Current gain dependence on subcollector and etch-stop doping in InGaP/GaAs HBTs

Chung, T.; Bank, Seth R.; Epple, J. H.; Hsieh, K. C.

doi:10.1109/16.918224

Cited by 2 publications

(2 citation statements)

References 7 publications

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“…These results are in contrast with the previous investigation 11) that current gain increased with sub-collector doping increased up to 6 Â 10 18 cm À3 . Their devices showed same base currents with different sub-collector doping.…”

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confidence: 99%

The Effect of n-GaAs Carrier Concentration on Current Gain in InGaP/GaAs Heterojunction Bipolar Transistors

Yamada

Fukuhara

Hata

2007

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The effect of n-GaAs carrier concentration in the Si-doped sub-collector layer on InGaP/GaAs heterojunction bipolar transistor (HBT) was investigated. Current gain slightly decreased with carrier concentration increased from 5×1017 to 2×1018 cm-3, while it dramatically decreased with carrier concentration increased over 2×1018 cm-3. It was also found that current gain with a high carrier concentration of 4×1018 cm-3 decreased with annealing time. Gummel plots revealed that the reduction in current gain is caused by creation of recombination centers in the base layer. We suggest the diffusion of Ga interstitial, which is generated together with Ga vacancy, is the origin of current gain degradation during the post-growth of the sub-collector layer.

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confidence: 99%

The Effect of n-GaAs Carrier Concentration on Current Gain in InGaP/GaAs Heterojunction Bipolar Transistors

Yamada

Fukuhara

Hata

2007

jjap

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“…In recent years, InGaP/GaAs heterojunction bipolar transistors (HBTs) have become very popular and are considered as replacements for widely used AlGaAs/GaAs HBTs due to a number of advantages [2]. These advantages include low surface recombination velocity, large valance band offset between InGaP/GaAs, high etch selectivity, lack of DX center problem, and long-term reliability improvement.…”

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confidence: 99%