Current fluctuations in three-dimensionally stacked Si nanocrystals thin films

Zhou, Xin; Uchida, Ken; Oda, Shunri

doi:10.1063/1.3294329

Cited by 7 publications

(8 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Once particles reached the desired size, they were extracted from the plasma cell by a pulse of hydrogen gas . As shown in Figure , the nanocrystals left the plasma cell through an orifice and enter an ultrahigh vacuum chamber where they were deposited on a substrate to fabricate thin films. − In a recent study, the authors used emission spectroscopy to characterize this plasma . They noticed that there was a clear correlation between the increase in argon line intensity and the generation of silicon nanocrystals.…”

Section: Practical Implementation Of Synthesis Reactorsmentioning

confidence: 99%

Nonthermal Plasma Synthesis of Nanocrystals: Fundamental Principles, Materials, and Applications

et al. 2016

View full text Add to dashboard Cite

Nonthermal plasmas have emerged as a viable synthesis technique for nanocrystal materials. Inherently solvent and ligand-free, nonthermal plasmas offer the ability to synthesize high purity nanocrystals of materials that require high synthesis temperatures. The nonequilibrium environment in nonthermal plasmas has a number of attractive attributes: energetic surface reactions selectively heat the nanoparticles to temperatures that can strongly exceed the gas temperature; charging of nanoparticles through plasma electrons reduces or eliminates nanoparticle agglomeration; and the large difference between the chemical potentials of the gaseous growth species and the species bound to the nanoparticle surfaces facilitates nanocrystal doping. This paper reviews the state of the art in nonthermal plasma synthesis of nanocrystals. It discusses the fundamentals of nanocrystal formation in plasmas, reviews practical implementations of plasma reactors, surveys the materials that have been produced with nonthermal plasmas and surface chemistries that have been developed, and provides an overview of applications of plasma-synthesized nanocrystals.

show abstract

Section: Practical Implementation Of Synthesis Reactorsmentioning

confidence: 99%

Nonthermal Plasma Synthesis of Nanocrystals: Fundamental Principles, Materials, and Applications

et al. 2016

View full text Add to dashboard Cite

show abstract

“…In recent years, silicon nanostructures have attracted enormous attentions. [1][2][3][4][5] Particularly, metal-insulatorsemiconductor (MIS) structures based on silicon quantum dots are widely studied for their new physical phenomena as well as their potential applications in future memory device. The first nanocrystals based MIS memory structure was put forward by Tiwari et al, where Si nanocrystals were used as storage nodes.…”

Section: Introductionmentioning

confidence: 99%

The Charge Storage of Doubly Stacked Nanocrystalline-Si based Metal Insulator Semiconductor Memory Structure

Wang¹,

Song²,

Guo³

et al. 2013

MNSMS

View full text Add to dashboard Cite

Doubly stacked nanocrystalline-Si (nc-Si) based metal insulator semiconductor memory structure was fabricated by plasma enhanced chemical vapor deposition. Capacitance-Voltage (C-V) and capacitance-time (C-t) measurements were used to investigate electron tunnel, storage and discharging characteristic. The C-V results show that the flatband voltage increases at first, then decreases and finally increases, exhibiting a clear deep at gate voltage of 9 V. The decreasing of flatband voltage at moderate programming bias is attributed to the transfer of electrons from the lower nc-Si layer to the upper nc-Si layer. The C-t measurement results show that the charges transfer in the structure strongly depends on the hold time and the flatband voltage decreases markedly with increasing the hold time.

show abstract

“…Recently, silicon nanocrystals (SiNCs) have attracted much attention from researchers because of their unique quantum behavior, 1) electrical and optical properties, 2,3) room-temperature fabrication, [4][5][6][7][8][9] and potential for low-cost mass production. 10,11) There are many promising applications of SiNC-based devices, such as single-electron transistors, 12) light-emitting devices, [13][14][15] optical interconnections, 16) electron emitters, 16) flexible display devices, thinfilm transistors, 17) high-speed radio frequency identifications (RFIDs), 18) floating-gate memories, 19) quantum information processing devices, 20) and high-efficiency solar cells.…”

Section: Introductionmentioning

confidence: 99%

“…However, SiNC-based devices suffer from very low electrical conductivity [4][5][6][7][8][9] owing to the high surface reactivity of SiNCs, the large number of tunneling barriers provided by each of the SiNCs along conduction paths, and the formation of numerous voids inside the film. Firstly, a natural oxide layer with a thickness in the range of 1-2 nm is formed on the surface of SiNCs.…”

Section: Introductionmentioning

confidence: 99%

Channel Length Scaling and Surface Nitridation of Silicon Nanocrystals for High-Performance Electron Devices

Ferdous

Nakamine

Kodera

et al. 2013

Jpn. J. Appl. Phys.

Self Cite

View full text Add to dashboard Cite

Silicon nanocrystal (SiNC)-based thin-film devices have been fabricated, where the idea of scaling down of channel length was implemented in such a way that very few SiNCs can be fitted inside the channel in the channel length direction in order to decrease the number of barriers to increase electrical conductivity. In this study, we have demonstrated the scaling down of channel length to 20 nm in order to reduce the number of barriers provided by each of the SiNCs, which are fabricated using a very high-frequency (VHF) plasma-enhanced chemical vapor deposition (CVD) system with a diameter of 10±1 nm. A high electrical conductivity has been achieved by optimizing channel length. In addition, we have demonstrated the surface nitridation of SiNCs to protect the highly reactive surface of SiNCs from further natural oxidization and successfully suppressed the degradation of transport properties.

show abstract

Current fluctuations in three-dimensionally stacked Si nanocrystals thin films

Cited by 7 publications

References 17 publications

Nonthermal Plasma Synthesis of Nanocrystals: Fundamental Principles, Materials, and Applications

Nonthermal Plasma Synthesis of Nanocrystals: Fundamental Principles, Materials, and Applications

The Charge Storage of Doubly Stacked Nanocrystalline-Si based Metal Insulator Semiconductor Memory Structure

Channel Length Scaling and Surface Nitridation of Silicon Nanocrystals for High-Performance Electron Devices

Contact Info

Product

Resources

About