Unlocking the full potential of light emitting field-effect transistors by engineering charge injection layers

Tandy, Kristen; Ullah, Mujeeb; Burn, Paul L.; Meredith, Paul; Namdas, Ebinazar B.

doi:10.1016/j.orgel.2013.08.013

Cited by 26 publications

(51 citation statements)

References 37 publications

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“…[16][17][18][19][20][21][22][23][24][25][26][27] Applying the same spin branching ratio (25%) for rubrene/C 60 OLED, the estimated recombination effi ciency values exceed 100%.…”

Section: Recombination Effi Ciency In Rubrene and Rubrene/c 60 Lightmentioning

confidence: 97%

“…Figure 4 a shows a LEFET device architecture consisting of 400 nm thin composite layer of SiN x capped with poly(methyl methacrylate) (PMMA) layer as gate dielectric, C 60 as the n-type charge transporting layer, and rubrene as the light-emitting layer. [23][24][25][26][27] The successful operation of C 60 /rubrene LEFET is encouraging, but the key question is whether triplet excitons play a role in light emission from the LEFET. Figure 4 b shows the electrical transfer characteristics of the LEFET.…”

Section: Recombination Effi Ciency In Rubrene/c 60 Light-emitting Tramentioning

confidence: 99%

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Singlet Fission and Triplet Exciton Dynamics in Rubrene/Fullerene Heterojunctions: Implications for Electroluminescence

Ullah

Yambem

Moore

et al. 2015

Adv Elect Materials

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The role of triplet excitons in rubrene/C60 heterojunctions is investigated through detailed spectroscopic studies of triplet generation routes in the neat and heterojunction films of rubrene and C60. Time‐correlated single‐photon counting experiments on rubrene and rubrene/C60 give a long‐lived component with lifetime >200 ns, and triplets are found to live longer in rubrene/C60. A distinct reduction at short time scales in fluorescence lifetime of rubrene/C60 gives the indication of singlet exciton dissociation via formation of charge‐transfer (CT) states. Using ultrafast transient absorption spectroscopy, it is found that triplets are generated via singlet‐fission in neat rubrene films at t ≈ 1.8 ps, whereas a delayed population buildup of triplets in rubrene/C60 occurs at t ≈ 8 ps. The slow rise of triplet population confirms the role of CT‐state‐mediated triplet energy transfer in rubrene/C60. The recombination of triplets via triplet–triplet annihilation in organic light‐emitting diode (OLED) operation of rubrene/C60 is shown to generate extra singlets, which lift the spin branching ratio to values >25%. It is concluded that triplet excitons in rubrene/C60 are instrumental in bringing lower turn‐on voltages, brighter emission, and higher external quantum efficiency of electroluminescence in OLED and light‐emitting field effect transistors.

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“…[16][17][18][19][20][21][22][23][24][25][26][27] Applying the same spin branching ratio (25%) for rubrene/C 60 OLED, the estimated recombination effi ciency values exceed 100%.…”

Section: Recombination Effi Ciency In Rubrene and Rubrene/c 60 Lightmentioning

confidence: 97%

Section: Recombination Effi Ciency In Rubrene/c 60 Light-emitting Tramentioning

confidence: 99%

Singlet Fission and Triplet Exciton Dynamics in Rubrene/Fullerene Heterojunctions: Implications for Electroluminescence

Ullah

Yambem

Moore

et al. 2015

Adv Elect Materials

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“…8 LEFETs have also been demonstrated using a combination of p-type and n-type transport materials in a bipolar structure. [9][10][11] Although these LEFETs have been demonstrated to function effectively, the mobilities and/or low on/off ratios of the organic charge transport materials fall far below those of contemporary polycrystalline silicon drivers, limiting the intensity of light emission and performance. More recently, hybrid light emitting transistors (HLETs), in which metal oxides have been used as the charge transport layer, have led to devices that operate in n-type mode with higher mobilities and currents.…”

mentioning

confidence: 99%

“…The characterization set up details have been reported previously. [10][11][12] In Fig. 2(c), the highest occupied molecular orbital (HOMO) of the SY was measured using photoelectron spectroscopy in air (PESA).…”

mentioning

confidence: 99%

High mobility solution-processed hybrid light emitting transistors

et al. 2014

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“…Similar as in the cases of unipolar OLETs, a variety of protocols, such as the use of asymmetric contacts, shorting the channel length, and modification of the dielectric layer, have been employed to construct ambipolar light‐emission devices. Nevertheless, it should be noted that in most of these cases, a truly ambipolar OLET could only be realized by an appropriate combination of these methods …”

Section: State‐of‐the‐art Strategies For High Performance Oletsmentioning

confidence: 99%

Organic Light‐Emitting Transistors: Materials, Device Configurations, and Operations

Zhang

Chen

2016

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Organic light-emitting transistors (OLETs) represent an emerging class of organic optoelectronic devices, wherein the electrical switching capability of organic field-effect transistors (OFETs) and the light-generation capability of organic light-emitting diodes (OLEDs) are inherently incorporated in a single device. In contrast to conventional OFETs and OLEDs, the planar device geometry and the versatile multifunctional nature of OLETs not only endow them with numerous technological opportunities in the frontier fields of highly integrated organic electronics, but also render them ideal scientific scaffolds to address the fundamental physical events of organic semiconductors and devices. This review article summarizes the recent advancements on OLETs in light of materials, device configurations, operation conditions, etc. Diverse state-of-the-art protocols, including bulk heterojunction, layered heterojunction and laterally arranged heterojunction structures, as well as asymmetric source-drain electrodes, and innovative dielectric layers, which have been developed for the construction of qualified OLETs and for shedding new and deep light on the working principles of OLETs, are highlighted by addressing representative paradigms. This review intends to provide readers with a deeper understanding of the design of future OLETs.

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Unlocking the full potential of light emitting field-effect transistors by engineering charge injection layers

Cited by 26 publications

References 37 publications

Singlet Fission and Triplet Exciton Dynamics in Rubrene/Fullerene Heterojunctions: Implications for Electroluminescence

Singlet Fission and Triplet Exciton Dynamics in Rubrene/Fullerene Heterojunctions: Implications for Electroluminescence

High mobility solution-processed hybrid light emitting transistors

Organic Light‐Emitting Transistors: Materials, Device Configurations, and Operations

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