Current Model of Fully Depleted Nanoscale Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect Transistors with Doped Channel in All Operation Regions

Abstract

The diffusion current of fully depleted (FD) nanoscale surrounding-gate (SG) metal-oxide-semiconductor field effect transistors (MOSFETs) with a doped channel was physically modeled with a simple closed form based on the surface potential. The potential distribution [È x ðzÞ] of doped SG MOSFETs was derived using Young's simple approximation from a two-dimensional (2D) Poisson's equation. In the diffusion current model, to consider the dependence on gate bias (V GS ) and drain bias (V DS ), parameters (D G and D D ) were introduced. In the saturation region, the drift current modeling of doped FD SG MOSFETs was easily performed from the derived current model in the linear region. The current of the devices in the transition region was also modeled with the simple closed form using the diffusion and drift current model. Our simple compact model accurately predicted the current behaviors of the devices with a channel length up to 20 nm and shown good agreement with three-dimensional (3D) simulation.

Current–Voltage Model of Bulk Fin Field-Effect Transistors with a Half-Circle Corner

“…The current behaviors of DG and SG MOSFETs with a doped channel have been already modeled with the simple closed-form in all operational regions. 21,22) The diffusion current models of DG and SG MOSFETs with a doped channel are given by 21,22)…”

“…( 1) and (3), D G and D D are parameters for considering the V GS dependence and the V DS dependence, respectively. 21,22) The drift current of DG MOSFETs with a doped channel is given by 21)…”

“…If we change W in Eqs. ( 5) and (6) to R, the drift current models become the models 22) for SG MOSFETs. In Eq.…”

“…4,[18][19][20] In this work, the current behaviors of fully depleted (FD) doped bulk FinFETs with the top-channel of a half-circle shape are modeled parametrically in all operational regions. The current modeling of the bulk FinFETs is based on the current models 21,22) of DG and SG MOSFETs, and is performed with V th0,t (V th model of top-channel at a low drain bias) and V th0,s (V th model of side-channels at a low drain bias) taking into account of a interference between them due to the charge-sharing induced by the field penetration effect. Our current model consists of three parts: diffusion, drift, and transition.…”

Analytical Threshold Model for Nanoscale Cylindrical Surrounding-Gate Metal–Oxide–Semiconductor Field Effect Transistor with High-κ Gate Dielectric and Tri-Material Gate Stack

“…Among them, cylindrical surrounding-gate (CSG) MOSFET is considered one of the most promising candidates owing to its excellent control of the channel. [2][3][4][5][6][7][8] However, even in CSG MOSFET, SCEs and HCEs cannot be neglected for channel lengths below 100 nm. 9) To enhance the immunity against SCEs, a tri-material gate (TMG) MOSFET has been proposed, [10][11][12] taking three different metal gates with different work functions as gate electrodes.…”