Current problems in diamond: towards a quantitative understanding

Davies, Gordon

doi:10.1016/s0921-4526(99)00398-1

Cited by 107 publications

(82 citation statements)

References 51 publications

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“…This is in good agreement with recent reported experimental data by Davies [25]. The much larger oscillator strength of the V -relative to the other color centers in diamond and the role of the ground state spin in the relative values of the oscillator strengths are explained by the present model [26].…”

Section: Inherent CIsupporting

confidence: 93%

Generalized Hubbard model for many‐electron states of the diamond vacancies: A non‐CI approach

Saani¹,

Vesaghi

Esfarjani

et al. 2006

Physica Status Solidi (b)

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Many-electron calculations based on a generalized Hubbard Hamiltonian for electronic states of the diamond vacancies are reported. The model does not use the configuration interaction (CI) method and proper tetrahedral symmetry and spin properties of the defect are included in the Hamiltonian. Atomic orbital bases are introduced for the Hamiltonian calculation. Excited states of both neutral and negatively charged vacancies in diamond are calculated. The calculated values for the experimentally observed first dipole transition energies of the vacancies in diamond, GR1 and ND1 bands, are in good agreement with experiment. To obtain these results, we used a semi-empirical Hamiltonian parameter. The position of the low-lying T state was found to be 260 meV above the ground state, which is consistent with experimental expectations. In addition to the energy spectrum, the model gives all eigenfunctions of the vacancies, which have not been calculated before. This model has high potential for further applications in point defects of diamond and other semiconductors.

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Section: Inherent CIsupporting

confidence: 93%

Generalized Hubbard model for many‐electron states of the diamond vacancies: A non‐CI approach

Saani¹,

Vesaghi

Esfarjani

et al. 2006

Physica Status Solidi (b)

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“…Irradiated sample was annealed at 500 C for 1 h. Broad background is subtracted band, smooth increase in absorption from 2.6 eV towards higher energies and a relatively small peak due to the 3H centre. Using the calibration data of Davies [10], the concentration of neutral vacancies in the 4 mm thick irradiated layer was estimated as 500 ppm.…”

Section: Resultsmentioning

confidence: 99%

Optical Study of Some Interstitial-Related Centres in CVD Diamond

Iakoubovskii

Adriaenssens

2000

phys. stat. sol. (a)

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Luminescence and optical transmittance measurements were performed on irradiated natural diamond crystals and on synthetic films. Their results show that variations in luminescence with annealing can be due to changes in the non-radiative processes rather than in the concentration of the investigated centre. In particular, emission from the interstitial-related 3H centre increases when the neutral vacancy (GR1) anneals out, showing that the GR1 can effectively quench 3H emission. The 3H centre was found to be stable up to 900 C in irradiated CVD and natural diamond. As-grown CVD films also show the presence of this centre as well as of a defect, which is assigned to the distorted TR12 centre. The latter defect, labeled as TR12 0 , shows remarkable temperature stability, being present in films grown at 2100 C.

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“…Steeds et al [3,4] argued that the 3H luminescence line arises from the single, isolated h100i split selfinterstitial atoms in the diamond lattice. Davies [5] connected self-interstitial defects with R2 centres, observed in electron spin resonance spectra, and the two optical absorption centres at 1.685 and 1.859 eV, which correlate in strength with the R2 one. He attributed the 3H centre to some form of self-interstitial complex.…”

Section: Introductionmentioning

confidence: 91%

UV and Anti-Stokes Photoluminescence of 3H Centre in Electron-Irradiated CVD Diamond

Власов¹,

Ralchenko²,

Konov³

2001

phys. stat. sol. (a)

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Photoluminescence (PL) of the 3H centre was studied at different excitation energies for 8 MeV electron-irradiated CVD diamond at temperatures 90-290 K. A frequency up-conversion effect was observed at 2.41 eV excitation of the 3H centre luminescence (2.462 eV). A deviation of the temperature dependence of the anti-Stokes PL intensity from the Boltzmann distribution was noted at 90-130 K. A transformation of the 2.462 eV (503.5 nm) line into the 2.443 eV (507.6 nm) line in the PL spectra was observed for the first few minutes of laser pumping at an excitation photon energy of 3.82 eV.

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Current problems in diamond: towards a quantitative understanding

Cited by 107 publications

References 51 publications

Generalized Hubbard model for many‐electron states of the diamond vacancies: A non‐CI approach

Generalized Hubbard model for many‐electron states of the diamond vacancies: A non‐CI approach

Optical Study of Some Interstitial-Related Centres in CVD Diamond

UV and Anti-Stokes Photoluminescence of 3H Centre in Electron-Irradiated CVD Diamond

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