Current, charge, and capacitance during scanning probe oxidation of silicon. I. Maximum charge density and lateral diffusion

Dagata, John A.; Pérez‐Murano, F.; Martin, C.; Kuramochi, Hiromi; Yokoyama, Hiroshi

doi:10.1063/1.1771820

Cited by 79 publications

(57 citation statements)

References 31 publications

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“…They serve as a good model to illustrate some of the fundamental aspects involved in the local oxidation process. [16][17][18][19] Voltage pulses are applied to generate an oxide dot. The dot size depends linearly on voltage strength but the dot height shows a power law dependence of the type…”

Section: Local Oxidation Nanolithographymentioning

confidence: 99%

Nano-chemistry and scanning probe nanolithographies

García¹,

Martínez²,

Martínez³

2006

Chem. Soc. Rev.

361

306

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The development of nanometer-scale lithographies is the focus of an intense research activity because progress on nanotechnology depends on the capability to fabricate, position and interconnect nanometer-scale structures. The unique imaging and manipulation properties of atomic force microscopes have prompted the emergence of several scanning probe-based nanolithographies. In this tutorial review we present the most promising probe-based nanolithographies that are based on the spatial confinement of a chemical reaction within a nanometer-size region of the sample surface. The potential of local chemical nanolithography in nanometer-scale science and technology is illustrated by describing a range of applications such as the fabrication of conjugated molecular wires, optical microlenses, complex quantum devices or tailored chemical surfaces for controlling biorecognition processes.

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Section: Local Oxidation Nanolithographymentioning

confidence: 99%

Nano-chemistry and scanning probe nanolithographies

García¹,

Martínez²,

Martínez³

2006

Chem. Soc. Rev.

361

306

View full text Add to dashboard Cite

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“…As mentioned above, Ref. 24 gives an empirical correlation between E a and Z (E a ¼ 494-821*Z kJ mol…”

Section: à3mentioning

confidence: 99%

Scanning probe oxidation of SiC, fabrication possibilities and kinetics considerations

Lorenzoni

Torre

2013

Applied Physics Letters

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We report the outcome of atomic force microscopy local anodic oxidation experiments on 6H-SiC in air. Oxide thickness can be easily tuned by varying applied voltage and pulse duration. The height and the aspect ratio of single dots produced by single DC pulses are remarkably higher than what was reported previously, with self limiting heights exceeding 100 nm. We propose that the diminished density and the change in chemical composition of the oxide grown on SiC with respect to oxide grown under similar condition on Si cause a drop in the activation energy of oxanions diffusion within the newly formed oxide layer. V C 2013 AIP Publishing LLC.[http://dx.doi.org/10.1063/1.4825265] Silicon carbide is a wide gap semiconductor extensively employed in microelectronics industry. Due to its high thermal conductivity, high temperature operation, and chemical inertness, it is used as a valuable alternative to silicon for devices operating in hard conditions. Remarkably, SiC is the only semiconductor (except Si) whose native oxide is SiO 2 . However, SiC oxidation could result in mixed oxides products containing C inclusions. State-of-the-art technology in patterning semiconductor substrates mainly relies on mask-based techniques such as optical lithography or mask-less techniques like electron beam lithography, which are particularly suited for industrial applications such as large scale production in microelectronics and microfabrication, in general. Among all the alternatives, several promising scanning probe-related lithographies (SPLs) also emerged 1-4 as an affordable and very versatile nanofabrication technique. The advantages of using an atomic force microscope (AFM) reside in the in-line nanometric accuracy and in the possibility of directly applying multistep processes on pre-patterned substrates with no need for photoresist coatings and/or alignment tools. This makes SPL an ideal tool for flexible and fast prototyping of custom nanodevices. Few works have addressed the tip induced oxidation of SiC (Refs. 5-7) and none extensively explored the kinetics involved.In this work, we present the outcome of field induced oxidation (FIO) experiments in contact mode on 6H-SiC (0001) surface including: single pulse oxidation (pulse time ranging from 0.1 to 30 s), patterning examples (single lines and 3D patterns), and HF etch tests. The schematic of FIO is depicted in Fig. 1(a). By means of preliminary HF etching, we removed SiC native oxide layer to end up with an hydroxyl terminated surface. 8 On such surface, we were able to produce controlled single oxide dots for long oxidation times (>10 s), obtaining unexpected height and aspect ratio (height % 100 nm, full width at half maximum (FWHM) % 350 nm) in comparison with most FIO experiments (Figs. 1(b) and 1(c)). In order to have a quantitative explanation of the phenomenon, we compared the experimental data with available models dealing with Si probe oxidation in air. We estimated both oxide density and expansion rate by means of a wet etching test (dilute aqueous HF dis...

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“…[1][2][3][4] This method is based on the field-induced activation of molecules within a water meniscus and the subsequent oxidation of the sample surface. [5][6][7] Local oxidation nanolithography has been applied to fabricate nanoscale electronic devices, 8,9 microelectromechanical systems 10 or templates for the direct growth of single-molecule magnets 11 or metallic nanoparticles. 12,13 Local oxidation is compatible with imprinting techniques, thus enables the patterning of large areas has been demonstrated.…”

mentioning

confidence: 99%

Nanopatterning of carbonaceous structures by field-induced carbon dioxide splitting with a force microscope

García¹,

Losilla²,

Martínez³

et al. 2010

Applied Physics Letters

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We report a tip-based nanofabrication method to generate carbon nanopatterns. The process uses the field-induced transformation of carbon dioxide gas into a solid material. It requires the application of low-to-moderate voltages ϳ10-40 V. The method allow us to fabricated sub-25 nm dots and it can be up scaled to pattern square centimeter areas. Photoemission spectroscopy shows that the carbon is the dominating atomic species of the fabricated structures. The formation of carbon nanostructures and oxides by atomic force microscope nanolithography expands its potential by providing patterns on the same sample with different chemical composition.

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Current, charge, and capacitance during scanning probe oxidation of silicon. I. Maximum charge density and lateral diffusion

Cited by 79 publications

References 31 publications

Nano-chemistry and scanning probe nanolithographies

Nano-chemistry and scanning probe nanolithographies

Scanning probe oxidation of SiC, fabrication possibilities and kinetics considerations

Nanopatterning of carbonaceous structures by field-induced carbon dioxide splitting with a force microscope

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