Current state of photoconductive semiconductor switch engineering

Majda-Zdancewicz, Ewelina; Suproniuk, Marek; Pawłowski, M.; Wierzbowski, M.

doi:10.1016/j.opelre.2018.02.003

Cited by 45 publications

(24 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Semiconductor materials with a wider energy gap than GaAs of 1.424 eV should theoretically achieve better performance. They are, among others, SI GaP, SI 6H-SiC, SI 4H-SiC and SI GaN with a band gap width of 2.26, 3.0, 3.23 and 3.39 eV respectively at 300 K [6,8]. Research confirms better properties of PCSS made of SI 6H-SiC, SI 4H-SiC and SI GaN compared to switches made of SI GaAs [8,9].…”

Section: Introductionmentioning

confidence: 66%

“…A typical PCSS is made of semiconductor material with very high resistivity and a thickness of 0.5 to 1 mm, on the surface of which electrodes are placed for connection to the electrical system. An overview of the basic PCSS constructions was previously described in [6]. On its basis, the solution used in the research was selected, shown in figure 1.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Influence of photon energy on conductivity of photoconductive semiconductor switches fabricated from semi-insulating GaP

Piwowarski¹,

Suproniuk²,

Kamiński³

et al. 2020

Radioelectronic Systems Conference 2019

View full text Add to dashboard Cite

The article presents the experimental results of research works aimed at manufacturing photoconductive semiconductor switches (PCSSs) on semi-insulating (SI) gallium phosphide (GaP) wafers. The PCSS is an electrical switch, triggered into the conduction state by means of an optical pulse with specific photon energy. The switches presented in the paper are developed for the applications in power systems and high-pulse voltage generators. The paper presents time courses of the photocurrent being a response to the excitation of semiconductor material with an optical pulse that generates excess charge carriers. The effects of laser beam photon energy on the height and time constant of photocurrent pulses were determined. The results of measurements of photocurrent in the conduction state for various values of electric field strength are presented. The research methodology was discussed and the measuring system used was described. Possible directions of further research were also presented. The research was carried out thanks to the cooperation of scientific teams from the

show abstract

Section: Introductionmentioning

confidence: 66%

Section: Introductionmentioning

confidence: 99%

Influence of photon energy on conductivity of photoconductive semiconductor switches fabricated from semi-insulating GaP

Piwowarski¹,

Suproniuk²,

Kamiński³

et al. 2020

Radioelectronic Systems Conference 2019

View full text Add to dashboard Cite

show abstract

“…• a uniform distribution of single-phase consumers onto individual phases, • installing load balancing equipment, • thorough interleaving of the phase conductors in overhead supply lines. Other observed interferences were voltage dips, possibly resulting from switching processes, which can be minimized through the application of hybrid switches constructed on the base of photoconductive switches [8][9][10]. Unfortunately, in this case, a consumer is unable to individually remove or mitigate them, since they are primarily the outcome of earth faults present within the supply line.…”

Section: Methods For Eliminating Observed Interferencementioning

confidence: 99%

Work disruptions of electronics devices in hospital objects

Suproniuk¹,

Skibko²,

Stachno³

2020

Radioelectronic Systems Conference 2019

View full text Add to dashboard Cite

With the development of technology, there is an increase in the industry of sensitive devices which work is dependent on parameters of electricity from which they are supplied. This aspect is especially important for example in hospitals, where health and human life often depend on the correct work of electronics devices. The article presentson the selected practical exampleparameters describing the electricity supplying the hospital facility. In that hospital the incorrectly operation of the magnetic resonance has been observed. The analyzed facility is powered from the medium voltage network via its own 15/0,4 kV transformer station. Based on changes in recorded waveforms of physical quantities in time, it was noticed that the loads installed there significantly impact on the quality of the electricity which are supplied. One of the figures presents value of the waveform of the total harmonic distortion coefficient of the voltage, which is dependent on value of the load's current. Based on the recorded parameters describing the quality of electricity supplying the prospected hospital, possible technical solutions have been proposed. They can directly contribute to the elimination of interference, and thus guarantee the proper work of the equipment set there.

show abstract

“…A PCSS is made of a semiconductor material with a thickness of 0.5 mm to 1 mm, on the surface of which there are contacts enabling the connections of the switch to the electrical system. An overview of basic PCSS switch structure is presented in reference [3], and the solution used in the research is presented in Fig. 1.…”

Section: Introductionmentioning

confidence: 99%

“…These include GaP, 6H-SiC, 4H-SiC, and GaN whose bandgaps at 300 K are 2.26 eV, 3.0 eV, 3.23 eV, and 3.39 eV respectively. The critical electric field strength values for these materials are equal to 1.0 MV/cm, 3.0 MV/cm, 3.0 MV/cm, and 5.0 MV/cm [3]. The main advantage of using materials with a wider energy gap is the PCSS`s ability to block significantly higher voltages and conduct higher currents than in the case of switches made of SI GaAs.…”

Section: Introductionmentioning

confidence: 99%

Blocking Characteristics of Photoconductive Switches Based on Semi-Insulating GaP and GaN

Suproniuk¹,

Piwowarski²,

Perka³

et al. 2019

ELEKTRON ELEKTROTECH

View full text Add to dashboard Cite

This article presents results of research work aimed at manufacturing photoconductive semiconductor switches (PCSSs) based on semi-insulating (SI) gallium phosphide (GaP) and gallium nitride (GaN). Currently, the work is in progress to determine the optimal values of PCSS parameters. In this article, the parameters of the selected semiconductor materials used for making PCSSs, the device operation principle, and possible areas of use are presented. The paper demonstrates the construction of test PCSSs based on SI GaP and SI GaN and results of blocking characteristics measurements without the illumination, as well as with illumination with a small photon flux. Further research directions are presented also.

show abstract

Current state of photoconductive semiconductor switch engineering

Cited by 45 publications

References 17 publications

Influence of photon energy on conductivity of photoconductive semiconductor switches fabricated from semi-insulating GaP

Influence of photon energy on conductivity of photoconductive semiconductor switches fabricated from semi-insulating GaP

Work disruptions of electronics devices in hospital objects

Blocking Characteristics of Photoconductive Switches Based on Semi-Insulating GaP and GaN

Contact Info

Product

Resources

About