Current-Induced Magnetization Switching of Exchange-Biased 
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 Heterostructures Characterized by Spin-Orbit Torque

Grochot, Krzysztof; Karwacki, Łukasz; Łazarski, Stanisław; Skowroński, Witold; Kanak, J.; Powroźnik, W.; Kuświk, Piotr; Kowacz, Mateusz; Stobiecki, F.; Stobiecki, T.

doi:10.1103/physrevapplied.15.014017

Cited by 18 publications

(16 citation statements)

References 68 publications

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“…This layer also supports exchange bias (EB) coupling at the Co/NiO interface that enables ﬁeld‐free magnetization switching of the Co layer by spin−orbit torque (SOT). [ 24 ] Note that oxidation is an important method to tune SOTs, [ 25,26 ] which was already demonstrated in heavy metal/Co/oxide systems. Recently, it was shown that oxidation of the Ni layer is responsible for spin textures with left‐handed chirality through the Dzyaloshinskii−Moriya interaction.…”

Section: Introductionmentioning

confidence: 99%

Origin of Perpendicular Magnetic Anisotropy Enhancement in Co/Ni Bilayer Due to Plasma Oxidation

Anastaziak

Głowiński

Urbaniak

et al. 2021

Physica Rapid Research Ltrs

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In spintronics and magnonics, materials that offer tunable perpendicular magnetic anisotropy (PMA) along with low Gilbert damping and high spin polarization are particularly important. Therefore, a lot of studies are performed on Co/Ni films, that aim at satisfying all these requirements. Moreover, the Dzyaloshinskii−Moriya interaction is induced in them by surrounding the magnetic layers with heavy metal or oxide layers. For this reason, the study of the oxidation of Co/Ni is of particular interest. Therefore, the magnetic properties of Co/Ni bilayers after plasma oxidation (PO) are investigated. It is shown that the magnetic anisotropy of these bilayers can be tuned, not only by the thicknesses of Co and Ni layers, but also by oxidation time varied in the range between 15 and 220 s. After PO, the effective thickness of ferromagnetic Ni is reduced, but it does not oxidize more than ≈2 nm, even for longer oxidation. However, the contribution to PMA increases for the entire range of oxidation times. This indicates that the thickness reduction of the Ni layer is not the only source of PMA enhancement. This additional contribution is attributed to the exchange bias coupling between the ferromagnetic (Co/Ni) and the antiferromagnetic NiO layers.

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Section: Introductionmentioning

confidence: 99%

Origin of Perpendicular Magnetic Anisotropy Enhancement in Co/Ni Bilayer Due to Plasma Oxidation

Anastaziak

Głowiński

Urbaniak

et al. 2021

Physica Rapid Research Ltrs

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“…Next, we discuss an example of SOT-induced magnetisation switching in the HM/FM bilayer. The experimental data were obtained in the multilayer system: Pt(4 nm)/Co(1 nm)/MgO (A1) from the work of Grochot et al 50 . In this case, we reproduce the theoretical switching behaviour of the system using the field-like and damping-like SOT, and magnetic parameters obtained from the experiment.…”

Section: Cimsmentioning

confidence: 99%

cmtj: Simulation package for analysis of multilayer spintronic devices

et al. 2023

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We present cmtj—a simulation package for large-scale macrospin analysis of multilayer spintronics devices. Apart from conventional simulations, such as magnetoresistance and magnetisation hysteresis loops, cmtj implements a mathematical model of dynamic experimental techniques commonly used for spintronics devices characterisation, for instance: spin diode ferromagnetic resonance, pulse-induced microwave magnetometry, or harmonic Hall voltage measurements. We find that macrospin simulations offer a satisfactory level of agreement, demonstrated by a variety of examples. As a unified simulation package, cmtj aims to accelerate wide-range parameter search in the process of optimising spintronics devices.

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“…Nevertheless, the use of metallic spin sink layers is generally discouraged due to the potential increase in energy consumption resulting from current shunting. Recently, antiferromagnetic insulators have gained attention for their capabilities in high-efficiency, electron-free spin current transmission. − Within this context, the insulating NiO film, with a high bulk Néel temperature of over 500 K, emerges as a notable candidate in spintronics. ,− Magnon-mediated magnetization switching was achieved with remarkable efficiency in the all-oxide heterostructure of SrRuO 3 /NiO/SrIrO 3 . Specifically, by inserting an insulating NiO layer within an in-plane magnetized Pt/NiO/CoFeB structure, the SOT efficiency of Pt can be significantly enhanced, potentially reaching the upper limit of the spin Hall angle.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Spin–Orbit Torque Efficiency by the Insertion of a Thin NiO Underlayer in Pt/Co/Ta Films

Zhang,

Jiang,

et al. 2024

ACS Appl. Electron. Mater.

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In this study, significant modulations of perpendicular magnetic anisotropy, spin–orbit torque (SOT) efficiency (ξSH), and magnetic damping have been achieved in Pt/Co/Ta films after inserting an insulating NiO underlayer. As the NiO thickness (t NiO) varies from 0 to 2 nm, ξSH exhibits a nonmonotonic variation trend, initially increasing and then decreasing after reaching a maximum value at t NiO = 1 nm. The maximum SOT efficiency is as high as 0.60, nearly twice as large as that in the sample without NiO. Based on the NiO thickness dependencies of effective perpendicular anisotropy field and magnetic damping factor, we can conclude that the complex variation in ξSH is attributable to the combined effects of modified interfacial orbital hybridization and spin absorption by the NiO layer. Significantly, the latter is identified as the primary enhancement mechanism at t NiO < 1 nm, as it prevents spins with adverse polarization from reflecting back to the magnetic layer. Our findings demonstrate an alternative approach toward high SOT efficiency by engineering heterostructures with a magnetic insulator underlayer, which may play a powerful role in developing advanced energy-efficient spintronic devices.

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Current-Induced Magnetization Switching of Exchange-Biased NiO Heterostructures Characterized by Spin-Orbit Torque

Cited by 18 publications

References 68 publications

Origin of Perpendicular Magnetic Anisotropy Enhancement in Co/Ni Bilayer Due to Plasma Oxidation

Origin of Perpendicular Magnetic Anisotropy Enhancement in Co/Ni Bilayer Due to Plasma Oxidation

cmtj: Simulation package for analysis of multilayer spintronic devices

Enhanced Spin–Orbit Torque Efficiency by the Insertion of a Thin NiO Underlayer in Pt/Co/Ta Films

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