Current Noise and Efficiency Droop of Light-Emitting Diodes in Defect-Assisted Carrier Tunneling from an InGaN/GaN Quantum Well

Bochkareva, N. I.; Ivanov, Andrew; Klochkov, A. V.; Shreter, Yu. G.

doi:10.1134/s1063782619010032

Cited by 9 publications

(4 citation statements)

References 23 publications

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“…Recently, several papers on noise in p-InAsSbP/n-InAs PD at room and cryogenic temperatures have been published (see e.g. [4] and references herein).LEDs could be potentially quite noisy [5] and could essentially contribute to an overall LED-PD system noise.However, to the best of our knowledge there have been no attempts to measure the noise characteristics in mid-IR devices as InAsSbP/InAs LEDs and InAsSbP/InAs LED-PD pairs.…”

Section: Introductionmentioning

confidence: 99%

Low frequency noise in p-InAsSbP/n-InAs infrared photodiodes

Dyakonova¹,

Karandashev²,

Levinshteǐn³

et al. 2018

Semicond. Sci. Technol.

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We report the first experimental study of low-frequency noise in p-InAsSbP/n-InAs infrared photodiodes. For forward bias, experiments have been carried out at 300 and 77 K, in the photovoltaic regime the measurements have been done at 300 K. At room temperature the current noise spectral density, S I , exhibits the ∼1/f frequency dependence. For low currents, II 0 ∼4×10 −5 A, S I is proportional to I 2 , at higher currents this dependence changes to S I ∼I. At 77 K the noise spectral density is significantly higher than at 300 K, and Lorentzian contributions to noise are observed. The current dependences of spectral noise density can be approximately described as S I ∼I 1.5 and show particularities suggesting the contribution of defects.

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Section: Introductionmentioning

confidence: 99%

Low frequency noise in p-InAsSbP/n-InAs infrared photodiodes

Dyakonova¹,

Karandashev²,

Levinshteǐn³

et al. 2018

Semicond. Sci. Technol.

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“…A similar evolution of the S I (I) behavior was reported for other heterojunction devices. [57,58] For practical applications, it is important to compare the noise level in one electronic material and device type with that one in other electronic materials and devices. The noise level can be the overall indicator of the material quality and the maturity of the UWBG device technology.…”

Section: Resultsmentioning

confidence: 99%

Temperature Dependence of Low‐Frequency Noise Characteristics of NiO_x/β‐Ga₂O₃ p–n Heterojunction Diodes

Ghosh,

Mudiyanselage,

Kargar

et al. 2023

Adv Elect Materials

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Temperature dependence of the low‐frequency electronic noise in NiOx/β‐Ga2O3 p–n heterojunction diodes is reported. The noise spectral density is of the 1/f‐type near room temperature but shows signatures of Lorentzian components at elevated temperatures and at higher current levels (f is the frequency). It is observed that there is an intriguing non‐monotonic dependence of the noise on temperature near T = 380 K. The Raman spectroscopy of the device structure suggests material changes, which results in reduced noise above this temperature. The normalized noise spectral density in such diodes is determined to be on the order of 10−14 cm2 Hz−1 (f = 10 Hz) at 0.1 A cm−2 current density. In terms of the noise level, NiOx/β‐Ga2O3 p–n diodes perform excellently for new technology and occupy an intermediate position among devices of various designs implemented with different ultra‐wide‐bandgap semiconductors. The obtained results are important for understanding the electronic properties of NiOx/β‐Ga2O3 heterojunctions and contribute to the development of noise spectroscopy as the quality assessment tool for new electronic materials and device technologies.

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“…A model of the mechanism of low-frequency noise generation based on fluctuation of center occupation under horizontal energy transitions [8], despite the physical difference, is described using the same mathematical representations (Lorentzian noise spectrum) as generation-recombination noise [24], related to vertical energy transitions between centers and unoccupied bands. Fluctuations are determined by a random distribution of centers in depth of the barriers' SCR and an exponential dependence of hopping frequency on distance between centers, determined by density of states at the tunneling level [25,26], which causes fluctuations of center filling and current noise.…”

Section: Discussionmentioning

confidence: 99%

“…Noise power was determined in four bands with the center frequencies of 20, 70, 270 and 1000 Hz. For more detail about determination of density of low-frequency current noise and its spectral dependence by means of a semiautomatic unit see paper [8]. Current, photo-induced current and density of low-frequency current noise were measured at room temperature (T = 295 K) and nitrogen temperature (T = 77.4 K).…”

Section: Methodsmentioning

confidence: 99%

Influence of low temperature on the electrophysical and noise characteristics of UV LEDs based on InGaN/GaN quantum well structures

Ivanov

Klochkov

2022

Semiconductors

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Comparison of optical power, external quantum efficiency in InGaN/GaN UV LEDs at room temperature and liquid nitrogen temperature is carried out. The spectral densities of the current low-frequency noise have been investigated. The mechanisms of carrier transport, the formation of low-frequency noise, and the dependences of the rates of radiative and nonradiative recombination at room and nitrogen temperatures are considered. Keywords: External quantum efficiency, low-frequency noise, carrier transport, defect tunneling.

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Current Noise and Efficiency Droop of Light-Emitting Diodes in Defect-Assisted Carrier Tunneling from an InGaN/GaN Quantum Well

Cited by 9 publications

References 23 publications

Low frequency noise in p-InAsSbP/n-InAs infrared photodiodes

Low frequency noise in p-InAsSbP/n-InAs infrared photodiodes

Temperature Dependence of Low‐Frequency Noise Characteristics of NiO_x/β‐Ga₂O₃ p–n Heterojunction Diodes

Influence of low temperature on the electrophysical and noise characteristics of UV LEDs based on InGaN/GaN quantum well structures

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Current Noise and Efficiency Droop of Light-Emitting Diodes in Defect-Assisted Carrier Tunneling from an InGaN/GaN Quantum Well

Cited by 9 publications

References 23 publications

Low frequency noise in p-InAsSbP/n-InAs infrared photodiodes

Low frequency noise in p-InAsSbP/n-InAs infrared photodiodes

Temperature Dependence of Low‐Frequency Noise Characteristics of NiOx/β‐Ga2O3 p–n Heterojunction Diodes

Influence of low temperature on the electrophysical and noise characteristics of UV LEDs based on InGaN/GaN quantum well structures

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Temperature Dependence of Low‐Frequency Noise Characteristics of NiO_x/β‐Ga₂O₃ p–n Heterojunction Diodes