Electron mobility, Hall scattering factor, and sheet conductivity in AlGaN/AlN/GaN heterostructures J. Appl. Phys. 110, 113713 (2011) Reduction of the potential energy barrier and resistance at wafer-bonded n-GaAs/n-GaAs interfaces by sulfur passivation J. Appl. Phys. 110, 104903 (2011) Diameter reduction of nanowire tunnel heterojunctions using in situ annealing Appl. Phys. Lett. 99, 203101 (2011) Substrate nitridation induced modulations in transport properties of wurtzite GaN/p-Si (100) heterojunctions grown by molecular beam epitaxy J. Appl. Phys. 110, 093718 (2011) Characteristics of a-GaN films and a-AlGaN/GaN heterojunctions prepared on r-sapphire by two-stage growth process

A comparison of the water vapor oxidation characteristics of AlAs, Al 0.98 Ga 0.02 As, and an Al x Ga 1Ϫx As digital alloy was performed. The Al x Ga 1Ϫx As digital alloy consists of periods of 49 monolayers of AlAs and 1 monolayer of GaAs and has an equivalent composition of xϭ0.98. Oxidation rates and the structural integrity of the three layers were compared. When oxidized in water vapor, the Al x Ga 1Ϫx As digital alloy and the AlAs have similar oxidation rates, both of which are twice as fast as the Al 0.98 Ga 0.02 As layer. Post-oxidation annealing of these samples at 450°C showed severe delamination at the oxide/GaAs interface in the AlAs sample while the Al x Ga 1Ϫx As digital alloy sample was not damaged.

Nonselective and smooth etching of GaN/AlGaN heterostructures by Cl 2 / Ar / BCl 3 inductively coupled plasmas J.Selective etching of GaN over AlN using an inductively coupled plasma and an O 2 / Cl 2 /Ar chemistry J.A technique to etch GaP by reactive ion etching was developed and the effects of different etching parameters were studied. Also, selective etching of GaP over AlGaP was examined and demonstrated. Etching is achieved by using SiCl 4 , which will react with GaP to form volatile compounds. Selective etching is accomplished when SiF 4 is used in addition to SiCl 4 . The addition of the fluorine-based gas will result in a nonvolatile etch-inhibiting layer, AlF 3 , when aluminum is present on the sample surface. By adjusting etching parameters, a selectivity as high as 126 is demonstrated. The presence of the AlF 3 etch-inhibiting layer is verified by Auger electron spectroscopy, and the removal of this layer by buffered oxide etch is demonstrated. In addition, a direct comparison of etch rates for GaP and GaAs was made, and etch rates were found to be similar.

Articles you may be interested inStructural, morphological, and defect properties of metamorphic In0.7Ga0.3As/GaAs0.35Sb0.65 p-type tunnel field effect transistor structure grown by molecular beam epitaxy J. Vac. Sci. Technol. B 31, 041203 (2013); 10.1116/1.4812793Role of InAs and GaAs terminated heterointerfaces at source/channel on the mixed As-Sb staggered gap tunnel field effect transistor structures grown by molecular beam epitaxy J. Appl. Phys. 112, 024306 (2012); 10.1063/1.4737462In-plane self-arrangement of high-density InAs quantum dots on GaAsSb ∕ GaAs ( 001 ) by molecular beam epitaxy Molecular beam epitaxial growth of InAs/AlGaAsSb deep quantum well structures on GaAs substratesThe growth parameters of In 0.25 Ga 0.75 As grown on GaAs by molecular beam epitaxy were investigated. Low substrate temperatures coupled with lower growth rates and low arsenic overpressures were explored and the corresponding threading dislocation densities were determined using transmission electron microscopy. Threading dislocation densities in layers much thicker than the critical thickness were found to be as low as 1ϫ10 7 cm Ϫ2 using optimal growth conditions. In addition, the critical thickness of the ternary alloy was estimated. The evolution of the misfit dislocations and threading dislocations was also examined as a function of epilayer thickness.

Electrical characteristics of cadmium doped InAs grown by metalorganic vapor phase epitaxy J. Appl. Phys. 111, 023707 (2012) Effect of built-in electric field on the temperature dependence of transition energy for InP/GaAs type-II superlattices J. Appl. Phys. 110, 123523 (2011) Electron tunneling through atomically flat and ultrathin hexagonal boron nitride Appl. Phys. Lett. 99, 243114 (2011) Microwave power generation by magnetic superlattices Appl. Phys. Lett. 99, 242107 (2011) Doping profile of InP nanowires directly imaged by photoemission electron microscopy Appl. Phys. Lett. 99, 233113 (2011) Additional information on J. Appl. Phys.Polycrystalline ͑Ga,As͒ grown by molecular-beam epitaxy ͑MBE͒ is compared to polycrystalline ͑Ga,As͒ formed by annealing amorphous ͑Ga,As͒ also grown by MBE. Both amorphous and polycrystalline materials were grown at 100°C and crystallinity is controlled by the As overpressure. As the amorphous material was annealed at varying temperatures from 300 to 500°C several properties of the material changed such as levels of excess As in the material, grain structure of annealed material, strength and adhesion of crystallized layer, and conductivity of the material. After annealing at temperatures around 400°C, the material is specular, polycrystalline, has good adhesion, and is very conductive. Resistivity values of less than 2 m⍀ cm and acceptor concentrations near 5ϫ10 20 cm Ϫ3 were detected according to Hall/van der Pauw measurements. Conduction is believed to be due to the large amount of excess As in the material forming an As conduction path when the material is annealed. Material grown in a polycrystalline form by MBE differs in both grain structure and conductivity from material crystallized from an amorphous form.