Current-induced domain wall motion: Comparison of STT and SHE

Chureemart, J.; Sampan-a-pai, S.; Boonchui, S.; Chantrell, R.W.; Chureemart, P.

doi:10.1016/j.jmmm.2021.167838

Cited by 5 publications

(2 citation statements)

References 37 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…9(b) (red curve). As SOT devices are able to operate at lower current density [24], [25], we reduce the magnitude of the applied J to 10 × 10 10 A/m 2 . This charge current passes through the HM, which generates a vertical spin current that exerts SOT on the local magnetization in BL.…”

Section: Resultsmentioning

confidence: 99%

Self-Reset Schemes for Magnetic Domain Wall-Based Neuron

Das

Fong

2022

IEEE J. Explor. Solid-State Comput. Devices Circuits

View full text Add to dashboard Cite

Spintronic artificial spiking neurons are promising due to their ability to closely mimic the leaky integrate-and-fire (LIF) dynamics of the biological LIF spiking neuron. However, the neuron needs to be reset after firing. Few of the spintronic neurons that have been proposed in the literature discuss the reset process in detail. In this article, we discuss the various schemes to achieve this reset in a magnetic domain wall (DW)-based spintronic neuron in which the position of the DW represents the membrane potential. In all the spintronic neurons studied, the neuron enters a refractory period and is reset when the DW reaches a particular position. We show that the self-reset operation in the neuron devices consumes energy that can vary from several pJ to a few fJ, which highlights the importance of the reset strategy in improving the energy efficiency of spintronic artificial spiking neurons.

show abstract

Section: Resultsmentioning

confidence: 99%

Self-Reset Schemes for Magnetic Domain Wall-Based Neuron

Das

Fong

2022

IEEE J. Explor. Solid-State Comput. Devices Circuits

View full text Add to dashboard Cite

show abstract

“…Microscopically, the motion is related to an interaction between the magnetic moments of the layer and the current which applies a specific torque moment on them. The current could flow directly through the ferromagnetic track generating the so-called spin-transfer torque (STT) [3], or through the heavy metal giving rise to the spin-orbit torque (SOT) [4] in response to the spin currents generated. The synchronization and stabilization of the magnetic domains is fundamental for the correct functionality of the memory.…”

mentioning

confidence: 99%

Simulation and Modeling of Racetrack Memories With VCMA Synchronization

Diona¹,

Gnoli

Riente

2022

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

The control of the motion of magnetic domains is of crucial interest for the development of several spintronic applications, such as high-density racetrack memories and domain wall logic. In these devices, domain wall manipulation can be achieved via pulsed currents or applying external fields. However, real-world applications require accurate signal synchronization systems, keeping limited the power budget. Up to now, geometrical restrictions in the magnetic wire, known as notches, were used to confine domain walls at the expense of high resolution of the fabrication process. The solution based on the Voltage-Controlled Magnetic Anisotropy (VCMA) effect appears more promising-it is successful for controlling the skyrmion motion-avoids the need for strong depinning currents, simplifies the fabrication process, and gives more freedom in the control logic. The anisotropy variation induced by the VCMA can create barriers or wells that can be used to limit the movement of domain walls and obtain an effective synchronization. In this article, we propose a system-level evaluation of the effectiveness of the proposed VCMA synchronization method. Starting from a two-coordinates model, the motion of domain walls, the performance, and the efficiency of the approach are evaluated. We modeled the delay using SPICE. The VCMA showed clear advantages in the realization of the confinement structure at the system level with respect to the notch solution.

show abstract

Growth of ultrathin Mn4N epitaxial films on SrTiO3(001) and their thickness-dependent magnetic structures

Yasuda,

Amemiya,

Suemasu

2023

Applied Physics Letters

View full text Add to dashboard Cite

Mn4N thin films meet the requirements for efficient current-driven magnetic domain wall motion, such as perpendicular magnetic anisotropy and small magnetization. To demonstrate efficient field-free spin–orbit torque (SOT)-driven domain wall motion, the thickness of the Mn4N layer must be reduced. In this study, we focus on the fabrication of Mn4N ultrathin films on SrTiO3(001) substrates and demonstrate the epitaxial growth of Mn4N films as thin as around 4 nm. Surprisingly, the sign of the anomalous Hall resistivity of Mn4N reverses when the thickness of Mn4N decreases from approximately 8 to 4 nm. X-ray magnetic circular dichroism measurements suggest that the magnetic structure of Mn4N with a thickness of around 4 nm is different from that of conventional ferrimagnetic Mn4N films. The results obtained in this study are of great importance when considering the use of SOT and the interfacial Dzyaloshinskii–Moriya interaction in Mn4N ultrathin films.

show abstract

Current-induced domain wall motion: Comparison of STT and SHE

Cited by 5 publications

References 37 publications

Self-Reset Schemes for Magnetic Domain Wall-Based Neuron

Self-Reset Schemes for Magnetic Domain Wall-Based Neuron

Simulation and Modeling of Racetrack Memories With VCMA Synchronization

Growth of ultrathin Mn4N epitaxial films on SrTiO3(001) and their thickness-dependent magnetic structures

Contact Info

Product

Resources

About