Properties

Influence Study of Etching Time for Porous Silicon on Morphological, Optical, Electrical and Spectral Responsivity Properties

Development of Memory Elements based on Surface-Modified Nanostructured Porous Silicon

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