Current‐Confinement Structure and Extremely High Current Density in Organic Light‐Emitting Transistors

Abstract

Extremely high current densities are realized in single-crystal ambipolar light-emitting transistors using an electron-injection buffer layer and a current-confinement structure via laser etching. Moreover, a linear increase in the luminance was observed at current densities of up to 1 kA cm(-2) , which is an efficiency-preservation improvement of three orders of magnitude over conventional organic light-emitting diodes (OLEDs) at high current densities.

Unlocking the full potential of light emitting field-effect transistors by engineering charge injection layers

“…Both ambipolar and unipolar LEFETs have been demonstrated using a wide range of materials including single crystals [6,7], conjugated polymers [8,9], dendrimers [10], and evaporated materials [11][12][13]. In some cases, it is possible to construct ambipolar devices using simple device fabrication methods with symmetric high work function source-drain electrodes (e.g.…”

Charge transport in nanoscale vertical organic semiconductor pillar devices

“…At small junction thickness, the electric field at low voltage can still be very high. The junctions can thus operate at low voltages, while maintaining sizeable current densities, which is beneficial for implementation in low-power electronic devices like organic light-emitting diodes and organic field-effect transistors416.…”

Organic Power Electronics: Transistor Operation in the kA/cm2 Regime

“…Nevertheless, for most applications, device speed and driving currents need to be raised significantly, while keeping low-cost processing without high-resolution structuring. While common organic field effect transistors reach very high current densities of a few 10 kA cm −2 in the channel region5, the areal current densities remain comparably low. Optimized transistors with short channel lengths reach current densities of 1 to 20 A cm −2 and a transit frequency normalized to the operation voltage of about 1 to 2 MHz V −1 , cf.…”